Microstructures Manufactured in Diamond by Use of Laser Micromachining
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2020-03-06 |
| Journal | Materials |
| Authors | Mariusz Dudek, Adam Rosowski, Marcin Kozanecki, Malwina Jaszczak, W. SzymaĆski |
| Institutions | Oxford Lasers (United Kingdom), Lodz University of Technology |
| Citations | 8 |
| Analysis | Full AI Review Included |
Advanced Technical Documentation: High-Precision Diamond Micromachining for Microfluidics and MEMS
Section titled âAdvanced Technical Documentation: High-Precision Diamond Micromachining for Microfluidics and MEMSâ6CCVD Analysis of âMicrostructures Manufactured in Diamond by Use of Laser Micromachiningâ
Executive Summary
Section titled âExecutive SummaryâThis study demonstrates the feasibility and precision of nanosecond (ns) pulsed laser micromachining on Microwave Plasma-Enhanced Chemical Vapor Deposition (MW PECVD) polycrystalline diamond (PCD) plates for applications requiring complex 3D structures, such as Microelectromechanical Systems (MEMS) and advanced microfluidics.
- Ultra-High Precision Achieved: Optimal laser parameters resulted in narrow, deep grooves (12.8 ”m narrowness, 245 ”m depth) with excellent wall perpendicularity (< 88.9° slope).
- Superior Surface Quality: Optimal processing conditions yielded exceptionally low surface roughness (Ra) values down to 0.135 ”m, crucial for functional microfluidic channels.
- Material Integrity Maintenance: The research successfully identified parameters (e.g., low scan speed of 100 mm/s at 9.5 W power) that minimize laser-induced phase transition, preventing the conversion of diamond (sp3) to graphite/amorphous carbon (sp2).
- Methodology: Micromachining utilized a 355 nm UV Diode-Pumped Solid State (DPSS) nanosecond laser system operating at a 50 kHz pulse repetition rate.
- Critical Parameter Correlation: Raman spectroscopy confirmed that increased scanning speed, due to local heating and rapid re-scanning, significantly promotes graphitization, necessitating precise control over the processing recipe.
- Application Potential: The demonstrated precision and surface quality validate PCD as a superior material for complex diamond microfluidic and photonic devices.
Technical Specifications
Section titled âTechnical Specificationsâ| Parameter | Value | Unit | Context / Observation |
|---|---|---|---|
| Substrate Material | Polycrystalline Diamond (PCD) | N/A | MW PECVD grown on Si substrate (seeded with nanodiamond) |
| Substrate Thickness (Initial) | 530 | ”m | Typical thickness used for bulk machining |
| Diamond Growth Rate | 1 | ”m/h | Deposition condition |
| Deposition Temperature | 820 | °C | Substrate temperature during MW PECVD |
| Material Hardness (HV) | 85.1 ± 10.2 | GPa | High intrinsic mechanical stability |
| Youngâs Modulus | 1114.5 ± 183.8 | GPa | High intrinsic mechanical stability |
| Laser Wavelength | 355 | nm | UV (Suitable for high absorption by diamond) |
| Laser Type | DPSS (Diode Pumped Solid State) | N/A | Nanosecond pulsed regime |
| Pulse Repetition Rate | 50 | kHz | Constant parameter |
| Average Power (Tested Range) | 5 to 11 (Optimal 9.5) | W | Power directly impacts graphitization severity |
| Scan Speed (Tested Range) | 50 to 400 | mm/s | Directly impacts surface temperature and phase transition |
| Hatching Distance (Scan Spacing) | 5 to 20 | ”m | Used for area filling / volumetric removal |
| Focused Spot Size | 21 | ”m | Determined by 163 mm F-Theta lens |
| Achieved Groove Narrowness | 12.8 | ”m | Optimal structure result |
| Achieved Groove Depth | 245 | ”m | Deep channel structure result |
| Achieved Groove Slope | < 88.9 | ° | Excellent perpendicularity |
| Achieved Surface Roughness (Ra) | 0.135 | ”m | Optimal result, suitable for microfluidic channel interiors |
| Diamond Raman Peak (Undisturbed) | 1332.9 | cm-1 | Reference sp3 bond signature |
| Graphite Raman D Peak (Disorder) | ~1350 | cm-1 | Appears with high power/speed (sp2 transformation) |
| Graphite Raman G Peak (Graphite) | ~1580 | cm-1 | Appears with high power/speed (sp2 transformation) |
Key Methodologies
Section titled âKey MethodologiesâThe study involved two primary stages: material synthesis via MW PECVD and subsequent high-precision laser micromachining.
I. PCD Substrate Synthesis (MW PECVD)
Section titled âI. PCD Substrate Synthesis (MW PECVD)â- Substrate Preparation: Silicon (Si) substrate was seeded with a detonation nanodiamond suspension via treatment in an ultrasonic bath.
- PECVD Parameters: Growth was conducted in a DF-100 system using the following recipe:
- Microwave Power: 3.6 kW
- Methane (CH4) Content: 2% (in H2 gas mixture)
- Total Gas Flow Rate: 800 sccm
- Pressure: 87 Torr
- Substrate Temperature: 820 °C
II. Nanosecond Laser Micromachining
Section titled âII. Nanosecond Laser Micromachiningâ- Laser System: A 355 nm UV DPSS laser (50 kHz pulse rate, 25/35 ns pulse duration) was utilized via a galvanometer scanning system with a 163 mm F-Theta lens (21 ”m spot size).
- Hatching Technique: Material removal was achieved by filling defined shapes using linear scanning lines (hatching). Both single pattern (0°) and double-pattern (0° and 90°) techniques were employed.
