Highly efficient charging and discharging of three-level quantum batteries through shortcuts to adiabaticity

At a Glance

Metadata	Details
Publication Date	2021-04-28
Journal	arXiv (Cornell University)
Authors	Fu-Quan Dou, Yuan‐Jin Wang, Jianan Sun
Institutions	Northwest Normal University
Citations	44
Analysis	Full AI Review Included

Technical Analysis and Documentation: Highly Efficient Quantum Batteries via cdSTIRAP

This document analyzes the research paper “Highly efficient charging and discharging of three-level quantum batteries through shortcuts to adiabaticity” and outlines how 6CCVD’s specialized MPCVD diamond materials and engineering services are essential for the experimental implementation of this high-performance quantum technology.

Executive Summary

The research details a significant advancement in quantum energy storage by implementing Shortcuts to Adiabaticity (STA) via counterdiabatic STIRAP (cdSTIRAP) in a three-level quantum battery system.

Core Achievement: Demonstrated a protocol (cdSTIRAP) that significantly accelerates the charging and discharging dynamics of a quantum battery compared to standard STIRAP.
Performance Metrics: Numerical simulations confirm that the maximum stored energy (ergotropy) is increased by 3 to 4 times, and the maximum charging power is enhanced by 4 to 5 times.
Methodology: The acceleration is achieved by applying an auxiliary control field (CD pulse) to compensate for nonadiabatic transitions, ensuring the system remains locked in the dark state during rapid evolution.
Robustness: The cdSTIRAP protocol shows superior stability, maintaining full charge capacity even when the peak pulse amplitude ($\Omega_{0}$) is varied.
Key Implementation Platform: The authors explicitly propose the use of the $S=1$ spin system of the negatively charged Nitrogen-Vacancy (N-V) center in diamond as a promising experimental platform.
6CCVD Value Proposition: 6CCVD provides the necessary high-purity, low-strain Single Crystal Diamond (SCD) substrates, along with custom metalization capabilities, critical for realizing the proposed N-V center quantum battery.

Technical Specifications

The following hard data points were extracted from the numerical simulations and theoretical analysis of the cdSTIRAP protocol:

Parameter	Value	Unit	Context
Energy Spectrum ($\epsilon_{1}$)	0	Arbitrary	Ground State (Discharged)
Energy Spectrum ($\epsilon_{2}$)	1	Arbitrary	First Excited State (Partially Charged)
Energy Spectrum ($\epsilon_{3}$)	1.95	Arbitrary	Second Excited State (Fully Charged)
Maximum Ergotropy (C_max) Increase	3 to 4	Times	cdSTIRAP vs. STIRAP performance
Maximum Charging Power (P_max) Increase	4 to 5	Times	cdSTIRAP vs. STIRAP performance
Standard Pulse Width (T)	1	Units T	Used for comparative simulation
Standard Peak Amplitude ($\Omega_{0}$)	1	Arbitrary	Used for comparative simulation
Optimized Pulse Delay ($\tau$)	0.7	Units T	Maximizes charging power in cdSTIRAP
CD Field Phase ($\phi$)	$\pi/2$	Radians	Required for counterdiabatic driving

Key Methodologies

The charging and discharging protocols rely on precise control of external fields driving transitions within the three-level system.

System Initialization: The quantum battery is modeled as a three-level system, with the ground state $|1\rangle$ (discharged) and the second excited state $|3\rangle$ (fully charged).
STIRAP Baseline: Standard Stimulated Raman Adiabatic Passage (STIRAP) is used, driven by two external fields: a P pulse (driving $|1\rangle \leftrightarrow |2\rangle$) and an S pulse (driving $|2\rangle \leftrightarrow |3\rangle$).
Counterdiabatic Implementation (cdSTIRAP): To achieve STA, an additional control field (CD pulse, $\Omega_{cd}$) is applied to the $|1\rangle \leftrightarrow |3\rangle$ transition. This auxiliary field compensates for nonadiabatic excitations, ensuring the system remains in the dark state during rapid evolution.
Pulse Shaping:
- The P and S driving fields are modeled using Gaussian pulses ($\Omega(t) \propto e^{-(t/\text{T})^{2}}$).
- The counterdiabatic field ($\Omega_{cd}$) is realized by modulating a hyperbolic secant function ($\Omega_{cd}(t) \propto \text{sech}(4\tau t/T^{2})$).
Experimental Proposal: The $S=1$ spin system of the N-V center in diamond is proposed, where microwave magnetic fields drive the $|0\rangle \leftrightarrow |\pm 1\rangle$ transitions, and a time-varying strain field controls the $|-1\rangle \leftrightarrow |+1\rangle$ transition to implement the cdSTIRAP.

