Ab initio study of avalanche breakdown in diamond for power device applications
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2015-12-01 |
| Authors | Yoshinari Kamakura, Takao Kotani, K. Konaga, Natsumi Minamitani, Go Wakimura |
| Institutions | The University of Osaka, Tottori University |
| Citations | 12 |
Abstract
Section titled “Abstract”We investigate the high-field carrier transport in diamond using a full band Monte Carlo method based on ab initio calculations. The calculated breakdown field and breakdown voltage show good agreement with experimental data of n <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>+</sup> p <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>-</sup> one-sided abrupt junctions with the acceptor density <; 10 <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>17</sup> cm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>-3</sup> . The evaluated power device figure-of-merit of diamond suggests its advantage for high temperature applications.