- Process Optimization: Parameters were varied to assess geometry and material integrity:
- Average Laser Power: Tested from 5 W to 11 W.
- Scanning Speed: Tested from 50 mm/s (low pulse overlap) to 400 mm/s (high pulse overlap).
- Hatching Distance: Tested from 5 ”m (high overlap) to 20 ”m (low overlap).
- Graphitization Control: Low scanning speeds (e.g., 100 mm/s) were found necessary to allow adequate heat dissipation from the modified surface, preventing the formation of sp2 (graphite/amorphous carbon) phases confirmed by Raman spectroscopy.
- Microstructure Analysis: Machined structures were characterized using SEM, Confocal Laser Scanning Microscopy (CLSM) for geometry (depth, roughness, slope), and Raman spectroscopy (514.5 nm excitation) for detecting material phase changes.
6CCVD Solutions & Capabilities
Section titled â6CCVD Solutions & CapabilitiesâThe findings confirm that ultra-precision microstructuresâcritical for advanced thermal, fluidic, and photonic devicesâcan be reliably manufactured in MPCVD diamond, provided the substrate quality and processing control are exceptional. 6CCVD is uniquely positioned to supply the foundational materials and specialized engineering services required to replicate and scale this research.
Applicable Materials for Microfluidic/MEMS Applications
Section titled âApplicable Materials for Microfluidic/MEMS ApplicationsâTo achieve the lowest possible roughness (Ra 0.135 ”m achieved in the paper) and maintain structural integrity post-machining, the quality of the starting diamond material is paramount.
| 6CCVD Recommended Material | Specification | Relevance to Research Needs |
|---|---|---|
| Optical Grade PCD | Wafers up to 125mm in size; low impurity concentration. | Offers the balance of low cost and suitable thermal properties for scaling large microfluidic arrays. |
| High Purity Single Crystal Diamond (SCD) | Ra < 1nm Polishing achievable; superior defect density control. | Ideal for replicating the sharpest grooves and highest geometric fidelity, especially in photonic or biological fluidics where surface roughness is critical. |
| Polished Substrates | Standard PCD or SCD plates with Ra < 5nm (PCD) or Ra < 1nm (SCD). | Providing pre-polished material reduces subsequent post-processing steps and aids in achieving the final low Ra surface reported in the paper (0.135 ”m). |
| Custom Thickness Wafers | SCD/PCD from 0.1 ”m up to 500 ”m (or substrates up to 10mm). | The paper used 530 ”m; 6CCVD provides custom thickness to match specific device requirements (e.g., thinner membranes for high-sensitivity MEMS sensors). |
Customization Potential
Section titled âCustomization PotentialâThe research highlights the need for precise, custom structural features in diamond. 6CCVD offers extensive in-house services to transition research findings into scalable engineering solutions:
- Custom Machining & Shaping: 6CCVD can provide laser cutting, dicing, and highly controlled CNC shaping to deliver substrates ready for micro-machining, including the precise dimensions (e.g., 10 ”m narrowness) required by the end application.
- Precision Metalization Services: Many diamond microfluidic and MEMS devices require integrated electrodes, heaters, or sensor contacts. 6CCVD provides in-house metalization using thin film deposition of: Ti, Pt, Au, Pd, W, and Cu. This is essential for converting passive microstructures (grooves) into active microchips (e.g., electrophoretic or resistive heating devices).
- Dimensional Scaling: While the research focused on small test structures, 6CCVD can provide large-area PCD substrates up to 125 mm diameter, enabling the scale-up of microfluidic platforms and photonic integrated circuits.
Engineering Support
Section titled âEngineering SupportâThe core challenge of this research was optimizing laser parameters (power, scan speed, pulse overlap) to prevent thermal degradation and graphitization (sp2 carbon).
- 6CCVDâs in-house PhD-level engineering team specializes in the interaction of energy systems (such as lasers) with MPCVD diamond structure. We assist clients in modeling thermal effects and selecting materials to minimize undesirable phase transitions, ensuring maximum sp3 quality remains after processing.
- We offer technical consulting on achieving specific mechanical or optical properties (Hardness 85.1 GPa, high Youngâs Modulus) required for robust Microfluidic Devices and MEMS components.
- Global Shipping Assurance: 6CCVD provides reliable global shipping (DDU default, DDP available) to ensure timely delivery of high-value diamond substrates anywhere in the world.
For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.
View Original Abstract
Different microstructures were created on the surface of a polycrystalline diamond plate (obtained by microwave plasma-enhanced chemical vapor depositionâMW PECVD process) by use of a nanosecond pulsed DPSS (diode pumped solid state) laser with a 355 nm wavelength and a galvanometer scanning system. Different average powers (5 to 11 W), scanning speeds (50 to 400 mm/s) and scan line spacings (âhatch spacingâ) (5 to 20 ”m) were applied. The microstructures were then examined using scanning electron microscopy, confocal microscopy and Raman spectroscopy techniques. Microstructures exhibiting excellent geometry were obtained. The precise geometries of the microstructures, exhibiting good perpendicularity, deep channels and smooth surfaces show that the laser microprocessing can be applied in manufacturing diamond microfluidic devices. Raman spectra show small differences depending on the process parameters used. In some cases, the diamond band (at 1332 cmâ1) after laser modification of material is only slightly wider and shifted, but with no additional peaks, indicating that the diamond is almost not changed after laser interaction. Some parameters did show that the modification of material had occurred and additional peaks in Raman spectra (typical for low-quality chemical vapor deposition CVD diamond) appeared, indicating the growing disorder of material or manufacturing of the new carbon phase.
Tech Support
Section titled âTech SupportâOriginal Source
Section titled âOriginal SourceâReferences
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