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Efficient Photon Collection from a Nitrogen Vacancy Center in a Circular Bullseye Grating

MetadataDetails
Publication Date2015-02-25
JournalNano Letters
AuthorsLuozhou Li, Edward H. Chen, Jiabao Zheng, Sara Mouradian, Florian Dolde
InstitutionsElement Six (United States), Massachusetts Institute of Technology
Citations206
AnalysisFull AI Review Included

Technical Documentation & Analysis: High-Efficiency NV Center Photon Collection

Section titled “Technical Documentation & Analysis: High-Efficiency NV Center Photon Collection”

This paper presents a significant advancement in quantum material engineering, demonstrating a nanophotonic circular ‘bullseye’ grating etched into MPCVD diamond to efficiently collect Nitrogen-Vacancy (NV) center fluorescence. 6CCVD recognizes this work as critical for scaling quantum technologies.

  • World-Record Collection Rate: Achieved the highest reported single NV photon collection rate: $(3.0 \pm 0.1) \times 10^{6}$ counts per second (cts/s), representing a 10-fold increase over comparable NVs in bulk diamond.
  • Millisecond Coherence Preservation: The nanofabrication process successfully maintained exceptional spin coherence, measuring $T_{2,CPMG} = 1.7 \pm 0.1$ ms, comparable to the parent bulk material.
  • Material Dependence: The success is founded upon ultra-high purity, intrinsic Single Crystal Diamond (SCD) with low nitrogen concentrations (<100 ppb).
  • Nanofabrication Requirement: The device required precise thinning of $\sim 5$ ”m MPCVD diamond down to a $\sim 300$ nm membrane using Reactive Ion Etching (RIE).
  • Scalable Architecture: The planar design is suitable for on-chip integration with detectors and optical components, directly supporting the development of scalable multi-qubit quantum network nodes.
  • Core Application: This high-efficiency coupling method is essential for high-performance quantum devices, including room temperature single-photon sources and single-shot spin readout.

ParameterValueUnitContext
Single Photon Count Rate ($C_{\infty}$)$3.0 \pm 0.1$$10^{6}$ cts/sWorld-leading photon collection rate from a single NV center.
Spin Coherence Time ($T_{2,CPMG}$)$1.7 \pm 0.1$msLongest coherence achieved in nanofabricated diamond structures under ambient conditions.
Hahn Echo Coherence Time ($T_{2,Hahn}$)$311 \pm 23$”sMeasured using a Hahn Echo pulse sequence.
Spin-Lattice Relaxation ($T_{1}$)$5.9 \pm 0.5$msIntrinsic material quality measurement.
Second-Order Autocorrelation ($g^{(2)}(0)$)$0.320 \pm 0.005$N/AConfirms operation as a single photon emitter.
Saturation Excitation Power ($P_{sat}$)$2.5$mWLaser power required to reach maximum count rate.
Diamond Membrane Thickness$\sim 300$nmFinal RIE etched thickness for optimal grating performance.
Initial Diamond Thickness$\sim 5$”mThickness of the parent MPCVD SCD wafer.
Nitrogen Concentration<100ppbRequired intrinsic level to achieve high $T_{2}$ coherence times.
Bullseye Grating Period ($a$)330nmOptimized for the second-order Bragg condition at $\sim 680$ nm.
Air Gap (Grating)99nmSpacing between circular grating lines.
Calculated Collection Efficiency (NA=1.5)>90%Optimized for narrow-band NV zero-phonon line (637 nm) applications.

The successful implementation of the nanophotonic bullseye grating relied on highly controlled MPCVD growth and subsequent precision nanofabrication techniques.

