Control of the SiC Polytypes in SiC Bonded Diamond Materials
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2025-07-18 |
| Journal | Ceramics |
| Authors | Mathias Herrmann, Jesus Andres Quintana Freire, Björn Matthey, Steffen Kunze, Sören Höhn |
| Institutions | Fraunhofer Institute for Ceramic Technologies and Systems |
| Citations | 1 |
Abstract
Section titled âAbstractâSilicon carbide-bonded diamond materials produced by pressureless reaction infiltration of diamond preforms have high wear resistance and thermal conductivity, making them ideal for a range of industrial applications. During infiltration, the Si is typically converted to cubic ÎČ-SiC. The aim of the work was to investigate the extent to which the formation of hexagonal α-SiC can be achieved by adding α-SiC or AlN nuclei to the preform. Detailed microstructural investigations using XRD, high-resolution FE-SEM, and EBSD analyses show that both AlN and SiC serve as nuclei for α-SiC. Regardless of this, a large proportion of ÎČ-SiC forms on the surface of the diamonds. However, the added nuclei change the structure of the SiC framework that forms.
Tech Support
Section titled âTech SupportâOriginal Source
Section titled âOriginal SourceâReferences
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