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Calibration of diamond detectors for dosimetry in beam-loss monitoring

MetadataDetails
Publication Date2021-04-27
JournalNuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
AuthorsG. Bassi, L. Bosisio, P. Cristaudo, M. Dorigo, A. Gabrielli
InstitutionsUniversity of Trieste, Istituto Nazionale di Fisica Nucleare, Sezione di Trieste
Citations15
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Technical Documentation & Analysis: MPCVD Diamond for High-Energy Physics Dosimetry

Section titled “Technical Documentation & Analysis: MPCVD Diamond for High-Energy Physics Dosimetry”

This document analyzes the research paper “Calibration of diamond detectors for dosimetry in beam-loss monitoring” (arXiv:2102.03273v2) to highlight 6CCVD’s capabilities in supplying high-performance MPCVD diamond materials for extreme radiation environments.


The research successfully validates single-crystal CVD (sCVD) diamond sensors for high-stability dosimetry and beam-loss monitoring in the SuperKEKB collider, demonstrating performance critical for high-energy physics (HEP) applications.

  • Application: High-radiation dosimetry and beam-loss monitoring (BLM) requiring stability up to 10 Mrad integrated dose.
  • Material Performance: SCD sensors achieved near-unity Charge Collection Efficiency (CCE ~100%) at an optimal bias of |V| = 100 V.
  • Material Quality: Transient Current Technique (TCT) confirmed high material purity, yielding an average electron-hole pair ionization energy (Eeh) of ~13 eV.
  • Carrier Dynamics: Measured saturation drift velocities (Vsat) were 1.3 x 107 cm/s for holes and 0.9 x 107 cm/s for electrons.
  • Calibration Accuracy: Current-to-dose-rate calibration factors (k) were determined with a low total systematic uncertainty of 8%, validated across a wide dose range using beta, X-ray, and gamma sources.
  • 6CCVD Relevance: 6CCVD specializes in supplying the required high-purity SCD material, custom dimensions, and precise Ti/Pt/Au metalization stacks necessary to replicate and advance this detector technology.

The following hard data points were extracted from the characterization of the sCVD diamond detectors:

ParameterValueUnitContext
Detector Material TypesCVD DiamondN/ASingle Crystal Diamond
Detector Face Dimensions4.5 x 4.5mmÂČSensor size
Detector Thickness0.50mmSCD active layer
Electrode Area4.0 x 4.0mmÂČMetalized contact area
Metalization Stack (Ti/Pt/Au)100/120/250nmLayer thickness for non-blocking electrodes
Optimal Operating Bias100VVoltage for CCE close to 100%
Maximum Dark Current (at ±500 V)< 10pAPost-assembly quality control
Average Ionization Energy (Eeh)13.1eVMeasured via TCT (Optimized setup)
Hole Saturation Velocity (Vsat)1.3 x 107cm/sCharge carrier transport property
Electron Saturation Velocity (Vsat)0.9 x 107cm/sCharge carrier transport property
Average Calibration Factor (k)35(mrad/s)/nADose rate per measured current
Total Systematic Uncertainty8%Uncertainty on calibration factor k
Integrated Dose Requirement> 10MradLifetime requirement for SuperKEKB

The following ordered steps outline the critical processes used for detector assembly, characterization, and calibration:

  1. Material Specification: High-quality sCVD diamond plates (0.50 mm thick) were sourced, featuring precise lateral and thickness tolerances (±0.2/-0 mm and ±0.05 mm, respectively).
  2. Electrode Deposition: A specific Ti/Pt/Au metal stack (100 nm Ti, 120 nm Pt, 250 nm Au) was deposited on both faces to create 4.0 x 4.0 mmÂČ electrodes.
  3. Packaging: Diamond sensors were mounted on a ceramic-like Rogers printed-circuit board (PCB) using conductive glue, with electrical connections established via ball-bonded gold wires and miniature coaxial cables.
  4. Dark Current Screening: Detectors were screened by scanning bias voltage up to ±800 V in the dark, ensuring leakage current remained below 10 pA at ±500 V.
  5. Charge Carrier Characterization (TCT): The Transient Current Technique was employed using a collimated 241Am alpha source (5.485 MeV) to measure drift velocity, mobility, and average ionization energy (Eeh).
  6. I-V Stability Measurement: Current-voltage profiles were measured under steady 90Sr beta electron irradiation to identify the optimal operating bias (|V| = 100 V) and assess current stability and transient response.
  7. Calibration Factor Determination: The current-to-dose-rate calibration factor (k) was derived by comparing the diamond detector current to a reference silicon diode current under identical 90Sr irradiation conditions, leveraging detailed FLUKA simulations.
  8. High Dose Validation: Calibration factors were cross-validated using X-ray (15 keV) and 60Co gamma ray sources to confirm linear response across the full required dose-rate range (tens of nrad/s to rad/s).

6CCVD is uniquely positioned to support the replication and advancement of this high-performance diamond dosimetry research, offering custom materials and processing capabilities that meet or exceed the specifications detailed in the paper.

The research requires high-purity, radiation-hard SCD material.

  • Optical Grade Single Crystal Diamond (SCD): 6CCVD supplies high-purity SCD plates, essential for achieving the near-unity Charge Collection Efficiency (CCE) and low Eeh (~13 eV) demonstrated in this study. Our SCD material ensures the long-term stability required for integrated doses exceeding 10 Mrad.
  • Polycrystalline Diamond (PCD) Option: For applications requiring larger area coverage or lower cost per unit area, 6CCVD offers high-quality PCD plates up to 125 mm in diameter, suitable for less stringent radiation environments or large-scale monitoring arrays.

6CCVD’s in-house manufacturing capabilities directly address the specific dimensional and metalization requirements of this project.

Requirement from Paper6CCVD CapabilityTechnical Advantage
Dimensions (4.5 x 4.5 mmÂČ, 0.50 mm thick)Custom Dimensions & Thickness: Plates/wafers up to 125 mm (PCD) and SCD thicknesses from 0.1 ”m to 500 ”m. Substrates up to 10 mm.Allows for scaling or miniaturization of detectors for future Belle II upgrades (e.g., 2022 silicon vertex detector).
Metalization Stack (Ti/Pt/Au: 100/120/250 nm)Custom Metalization: In-house deposition of Au, Pt, Pd, Ti, W, Cu.Ensures precise control over layer thickness and adhesion, critical for stable, non-blocking electrodes and minimizing hysteresis effects observed in the I-V profiles.
Surface Quality (Critical for electrode interface)Ultra-Low Roughness Polishing: Ra < 1 nm (SCD) and Ra < 5 nm (Inch-size PCD).Guarantees optimal diamond-electrode interface quality, crucial for achieving high CCE and low dark current (< 10 pA).

6CCVD’s technical team provides comprehensive support for complex detector projects:

  • Material Optimization: Our in-house PhD team can assist researchers in selecting the optimal diamond grade (SCD vs. PCD) and processing recipe (e.g., nitrogen incorporation, doping levels) for similar High-Energy Physics (HEP) Dosimetry and Beam-Loss Monitoring applications.
  • Processing Consultation: We offer expert consultation on metal stack design and deposition parameters to ensure stable current-voltage characteristics and radiation hardness, directly addressing the challenges of detector uniformity and stability reported in the paper.
  • Global Logistics: We provide reliable global shipping (DDU default, DDP available) to ensure timely delivery of critical components to international research facilities.

For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.

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