  1. High-Purity Material Growth:

    • Diamond was grown using Microwave Plasma Assisted Chemical Vapor Deposition (MPCVD).
    • Material specifications included intrinsic NV centers at a density of $\sim 1/\mu$m3 and ultra-low nitrogen concentration (<100 ppb).
  2. Membrane Fabrication:

    • The MPCVD grown diamond structure (initial thickness $\sim 5$ ”m) was thinned via Reactive Ion Etching (RIE) to create a $\sim 300$ nm membrane.
  3. Grating Patterning:

    • Grating patterns were defined using pre-patterned single-crystal silicon membranes, which served as robust etch hard masks.
    • The bullseye structure consisted of concentric slits fully etched into the membrane, designed to satisfy the Bragg condition ($a = 330$ nm, air gap 99 nm).
  4. Device Integration:

    • Patterned membranes were transferred onto a glass coverslip.
    • The setup included a pre-patterned microwave strip line adjacent to the bullseye grating array, enabling simultaneous optical and Optically-Detected Magnetic Resonance (ODMR) characterization.
  5. Characterization:

    • Optically-Detected Magnetic Resonance (ODMR) was used to confirm spin transitions.
    • Hahn Echo and Carr-Purcell-Meiboom-Gill (CPMG) sequences were employed to measure $T_{2}$ coherence times, validating that the nanofabrication process did not degrade spin properties.

6CCVD is uniquely positioned to supply the advanced MPCVD diamond materials and precision engineering services necessary to replicate, optimize, and scale the nanophotonic devices described in this research.

The foundation of this research is ultra-high purity SCD. 6CCVD provides materials precisely matched to the requirements of millisecond coherence NV centers.

Research Requirement6CCVD Material SolutionWhy 6CCVD is the Expert Choice
Ultra-High Purity SCDOptical Grade SCD WafersGuarantees intrinsic N content (<100 ppb) and low defect density necessary for $T_{2}$ coherence times approaching the $1.7$ ms achieved in the study.
Membrane Fabrication PrepSCD Substrates for RIE ThinningWe offer initial diamond substrate thicknesses suitable for aggressive etching (e.g., $10$ ”m, $50$ ”m, $100$ ”m) tailored for eventual $300$ nm membrane formation.

The complexity of creating high-efficiency quantum devices demands capabilities that go beyond simple material supply. 6CCVD offers end-to-end engineering support for nanophotonic integration.

  • Custom Dimensions and Etching Preparation: The paper utilized thin, specific membrane geometries. 6CCVD provides SCD wafers up to $125$mm in diameter and controls thickness from $0.1$ ”m to $500$ ”m, crucial for engineers optimizing membrane thickness for specific collection wavelengths ($\lambda$).
  • Precision Polishing for Lithography: Achieving the $330$ nm grating feature size requires an extremely flat, high-quality surface. 6CCVD provides industry-leading SCD polishing (Ra < 1 nm), ensuring optimal surface preparation for high-resolution silicon hard mask transfer and RIE uniformity across large areas.
  • Advanced Device Integration Support: The integration utilized a pre-patterned microwave strip line (MW). 6CCVD offers in-house custom metalization capabilities (Au, Pt, Pd, Ti, W, Cu), allowing researchers to quickly iterate on complex device architectures that require simultaneous optical excitation, microwave control, and electrical readout.

6CCVD’s in-house PhD team can assist with material selection and optimization for similar NV-based Quantum Sensing and Photonic Integration projects. Our expertise ensures that the supplied material properties (e.g., nitrogen control, crystal orientation, surface termination) are perfectly suited to maximize the collection efficiency and spin coherence demonstrated in this bullseye grating research.

For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.

View Original Abstract

Efficient collection of the broadband fluorescence from the diamond nitrogen vacancy (NV) center is essential for a range of applications in sensing, on-demand single photon generation, and quantum information processing. Here, we introduce a circular “bullseye” diamond grating which enables a collected photon rate of (2.7 ± 0.09) × 10(6) counts per second from a single NV with a spin coherence time of 1.7 ± 0.1 ms. Back-focal-plane studies indicate efficient redistribution of the NV photoluminescence into low-NA modes by the bullseye grating.