Optimization of Machining Parameters of SiC Single Crystal Cut by Diamond Wire Saw

At a Glance

Metadata	Details
Publication Date	2018-01-01
Journal	MATEC Web of Conferences
Authors	Lun Li, Shaodong Yang, Jishun Li
Institutions	Henan University of Science and Technology
Citations	1
Analysis	Full AI Review Included

Technical Documentation & Analysis: Optimization of SiC Single Crystal Cutting

This document analyzes the research paper “Optimization of Machining Parameters of SiC Single Crystal Cut by Diamond Wire Saw” to highlight 6CCVD’s capabilities in providing advanced MPCVD diamond materials for high-precision processing and next-generation semiconductor applications.

Executive Summary

This research successfully optimized the diamond wire sawing process for Single Crystal Silicon Carbide (SiC SCD) wafers, a critical step in third-generation semiconductor manufacturing.

Objective: Minimize both Sawing Force (F) and Surface Roughness (Ra) during the cutting of hard, brittle SiC material.
Methodology: Utilized an L9 (3⁴) orthogonal experimental design coupled with Grey System Theory (Grey Relational Analysis) for multi-objective optimization.
Key Finding: Workpiece Feed Speed (Parameter B) was identified as the most significant factor influencing both sawing force and surface quality.
Optimal Recipe: The best combination of parameters was determined to be Wire Saw Speed (1.6 m/s), Workpiece Feed Speed (0.025 mm/min), and Workpiece Rotation Speed (12 r/min).
Performance Achieved: The optimal combination resulted in a Sawing Force (F) of 4.58 N and a Surface Roughness (Ra) of 0.684 µm.
6CCVD Relevance: This work underscores the extreme difficulty and cost associated with processing wide-bandgap materials like SiC. 6CCVD provides superior MPCVD diamond substrates and plates, which offer unmatched thermal and electronic performance, often requiring similar high-precision processing standards.

Technical Specifications

The following hard data points were extracted from the experimental results and optimal parameter analysis:

Parameter	Value	Unit	Context
Optimal Sawing Force (F)	4.58	N	Result of multi-objective optimization
Optimal Surface Roughness (Ra)	0.684	µm	Result of multi-objective optimization
Optimal Wire Saw Speed (A)	1.6	m/s	Level 2 setting (B1A2C2 combination)
Optimal Workpiece Feed Speed (B)	0.025	mm/min	Level 1 setting (B1A2C2 combination)
Optimal Workpiece Rotation Speed (C)	12	r/min	Level 2 setting (B1A2C2 combination)
Wire Saw Speed Range (A)	1.3 - 1.9	m/s	Experimental input range
Workpiece Feed Speed Range (B)	0.025 - 0.08	mm/min	Experimental input range
Workpiece Rotation Speed Range (C)	8 - 16	r/min	Experimental input range
Grey Correlation Resolution Coefficient (µ)	0.85	N/A	Used in Grey Relational Analysis
Cooling Medium	Tap Water	N/A	Used during cutting process

Key Methodologies

The experiment utilized a systematic approach combining physical testing with advanced statistical analysis to optimize the complex cutting process:

Equipment: A modified WXD170 type reciprocating diamond wire saw rotary cutting machine was used.
Experimental Design: An L9 (3⁴) orthogonal table was employed to efficiently test the influence of three primary process parameters (Wire Saw Speed, Workpiece Feed Speed, and Workpiece Rotation Speed) across three distinct levels.
Force Measurement: Sawing Force (F) was collected in real-time using an American ATI multi-axis force/torque sensor (Gama SI-32-2.5) and an American NI 16-channel data acquisition system (9105-MIUSB).
Roughness Measurement: Surface Roughness (Ra) was measured using a Leica DCM 3D confocal microscope, taking measurements from six different directions at the center of the SiC section.
Optimization Technique: Grey System Theory (specifically Grey Relational Analysis) was introduced to handle the multi-objective optimization problem (minimizing F and Ra simultaneously) by calculating the Grey Correlation Degree for each parameter combination.
Result Analysis: The analysis determined the order of influence on the multi-target output characteristics: Workpiece Feed Speed > Wire Saw Speed > Workpiece Rotation Speed.

6CCVD Solutions & Capabilities

The challenges faced in cutting SiC—a material known for its high hardness and high production cost—highlight the need for materials and processing capabilities that meet or exceed these stringent requirements. 6CCVD specializes in MPCVD diamond, the ultimate wide-bandgap material, and offers the necessary precision engineering services.

Applicable Materials

To replicate or extend research into advanced wide-bandgap materials, 6CCVD recommends the following materials, which offer superior thermal and electronic properties compared to SiC:

Electronic Grade Single Crystal Diamond (SCD): Ideal for high-power, high-frequency, and quantum applications where SiC is often limited by thermal conductivity and defect density. Available in thicknesses from 0.1 µm to 500 µm.
High-Purity Polycrystalline Diamond (PCD): Excellent for large-area thermal management substrates or as the base material for fixed abrasive tools (like the diamond wire saw used in the study). Available up to 125 mm diameter.
Boron-Doped Diamond (BDD): Used for electrochemical applications, sensors, and high-conductivity electrodes, offering stable performance in harsh environments.

Customization Potential

The paper emphasizes the critical role of surface quality (Ra) and precise dimensions in semiconductor wafer processing. 6CCVD’s in-house capabilities directly address these needs:

Requirement/Challenge	6CCVD Capability	Technical Specification
Ultra-Low Surface Roughness	Advanced Chemical Mechanical Polishing (CMP)	SCD: Ra < 1 nm (Far superior to the 0.684 µm achieved on SiC)
		Inch-size PCD: Ra < 5 nm
Large Wafer Dimensions	Custom MPCVD Growth	PCD plates/wafers up to 125 mm diameter
Integrated Device Fabrication	In-House Metalization Services	Custom deposition of Au, Pt, Pd, Ti, W, Cu contacts
Precise Thickness Control	Custom Growth and Laser Cutting	SCD/PCD layers from 0.1 µm to 500 µm
Substrate Handling	Thick Substrates	Diamond substrates available up to 10 mm

Engineering Support

The use of complex optimization techniques like Grey System Theory demonstrates the need for expert guidance in processing hard, brittle materials.

Process Consultation: 6CCVD’s in-house PhD engineering team specializes in the growth, processing, and integration of diamond materials. We can assist researchers and engineers in selecting the optimal diamond grade (SCD, PCD, BDD) and orientation for similar Wide-Bandgap Semiconductor or High-Precision Machining projects.
Global Logistics: We ensure reliable global delivery, offering DDU (Delivered Duty Unpaid) as default and DDP (Delivered Duty Paid) options for seamless material acquisition worldwide.

For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.

View Original Abstract

For the process of optimizing the process parameters in the process of cutting the hard and brittle materials such as single-crystal SiC by diamond wire saw, the process parameters such as wire saw speed, workpiece feed speed and workpiece rotation speed are the design variables, and the sawing force and surface roughness are the processing targets by orthogonal experimental design. The grey system theory is introduced to optimize the multi-objective cutting process. According to the experimental data, the grey correlation resolution coefficient is determined. The significant relationship between the processing parameters and the target characteristics is analyzed. The optimal combination of process parameters under multi-target conditions is obtained, namely the workpiece feed rate is 0.025mm/min, the wire saw speed is 1.6m/s, and the workpiece rotating speed is 16r/min.

Tech Support

Original Source

DOI: https://doi.org/10.1051/matecconf/201823203002