Skip to content
6CCVD Research

Progress in the Copper-Based Diamond Composites for Thermal Conductivity Applications

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2023-06-01
JournalCrystals
AuthorsKang Chen, Xuesong Leng, Rui Zhao, Yiyao Kang, Hongsheng Chen
InstitutionsHarbin Institute of Technology
Citations27
AnalysisFull AI Review Included

Technical Documentation & Analysis: Copper-Based Diamond Composites for Thermal Management

Section titled “Technical Documentation & Analysis: Copper-Based Diamond Composites for Thermal Management”

This documentation analyzes the research review “Progress in the Copper-Based Diamond Composites for Thermal Conductivity Applications” to highlight critical material requirements and demonstrate how 6CCVD’s advanced MPCVD diamond products and customization services provide essential solutions for replicating and advancing this research.

Executive Summary

Section titled “Executive Summary”

Copper-based diamond composites are critical for next-generation thermal management in high-power electronics, military, and aerospace applications, requiring thermal conductivity (TC) exceeding 900 W/(m·K).

  • Core Challenge: The natural non-wetting behavior between copper and diamond creates high interfacial thermal resistance (ITR), limiting composite TC.
  • Solution Strategy: ITR is mitigated by forming stable carbide layers (e.g., TiC, WC, Cr7C3) at the interface, achieved through diamond surface metallization or matrix alloying (using elements like Ti, W, Cr, Zr, and B).
  • Key Material Parameters: Optimal performance requires high-purity diamond particles with intrinsic TC of 1200-2500 W/(m·K), a particle size range of 100 ”m to 300 ”m, and a diamond volume fraction of 50-60 vol%.
  • Achieved Performance: Recent studies utilizing optimized interface engineering and pressure infiltration techniques have successfully achieved composite thermal conductivities up to 930 W/(m·K).
  • 6CCVD Value Proposition: 6CCVD provides the necessary high-purity Single Crystal Diamond (SCD) and Polycrystalline Diamond (PCD) materials, coupled with in-house metalization capabilities (Ti, W, Cu) to streamline interface modification research and accelerate the development of high-performance thermal packaging solutions.

Technical Specifications

Section titled “Technical Specifications”

The following hard data points were extracted from the analysis of copper-based diamond composite research:

ParameterValueUnitContext
Intrinsic Diamond TC1200 to 2500W/(m·K)High-quality diamond reinforcement material
Copper Matrix TC398 to 400W/(m·K)Pure copper matrix
Target Composite TC> 900W/(m·K)Required for advanced electronic packaging
Highest Reported Composite TC (Zr Alloy)930W/(m·K)Achieved via pressure infiltration
Highest Reported Composite TC (B Alloy)913W/(m·K)Achieved via pneumatic infiltration
Recommended Diamond Volume Fraction50 to 60vol%Optimized range for cost and density
Optimal Diamond Particle Size100 to 300”mRange used in recent high-TC studies
Interfacial Thermal Resistance (ITR) Example2.9 x 10-7m2·K/WExperimentally determined value
Typical SPS Sintering Temperature800 to 970°CUsed for rapid consolidation
Carbide Layer Thickness (Example)5 to 20nmOptimized Cr carbide layer thickness

Key Methodologies

Section titled “Key Methodologies”

Research progress focuses heavily on two primary strategies for enhancing wettability and several advanced consolidation techniques:

  1. Interface Modification Techniques:

    • Diamond Surface Metallization: Coating diamond particles with carbide-forming elements (Ti, W, Cr, Mo, B) using:
      • Electroplating (EP)
      • Magnetron Sputtering (MS)
      • Salt Bath Coating (SBC)
      • Vacuum Micro-Evaporation Plating (VMEP)
    • Matrix Alloying: Introducing carbide-forming elements (Ti, W, Cr, Zr, B) into the copper matrix via:
      • Gas Atomization (for powder preparation)
      • Alloy Melting (for liquid phase infiltration)

  2. Consolidation and Forming Techniques:

    • Pressure Infiltration (PI): Molten copper (or alloy) is forced into a densely packed diamond preform under pressure, achieving high density and high TC (e.g., 930 W/(m·K)).
    • Spark Plasma Sintering (SPS): Rapid sintering of mixed powders using pulsed current and pressure, suitable for lower temperature processing (800-970 °C).
    • Vacuum Hot-Press Sintering (VHPS): Sintering powders in a vacuum environment, known for uniform heating and reduced thermal stress.
    • High-Temperature and High-Pressure Sintering (HTHP): Used to achieve high densities, particularly when diamond volume fraction exceeds 70 vol%.

6CCVD Solutions & Capabilities

Section titled “6CCVD Solutions & Capabilities”

6CCVD is uniquely positioned to supply the high-purity diamond materials and specialized surface treatments required to advance research in copper-based diamond composites for thermal management. Our MPCVD technology ensures the highest intrinsic thermal conductivity, which is the foundational requirement for achieving composite TC > 900 W/(m·K).

