Correction to - Surface properties of monocrystalline silicon in diamond wire electrical discharge combined sawing
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2025-03-01 |
| Journal | The International Journal of Advanced Manufacturing Technology |
| Authors | N. B. Zhang, Yufei Gao |
| Analysis | Full AI Review Included |
Technical Documentation & Analysis: Diamond Wire Electrical Discharge Combined Sawing
Section titled âTechnical Documentation & Analysis: Diamond Wire Electrical Discharge Combined SawingâThis document analyzes the requirements implied by the research on âSurface properties of monocrystalline silicon in diamond wire electrical discharge combined sawingâ and outlines how 6CCVDâs MPCVD diamond materials provide the necessary foundation for replicating and advancing this high-efficiency machining technology.
Executive Summary
Section titled âExecutive SummaryâThe research focuses on optimizing the high-precision slicing of hard materials (monocrystalline silicon) using a hybrid machining technique. 6CCVD provides the critical diamond components required for this demanding application.
- Application Focus: High-efficiency, low-damage slicing and machining of hard semiconductor materials (monocrystalline silicon).
- Core Technology: Diamond Wire Electrical Discharge Combined Sawing (DW-EDCS), which leverages the mechanical strength of diamond and the material removal efficiency of electrical discharge machining (EDM).
- Material Requirement: The process demands extremely high wear resistance, thermal stability, and mechanical toughness from the diamond abrasive material.
- 6CCVD Solution: We supply large-area Polycrystalline Diamond (PCD) plates and robust Single Crystal Diamond (SCD) films, ideal for manufacturing high-performance diamond wire tooling.
- Customization Advantage: 6CCVD offers custom thickness control (0.1”m to 500”m) and specialized metalization layers (e.g., Ti, W, Cu) crucial for bonding the diamond to the conductive wire substrate.
- Surface Integrity: Our advanced polishing capabilities ensure the diamond tooling material maintains the ultra-low surface roughness (Ra < 5 nm for PCD) necessary for precision tool fabrication.
Technical Specifications
Section titled âTechnical SpecificationsâThe following table summarizes the critical material specifications required for the diamond components used in high-performance DW-EDCS tooling, based on the demands of combined electrical and mechanical processing.
| Parameter | Value | Unit | Context |
|---|---|---|---|
| Required Diamond Type | PCD or Robust SCD | N/A | High mechanical strength and thermal stability for combined sawing. |
| Diamond Thickness Range | 0.1 - 500 | ”m | Applicable for thin film coatings or thick abrasive grains/plates. |
| Thermal Conductivity (SCD) | > 1800 | W/mK | Essential for rapid heat dissipation during electrical discharge events. |
| Polishing Specification (PCD) | Ra < 5 | nm | Required for high-precision tool fabrication and reduced friction. |
| Maximum Plate Size (PCD) | 125 | mm | Available for large-scale tool base or wire coating precursor material. |
| Required Metalization | Ti, W, Cu, Au | N/A | Necessary for strong adhesion and electrical contact between diamond and wire core. |
Key Methodologies
Section titled âKey MethodologiesâThe DW-EDCS process requires precise control over both the diamond material properties and the electrical discharge parameters. The methodology relies on the following steps:
- Diamond Material Selection: Choosing high-purity MPCVD diamond (PCD or SCD) optimized for extreme wear resistance and thermal shock stability.
- Tool Fabrication and Integration: Manufacturing the diamond wire by bonding or coating the diamond material onto a conductive core using specialized metalization layers (e.g., Ti/W/Cu for adhesion).
- Electrical Discharge Parameterization: Applying optimized voltage and pulse duration settings to the wire to maximize the material removal rate (MRR) in the monocrystalline silicon workpiece.
- Mechanical Abrasion Control: Simultaneously controlling the wire tension and feed rate to ensure efficient mechanical removal of material loosened by the electrical discharge.
- Surface Property Analysis: Post-sawing characterization of the silicon surface to measure key metrics such as surface roughness (Ra), subsurface damage depth, and micro-crack density.
6CCVD Solutions & Capabilities
Section titled â6CCVD Solutions & Capabilitiesâ6CCVD is uniquely positioned to supply the advanced MPCVD diamond materials necessary for developing and scaling Diamond Wire Electrical Discharge Combined Sawing technology.
Applicable Materials
Section titled âApplicable MaterialsâTo replicate or extend this research, engineers require diamond materials that offer superior thermal management and mechanical integrity:
- High-Toughness Polycrystalline Diamond (PCD): Ideal for large-scale tooling applications or as the precursor material for abrasive grains. We offer PCD plates up to 125 mm in diameter with thicknesses up to 500 ”m, providing excellent uniformity and thermal stability.
- Robust Single Crystal Diamond (SCD): Recommended for applications requiring the highest thermal conductivity (> 1800 W/mK) and lowest defect density, crucial for surviving intense localized electrical discharge heating.
- Boron-Doped Diamond (BDD): For applications where the diamond itself must act as a conductive electrode, 6CCVD offers custom BDD films with tailored resistivity.
Customization Potential
Section titled âCustomization PotentialâThe integration of diamond into a conductive wire system demands highly specific material preparation, which is a core 6CCVD capability:
| Service | 6CCVD Capability | Relevance to DW-EDCS |
|---|---|---|
| Custom Dimensions | Plates/wafers up to 125 mm (PCD). | Provides large feedstock for high-volume wire manufacturing. |
| Thickness Control | SCD and PCD films from 0.1 ”m to 500 ”m. | Allows precise control over the diamond coating thickness on the wire. |
| Metalization | In-house deposition of Au, Pt, Pd, Ti, W, Cu. | Essential for creating robust, conductive bonds between the diamond and the metal wire core. |
| Polishing | Ultra-low roughness: Ra < 1 nm (SCD), Ra < 5 nm (PCD). | Ensures the diamond surface is optimized for tool performance and minimal friction. |
| Shipping | Global DDU default, DDP available. | Reliable delivery of sensitive materials worldwide. |
Engineering Support
Section titled âEngineering Supportâ6CCVDâs in-house PhD team specializes in the material science of MPCVD diamond. We can assist with material selection for similar Advanced Slicing and Machining projects, focusing on optimizing diamond properties (crystallinity, doping, surface termination) to maximize tool life and efficiency in combined electrical discharge environments.
For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.