6CCVD Solutions & Capabilities

The proposed experimental implementation using Nitrogen-Vacancy (N-V) centers in diamond requires specialized, high-coherence MPCVD diamond substrates. 6CCVD is uniquely positioned to supply the materials and engineering support necessary to realize this high-efficiency quantum battery.

Applicable Materials

To replicate or extend this research using N-V centers, researchers require the highest quality diamond material:

Optical Grade Single Crystal Diamond (SCD): Essential for N-V center research. 6CCVD provides ultra-low strain, high-purity SCD (Type IIa) substrates necessary to achieve the long coherence times ($T_{2}$) required for stable quantum battery operation.
Controlled Nitrogen Doping: We offer SCD growth with precisely controlled nitrogen incorporation during the MPCVD process, optimizing the density and uniformity of N-V centers for scalable quantum devices.

Customization Potential

The complexity of the cdSTIRAP protocol requires precise integration of microwave circuitry and strain fields, which necessitates custom substrate engineering.

Research Requirement	6CCVD Customization Capability	Impact on Experiment
Substrate Dimensions	Custom plates/wafers up to 125mm (PCD) or large SCD plates (up to 10x10mm)	Provides the necessary footprint for integrating complex microwave circuits and cryostat mounting.
Crystal Orientation	SCD available in standard [100] and specialized [111] orientations	Allows researchers to select the optimal crystal plane for N-V alignment and maximum coupling efficiency with external fields.
Microwave Circuitry	In-house Metalization Services: Au, Pt, Pd, Ti, W, Cu	Enables direct deposition of microwave striplines or coplanar waveguides onto the diamond surface for driving the required spin transitions.
Surface Quality	Advanced Polishing (Ra < 1nm for SCD)	Minimizes surface roughness and defects, crucial for reducing decoherence, especially for near-surface N-V centers used in sensing or quantum information.
Thickness Control	SCD thickness control from 0.1µm up to 500µm	Allows precise tuning of the diamond layer for optimal thermal management and integration into hybrid quantum systems.

Engineering Support

6CCVD’s in-house PhD team specializes in MPCVD growth parameters optimized for quantum applications. We can assist researchers with:

Material Selection: Guidance on choosing the optimal SCD grade, nitrogen concentration, and crystal orientation for specific N-V quantum battery projects.
Integration Design: Consultation on metalization stack design (e.g., Ti/Pt/Au adhesion layers) to ensure robust microwave delivery and thermal stability.
Rapid Prototyping: Utilizing our custom laser cutting and polishing services to quickly deliver unique geometries required for novel quantum device architectures.

For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.

View Original Abstract

Quantum batteries are energy storage devices that satisfy quantum mechanical principles. How to improve the battery’s performance such as stored energy and power is a crucial element in the quantum battery. Here, we investigate the charging and discharging dynamics of a three-level counterdiabatic stimulated Raman adiabatic passage quantum battery via shortcuts to adiabaticity, which can compensate for undesired transitions to realize a fast adiabatic evolution through the application of an additional control field to an initial Hamiltonian. The scheme can significantly speed up the charging and discharging processes of a three-level quantum battery and obtain more stored energy and higher power compared with the original stimulated Raman adiabatic passage. We explore the effect of both the amplitude and the delay time of driving fields on the performances of the quantum battery. Possible experimental implementation in superconducting circuit and nitrogen-vacancy center is also discussed.

Tech Support

Original Source

DOI: https://doi.org/10.1007/s11467-021-1130-5

References

2018 - Thermodynamics in the Quantum Regime: Fundamental Aspects and New Directions [Crossref]