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Suppression of coherent errors during entangling operations in NV centers in diamond

MetadataDetails
Publication Date2025-08-18
JournalApplied Physics Letters
AuthorsRegina Finsterhoelzl, Guido Burkard
InstitutionsUniversity of Konstanz
AnalysisFull AI Review Included

Technical Documentation: High-Fidelity Quantum Gates in Diamond NV Centers

Section titled “Technical Documentation: High-Fidelity Quantum Gates in Diamond NV Centers”

This document analyzes the research on suppressing coherent errors in Nitrogen-Vacancy (NV) center entangling operations, focusing on the material requirements and technical solutions offered by 6CCVD for advancing scalable quantum computation.


This research presents critical advancements in achieving high-fidelity, fast CNOT gates using the electron spin and coupled $^{13}$C nuclear spins in diamond NV centers.

  • Error Suppression: Protocols based on synchronization effects completely suppress coherent errors arising from off-resonant driving and non-negligible perpendicular hyperfine tensor components ($A_{\perp}$).
  • Fidelity Achievement: Demonstrated average gate fidelities ($F_{avg}$) up to 0.99999 in the weak driving regime, and significant enhancement in the strong driving regime where errors are typically dominant.
  • Speed Enhancement: The synchronization scheme enables operation in the strong driving regime, reducing gate times ($t_g$) from typical $\sim 1$ ms (weak driving) down to $19.3$ ”s for strongly coupled $^{13}$C spins.
  • Material Requirement: The success of this protocol relies on high-quality Single Crystal Diamond (SCD) with controlled isotopic purity, specifically the presence of hyperfine-coupled $^{13}$C nuclear spins (natural abundance is 1.1%).
  • Scalability: These results contribute directly to the development of scalable quantum registers in solids by enabling faster, more robust entangling operations.

The following hard data points were extracted from the analysis of the NV center system and the performance of the synchronized DDrf gate scheme.

ParameterValueUnitContext
Zero-Field Splitting ($D/2\pi$)2.88GHzSeparation of electronic spin levels ($m_s=0$ and $m_s=\pm 1$)
Reduced Electron Gyromagnetic Ratio ($\gamma_e$)14.00GHz/TUsed in Hamiltonian modeling
$^{13}$C Nuclear Gyromagnetic Ratio ($\gamma_n/2\pi$)10.705MHzUsed for Larmor precession period ($T_L$) calculation
Typical Static Magnetic Field ($B_z$)50 to 2000GRange used in recent experiments
Fastest $^{13}$C Gate Time ($t_g$)19.3”sAchieved in strong driving regime ($A_{
Weak Driving Gate Time ($t_g$)$\sim 1$msTypical gate time without synchronization protocol
Strong Driving Rabi Frequency ($B_1/2\pi$)361kHzRequired for $t_g \approx 19.3$ ”s
Maximum Average Gate Fidelity ($F_{avg}$)0.99999(Unitless)Achieved with $A_{
$^{13}$C Isotope Abundance1.1%Natural abundance in host diamond lattice

The core of the research involves implementing advanced pulse sequences and exploiting synchronization effects within the NV center’s hyperfine spectrum.

  1. DDrf Gate Scheme: Conditional entangling operations (C${\text{e}}$NOT${\text{n}}$) are achieved using a combination of Dynamical Decoupling (DD) pulses on the central electron spin and radio-frequency (rf) pulses on the coupled nuclear spin.
  2. Synchronization Protocol (Off-Resonant Error Suppression): The driving strength ($B_1$) is precisely chosen such that the Rabi frequencies of both the resonantly and off-resonantly driven transitions synchronize. This forces the Bloch vector of the unwanted transition to perform a $2\pi$ rotation during the gate time ($t_g$), effectively canceling the error.
    • Condition: $\Omega\tau = \sqrt{(A_{||}/2)^2 + (B_1/2)^2}\tau = m\pi$.
  3. Perpendicular Error Suppression: A second protocol is introduced to suppress errors caused by non-negligible perpendicular hyperfine tensor components ($A_{\perp}$) by carefully detuning the frequency of the driving field ($\omega$) relative to the targeted transition energy.
  4. Strong Driving Regime: By suppressing coherent errors, the protocols allow the system to operate in the strong driving regime ($B_1 \approx A_{||}$), leading to the observed microsecond-scale gate times, crucial for fault-tolerant quantum computation.