Research Requirement6CCVD Applicable Materials & ServicesTechnical Advantage for Client
High Intrinsic TC Diamond ReinforcementOptical Grade SCD and High-Purity PCD: Our MPCVD diamond offers intrinsic TC values (1200-2500 W/(m·K)) necessary to maximize composite performance. We provide SCD/PCD in thicknesses from 0.1 ”m up to 500 ”m.Ensures the highest quality starting material, directly addressing the need for maximum phonon transport efficiency.
Custom Dimensions for Preforms/MoldsCustom Plates and Wafers up to 125mm (PCD): We can supply large-area PCD wafers or thick SCD substrates (up to 10mm) tailored for subsequent crushing into optimal particle sizes (100-300 ”m) or for use as large-scale composite substrates.Supports large-scale experimental setups and pilot production runs, overcoming the size limitations noted with graphite molds in HTHP/SPS methods.
Interface Carbide Coating Elements (Ti, W)In-House Metalization Services (Ti, W, Cu): The paper identifies Ti and W as crucial carbide-forming elements. 6CCVD offers internal deposition of Ti and W layers, allowing researchers to acquire pre-metallized diamond substrates or particles.Streamlines the R&D process by providing uniform, high-quality carbide precursor coatings, eliminating the need for complex in-house MS or VMEP equipment.
Fundamental Interface StudiesUltra-Smooth SCD Substrates (Ra < 1nm): For detailed characterization of carbide layer formation and acoustic mismatch modeling (as discussed in Section 2.3), 6CCVD provides SCD polished to an atomic-level smoothness (Ra < 1nm).Enables precise, high-resolution analysis of the diamond/carbide/copper interface structure, critical for optimizing ITR.
Need for High-Strength CompositesBoron-Doped Diamond (BDD) Options: While the paper focuses on TC, it concludes that future work must address mechanical strength. BDD materials can be explored as a matrix or reinforcement phase for enhanced mechanical properties alongside thermal performance.Offers flexibility for researchers focusing on the dual challenge of achieving high TC and high mechanical strength for robust electronic packaging.

Engineering Support

Section titled “Engineering Support”

6CCVD’s in-house PhD team specializes in advanced MPCVD diamond growth and interface engineering. We offer comprehensive material consultation to assist researchers and engineers in selecting the optimal diamond type (SCD vs. PCD), doping level, and metalization scheme for high-TC electronic packaging and heat sink applications. We also manage global logistics, offering DDU (Delivered Duty Unpaid) as default and DDP (Delivered Duty Paid) options for seamless international delivery.

For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.

View Original Abstract

Copper-based diamond composites have been the focus of many investigations for higher thermal conductivity applications. However, the natural non-wetting behavior between diamond particles and copper matrix makes it difficult to fabricate copper-based diamond composites with high thermal conductivity. Thus, to promote wettability between copper and diamond particles, the copper/diamond interface must be modified by coating alloying elements on the diamond surface or by adding active alloying elements with carbon in the copper matrix. In this paper, we review the research progress on copper-based diamond composites, including theoretical models for calculating the thermal conductivity and the effect of process parameters on the thermal conductivity of copper-based diamond composites. The factors that affect interfacial thermal conductivity are emphatically analyzed in this review. Finally, the current problems of copper-based diamond composites and future research trends are recommended.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

References

Section titled “References”
  1. 2006 - Thermal interface materials-A review of the state of the art [Crossref]
  2. 2014 - Emerging challenges and materials for thermal management of electronics [Crossref]
  3. 1997 - The measurement of thermal properties of diamond [Crossref]
  4. 2017 - Mo2C coating on diamond: Different effects on thermal conductivity of diamond/Al and diamond/Cu composites [Crossref]
  5. 2011 - Thermal properties of diamond/SiC/Al composites with high volume fractions [Crossref]
  6. 2012 - Thermal conductivity and microstructure of Al/diamond composites with Ti-coated diamond particles consolidated by spark plasma sintering [Crossref]
  7. 2012 - Effect of copper content on the thermal conductivity and thermal expansion of Al-Cu/diamond composites [Crossref]
  8. 2011 - Effect of coating on the microstructure and thermal conductivities of diamond-Cu composites prepared by powder metallurgy [Crossref]
  9. 2018 - Numerical simulation of thermal conductivity of diamond/copper composites
  10. 2008 - Interfacial design of Cu-based composites prepared by powder metallurgy for heat sink applications [Crossref]

Reads Similar to This

Photoactivation of Color Centers Induced by CW Laser Irradiation in Ion-Implanted Diamond Reduced thermal boundary conductance in GaN-based electronic devices introduced by metal bonding layer Photovoltaics literature survey (No. 174)