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High-sensitivity spin-based electrometry with an ensemble of nitrogen-vacancy centers in diamond

MetadataDetails
Publication Date2017-05-26
JournalPhysical review. A/Physical review, A
AuthorsEdward H. Chen, Hannah Clevenson, Kerry A. Johnson, Linh Pham, Dirk Englund
InstitutionsTexas A&M University, MIT Lincoln Laboratory
Citations80
AnalysisFull AI Review Included

Technical Documentation & Analysis: Spin-Based Electrometry in MPCVD Diamond

Section titled “Technical Documentation & Analysis: Spin-Based Electrometry in MPCVD Diamond”

This research demonstrates a robust, high-sensitivity, spin-based electrometer utilizing an ensemble of Nitrogen-Vacancy (NV-) centers in Chemical Vapor Deposition (CVD) diamond. The findings validate diamond as a leading platform for miniaturized, ambient-condition electric field sensing.

  • Core Achievement: Demonstrated shot-noise limited electric field sensitivity approaching 1 V/cm/√Hz under ambient conditions (0.05-10 Hz).
  • Methodology: Utilized the Stark effect on the NV- degenerate triplet states, combined with symmetric detection to achieve first-order immunity to temperature fluctuations.
  • Material Used: A 3.0 x 3.0 x 0.32 mm3 CVD diamond plate with a low NV- density (~1 ppb) was used, featuring evaporated Gold (Au) electrodes.
  • Noise Mitigation: The technique successfully deconvolved temperature fluctuations (2.4 ± 1.2 mK/√Hz) from electric field fluctuations (1.6 ± 1.2 V/cm/√Hz), resulting in an 8x improvement in sensitivity over non-deconvolved measurements.
  • Future Potential: The authors project a shot-noise limited sensitivity of 6 x 10-3 V/cm/√Hz by utilizing diamond with 1000x higher NV- densities and improved photon collection efficiency.
  • 6CCVD Relevance: This work confirms the critical need for high-quality, low-strain, custom-dimensioned MPCVD diamond substrates with precisely controlled NV doping and integrated metalization, all of which are core 6CCVD capabilities.
ParameterValueUnitContext
Diamond Dimensions3.0 x 3.0 x 0.32mm3CVD grown plate, (100) orientation faces
NV- Density (Experimental)~1ppbLow density, produced during CVD growth
Achieved Sensitivity (Ambient)~1V/cm/√HzShot-noise limited, low frequency (0.05-10 Hz)
Projected Sensitivity (High Density)6 x 10-3V/cm/√HzRequires 1000x higher NV density
Operating Frequency Range0.05 - 10HzExtremely low frequency regime
Laser Excitation Power (CW)1.8WUsed for maximum sensitivity
Laser Power Density (Incident)~30”W/”m2High power density contributed to temperature noise
Bias Voltage (High Stability)225VoltsUsed for ODMR measurements
Transverse Electric Susceptibility (k⊄)7.0 ± 1.1Hz/(V/cm)Measured ensemble average at 225V bias
Ground State Crystal Field Splitting (D)2.8GHzNV- ground state parameter
Excited State Crystal Field Splitting (D)1.4GHzNV- excited state parameter
Temperature Fluctuation Noise Floor2.4 ± 1.2mK/√HzMeasured via correlated ODMR sum channel

The experiment relied on precise material engineering and advanced optical/microwave control techniques:

  1. Substrate Preparation: A CVD diamond plate (3.0 x 3.0 x 0.32 mm3) with (100) crystallographic orientation was selected to ensure the applied electric field produced an equal projection onto all eight NV orientations.
  2. Electrode Deposition: Gold (Au) electrodes were evaporated onto the two square faces of the diamond plate to enable the application of the external electric field.
  3. Excitation and MW Delivery: A collimated CW laser beam (~200 ”m diameter) was used for excitation. Microwave (MW) excitation was delivered to the NV ensemble via an ‘Ω’ shaped stripline patterned on a printed circuit board.
  4. Magnetic Field Zeroing: A gradient descent method was employed to zero the magnetic field (B = 0), maximizing the ODMR contrast and achieving optimal electric field sensitivity.
  5. ODMR Measurement: Optically Detected Magnetic Resonance (ODMR) was measured using continuous-wave laser and MW excitation.
  6. Noise Deconvolution: Temperature and electric field fluctuations were separated by monitoring two electric and strain sensitive transitions (mI = ±0). The sum of the time traces corresponded to temperature fluctuations (D parameter shift), while the difference corresponded to electric field fluctuations (Stark shift).
  7. Lock-In Amplification: An FPGA-based high-speed DAC system performed both waveform generation and lock-in detection to read out the optical signals, enabling measurement at extremely low frequencies (0.05 Hz).

This research highlights the need for specialized diamond materials and fabrication services to push NV electrometry sensitivity into the 10-3 V/cm/√Hz regime. 6CCVD is uniquely positioned to supply the required custom substrates and integrated services.

Requirement from Paper/Projection6CCVD Solution & CapabilityTechnical Advantage
Low-Strain Substrate for CoherenceOptical Grade Single Crystal Diamond (SCD)SCD offers superior crystalline quality and low intrinsic strain, essential for maximizing the inhomogeneous NV- coherence time (T2*) and achieving shot-noise limited detection. We guarantee Ra < 1 nm polishing for optimal optical coupling.
High NV Ensemble DensityCustom Nitrogen Doping (PCD/SCD)To achieve the projected 6 x 10-3 V/cm/√Hz sensitivity (requiring 1000x higher NV density), 6CCVD provides precise control over nitrogen incorporation during MPCVD growth to optimize NV concentration.
Custom Device DimensionsCustom Plates/Wafers up to 125 mmThe experiment used a 3.0 x 3.0 x 0.32 mm3 plate. 6CCVD specializes in custom laser cutting and precise thickness control (0.1 ”m to 10 mm substrates) to meet exact micro-device integration requirements.
Integrated Electrode FabricationInternal Metalization ServicesThe device required evaporated Gold (Au) electrodes. 6CCVD offers in-house deposition of standard stacks (e.g., Ti/Pt/Au, Ti/W/Au) optimized for adhesion and low-resistance contacts on diamond surfaces, streamlining device fabrication.
Surface Quality for Optical ReadoutUltra-Precision Polishing (Ra < 1 nm)High-quality polishing minimizes scattering losses and ensures uniform electrode adhesion, critical for high-efficiency photon collection (I) and maximizing ODMR contrast (C).

6CCVD’s in-house PhD team provides expert consultation on material selection and optimization for advanced quantum sensing applications. We can assist researchers in defining the optimal balance between NV density, strain management, and surface preparation necessary to replicate or extend this high-sensitivity NV electrometry project.

For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.

View Original Abstract

We demonstrate a spin-based, all-dielectric electrometer based on an ensemble\nof nitrogen-vacancy (NV$^-$) defects in diamond. An applied electric field\ncauses energy level shifts symmetrically away from the NV$^-$‘s degenerate\ntriplet states via the Stark effect; this symmetry provides immunity to\ntemperature fluctuations allowing for shot-noise-limited detection. Using an\nensemble of NV$^-$s, we demonstrate shot-noise limited sensitivities\napproaching 1 V/cm/$\sqrt{\text{Hz}}$ under ambient conditions, at low\nfrequencies ($<$10 Hz), and over a large dynamic range (20 dB). A theoretical\nmodel for the ensemble of NV$^-$s fits well with measurements of the\nground-state electric susceptibility parameter, $\langle k_\perp\rangle$.\nImplications of spin-based, dielectric sensors for micron-scale electric-field\nsensing are discussed.\n