As an expert material scientist and technical sales engineer, 6CCVD recognizes that the success of these high-fidelity quantum operations is fundamentally dependent on the quality and precise engineering of the diamond substrate. We offer tailored solutions to meet the stringent demands of NV-based quantum computing research.

The research requires a host material that supports long-lived electron and nuclear spin coherence, necessitating ultra-high purity and precise isotopic control.

Research Requirement6CCVD Material SolutionTechnical Specification
High Coherence / Low NoiseOptical Grade Single Crystal Diamond (SCD)Ultra-low nitrogen concentration (< 1 ppb) to minimize decoherence from background spins.
Qubit Register FormationIsotopically Controlled SCDSupply of SCD with specific $^{13}$C concentrations (e.g., natural abundance 1.1% as used in the paper, or highly depleted < 0.1% for maximum $T_2^*$ coherence, or enriched for dense registers).
Strong Driving RegimeHigh Thermal Conductivity SCDHigh purity ensures superior thermal management, critical for handling the power dissipation associated with fast, strong rf/microwave pulses.

The integration of NV centers into functional quantum devices (e.g., coupling to optical cavities or waveguides) requires exceptional dimensional and surface control, capabilities where 6CCVD excels.

Customization ServiceRelevance to NV Quantum Research6CCVD Capability
Custom DimensionsRequired for integration into specific cryogenic or optical setups.Plates/wafers available up to 125mm (PCD) and custom SCD sizes.
Precision PolishingEssential for minimizing optical scattering losses and enabling high-fidelity optical initialization/readout.SCD polishing to Ra < 1 nm; Inch-size PCD polishing to Ra < 5 nm.
Thickness ControlNecessary for optimizing NV depth placement (e.g., near surface for sensing or deep for bulk coherence).SCD and PCD thickness control from 0.1 ”m up to 500 ”m.
Custom MetalizationRequired for fabricating on-chip microwave/rf antennas (e.g., coplanar waveguides) used to deliver the DDrf pulses ($B_1$).Internal capability for depositing Au, Pt, Pd, Ti, W, and Cu layers.

The complex interplay between hyperfine tensors ($A_{||}, A_{\perp}$), magnetic fields ($B_z$), and pulse sequences demands deep material and physics expertise.

6CCVD’s in-house PhD team specializes in MPCVD growth and post-processing optimization for quantum applications. We offer consultation services to assist researchers in:

  • Material Selection: Determining the optimal isotopic purity and defect concentration for specific [NV Center Quantum Computing] projects.
  • Surface Preparation: Tailoring surface termination and roughness to maintain high spin coherence near the diamond surface, crucial for integrated devices.
  • NV Creation: Advising on post-growth processing (e.g., implantation, annealing) to achieve desired NV density and depth profiles.

For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.

View Original Abstract

We consider entangling operations in a single nitrogen-vacancy center in diamond where the hyperfine-coupled nuclear spin qubits are addressed with radio frequency pulses conditioned on the state of the central electron spin. Limiting factors for the gate fidelity are coherent errors due to off-resonant driving of neighboring transitions in the dense, hyperfine-split energy spectrum of the defect and non-negligible perpendicular hyperfine tensor components that narrow the choice of 13C nuclear spin qubits. We address these issues by presenting protocols based on synchronization effects that allow for a complete suppression of both error sources in state-of-the-art CNOT gate schemes. This is possible by a suitable choice of parameter sets that incorporate the error into the scheme instead of avoiding it. These results contribute to the recent progress toward scalable quantum computation with defects in solids.