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Spin squeezing in an ensemble of nitrogen–vacancy centres in diamond

MetadataDetails
Publication Date2025-10-01
JournalNature
AuthorsWeijie Wu, Emily J Davis, Lillian Hughes, Bingtian Ye, Zilin Wang
InstitutionsUniversity of California, Santa Barbara, Harvard University
Citations2
AnalysisFull AI Review Included

Technical Analysis and Documentation: Spin Squeezing in NV Ensembles

Section titled “Technical Analysis and Documentation: Spin Squeezing in NV Ensembles”

This document analyzes the research demonstrating the first experimental spin squeezing in a solid-state spin system using nitrogen-vacancy (NV) centers in diamond. The findings validate the use of high-purity MPCVD diamond as a critical platform for entanglement-enhanced quantum metrology and sensing.


This research presents a significant breakthrough in solid-state quantum technology, achieving metrologically useful entanglement in an ensemble of NV centers.

  • First Solid-State Spin Squeezing: Experimental demonstration of spin squeezing in a room-temperature, solid-state spin ensemble, achieving an optimal squeezing result of -0.50 ± 0.10 dB.
  • Material Foundation: Success relies entirely on a high-quality, (111)-oriented diamond substrate featuring a 99.998% 12C isotopically purified epilayer with a precisely controlled nitrogen delta-doped layer.
  • Overcoming Disorder: The study successfully implemented novel “lattice engineering” protocols (frequency-selective shelving and adiabatic depolarization) to mitigate the rapid decay of collective spin length caused by positional disorder (strongly-coupled NV dimers).
  • Advanced Readout: A new interaction-enabled noise spectroscopy protocol was developed to characterize quantum variance without requiring projection-noise-limited readout, a major challenge in solid-state systems.
  • Application Potential: This work opens the door to entanglement-enhanced metrology, enabling quantum sensors capable of measuring signals otherwise undetectable, particularly relevant for biological and condensed matter physics.
  • 6CCVD Value Proposition: 6CCVD is uniquely positioned to supply the necessary ultra-high purity Single Crystal Diamond (SCD) substrates with custom isotopic enrichment and precise delta-doping profiles required for scaling this quantum technology.

The following hard data points were extracted from the experimental results and material characterization:

ParameterValueUnitContext
Optimal Spin Squeezing-0.50 ± 0.10dBAchieved using adiabatic depolarization method
Squeezing Parameter (ξ2)0.89(2)DimensionlessOptimal value observed at tg = 1.6 µs
Operating EnvironmentRoomTemperatureSolid-state quantum sensor operation
Diamond Orientation(111)Crystal PlaneRequired for uniform, long-range XXZ Hamiltonian
Epilayer Isotopic Purity99.998%12CEssential for long spin coherence times
Epilayer Thickness~270nmLow 13C density layer thickness
Delta-Doped Layer FWHM7 ± 7/11nmThickness of the nitrogen doping profile
NV Density (Working Group)8ppm·nmInferred density for out-of-plane NV group
P1 Density (Estimated)~75ppm·nmSubstitutional nitrogen defects (P1 centers)
Average Twisting Strength (χeff)(2π) × 150kHzExtracted from early-time precession slope
Optimal Generation Time (tg)1.6µsTime required to achieve minimum variance

The successful demonstration relied on precise material synthesis and advanced quantum control protocols:

  1. Material Synthesis (PECVD): Growth performed on a (001)-oriented CVD substrate sliced along the (111) plane. The epilayer was grown at 770 °C, achieving 99.998% 12C isotopic purification to minimize decoherence from 13C nuclear spins.
  2. NV Creation and Doping: Nitrogen delta-doping was achieved by introducing 15N gas for 1 minute during growth. NV centers were subsequently created via 200 keV electron irradiation (1.29 × 1020 e/cm2 dosage) followed by high-temperature annealing (400 °C and 850 °C).
  3. Disorder Mitigation (Lattice Engineering): Two protocols were implemented to spectrally isolate and “remove” strongly-coupled NV dimers, which otherwise cause rapid decay of the collective spin length:
    • Frequency-Selective Shelving: Utilizing a weak microwave π-pulse with high frequency selectivity to shelve dimers into the unused |ms = +1> state, decoupling them from the active {|ms = 0>, |ms = -1>} subspace.
    • Adiabatic Depolarization: Applying a strong, resonant microwave drive and ramping down the transverse field (hx) to selectively depolarize strongly-interacting clusters, effectively removing their contribution to the collective spin dynamics.
  4. Squeezing Generation: The spin-polarized state was allowed to evolve under the native dipolar interactions (HXXZ) for a time tg, while an XY-8 pulse sequence dynamically decoupled the NV ensemble from quasi-static fields (e.g., P1 centers).
  5. Quantum Variance Readout: The anisotropic spin projection noise was measured indirectly via an interaction-enabled noise spectroscopy protocol, monitoring the decay timescale (T2) of the collective spin length during a quench protocol.

6CCVD provides the foundational MPCVD diamond materials and customization services essential for replicating and scaling this advanced quantum metrology research.

To replicate or extend this research, engineers require diamond with exceptional purity, precise orientation, and controlled doping profiles. 6CCVD recommends:

Material Specification6CCVD CapabilityRelevance to Spin Squeezing
Optical Grade SCDSCD plates/wafers with 99.998% 12C isotopic purity.Minimizes decoherence (T2) from 13C nuclear spins, crucial for maintaining entanglement over time tg.
Custom OrientationSCD substrates available in (111) orientation.Essential for aligning the NV quantization axis perpendicular to the 2D plane, simplifying the Hamiltonian to the uniform, long-range XXZ form.
Precision DopingCustom delta-doping (Nitrogen or 15N) with layer thickness control (0.1 µm - 500 µm).Allows precise control over the 2D ensemble density (8 ppm·nm used here) and layer thickness (~7 nm FWHM) to optimize dipolar interactions.
Substrate ThicknessSubstrates up to 10 mm thick; SCD layers from 0.1 µm to 500 µm.Enables scaling of the epilayer thickness and provides robust mechanical support for complex experimental setups.

Customization Potential for Scaling Quantum Sensors

Section titled “Customization Potential for Scaling Quantum Sensors”

The research highlights that positional disorder is the primary limitation to achieving greater squeezing. Future work requires deterministic placement of NV centers. 6CCVD supports this scaling effort through comprehensive customization:

  • Deterministic NV Placement: While the paper used random doping, future efforts involve localized ion implantation [66, 67]. 6CCVD provides the necessary ultra-low defect density SCD substrates optimized for post-growth ion implantation and subsequent high-yield NV formation.
  • Custom Dimensions: 6CCVD can supply SCD wafers up to 125 mm in diameter, facilitating the transition from laboratory-scale experiments to scalable, inch-size quantum sensor arrays.
  • Advanced Metalization: The experimental setup requires microwave delivery via striplines. 6CCVD offers in-house metalization services (Au, Pt, Pd, Ti, W, Cu) for patterning microwave circuits directly onto the diamond surface, ensuring optimal coupling and control pulse delivery.
  • Surface Quality: Our SCD polishing achieves Ra < 1 nm, ensuring minimal surface roughness which is critical for high-fidelity optical initialization and readout, and minimizing roughness-induced broadening in SIMS analysis.

6CCVD’s in-house team of PhD material scientists and quantum engineers specializes in MPCVD growth recipes tailored for quantum applications. We offer consultation services to assist researchers in optimizing material parameters—such as 12C purity, 15N concentration, and delta-doping depth—to maximize coherence times and control the dipolar interaction strength (J0) for similar entanglement-enhanced metrology projects.

For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.