Research on Application of diamond MOSFET in DCDC converter
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2025-01-15 |
| Journal | Applied and Computational Engineering |
| Authors | Ruitong Gao |
| Institutions | Jilin University |
| Analysis | Full AI Review Included |
Technical Documentation & Analysis: Diamond MOSFETs for DCDC Converters
Section titled âTechnical Documentation & Analysis: Diamond MOSFETs for DCDC ConvertersâExecutive Summary
Section titled âExecutive SummaryâThis research paper validates the critical need for diamond semiconductor materials to overcome the inherent performance limitations of silicon, SiC, and GaN in high-performance DCDC converters. 6CCVD is uniquely positioned to supply the advanced MPCVD diamond required for this next generation of power electronics.
- Core Value Proposition: Diamond MOSFETs, leveraging a 5.47 eV band gap and superior thermal conductivity, are essential for achieving higher operating frequency, increased voltage tolerance, and greater efficiency in DCDC converters.
- Performance Benchmarks: Cited diamond devices demonstrate exceptional metrics, including breakdown voltages up to 3659 V and intrinsic transconductance reaching 650 mS/mm.
- Addressing Si Limitations: Diamondâs high breakdown electric field (up to 10x that of GaN) and high thermal conductivity enable operation in harsh environments (high temperature, high pressure) unsuitable for silicon.
- Material Challenge & Opportunity: The primary barrier to industrial adoption is the high cost and immaturity of large-scale, high-quality diamond growth and precise doping (especially N-type).
- 6CCVD Solution: We provide Electronic Grade Single Crystal Diamond (SCD) and large-area Polycrystalline Diamond (PCD) substrates (up to 125mm) necessary for both R&D and future industrial scaling of diamond power devices.
Technical Specifications
Section titled âTechnical SpecificationsâThe following data points highlight the superior material properties and device performance achieved using MPCVD diamond, validating its role as the âultimate semiconductorâ for DCDC applications.
| Parameter | Value | Unit | Context |
|---|---|---|---|
| Band Gap Width | 5.47 | eV | Pure Diamond Semiconductor |
| Breakdown Electric Field | 10x | - | Compared to GaN (Wider Band Gap) |
| Breakdown Electric Field | 3x | - | Compared to SiC |
| Insulation Strength | 33x | - | Compared to Silicon |
| Maximum Breakdown Voltage | 3659 | V | M. Kasu et al. (2020) Diamond MOSFET |
| Intrinsic Transconductance | 650 | mS/mm | D.A.J. Moran et al. (2011) Sub-100 nm gate SCD FET |
| Saturation Leakage Current | 290 | mA/mm | D.A.J. Moran et al. (2011) |
| Figure of Merit (FOM) | > 673 | V·mS/mm | USTC H-terminated device (2022) |
| High-Temperature Operation | 450 | °C | A. Daicho et al. (2014) (In vacuum) |
| Thermal Conductivity | Highest | W/m·K | Near Room Temperature (Approx. 2200 W/m·K) |
Key Methodologies
Section titled âKey MethodologiesâThe research reviewed emphasizes advanced material engineering and device fabrication techniques required to realize high-performance diamond MOSFETs suitable for DCDC converter integration.
- High-Quality Single Crystal Growth: Effective diameter expansion of Single Crystal Diamond (SCD) via CVD to achieve large-area substrates (e.g., 10mm side length cited) necessary for device scaling.
- Surface Termination for 2D Hole Gas: Utilizing hydrogen-terminated (H-terminated) diamond surfaces to create a highly conductive two-dimensional hole gas (2DHG) channel for high-mobility FETs.
- Gate Dielectric Integration: Deposition of high-k dielectric films (e.g., alumina, Al2O3) or MoO3 gate media to enable stable MOSFET operation and improve thermal stability (up to 200°C operating temperature).
- Advanced Doping Techniques: Development of novel methods for obtaining impurity elements and precise doping to achieve low-resistivity N-type diamond channels, a critical breakthrough for complementary circuits.
- Device Structure Optimization: Fabrication of sub-100 nm gate length devices and p-type doped MOSFETs on misoriented heteroepitaxial diamond substrates to maximize transconductance and current density.
- Circuit Simulation and Loss Analysis: Proposed use of tools like Simulink and Simscape Electrical to model the LLC resonant converter using diamond MOSFET parameters, focusing on reducing on-loss and switching loss.
6CCVD Solutions & Capabilities
Section titled â6CCVD Solutions & Capabilitiesâ6CCVD provides the foundational MPCVD diamond materials and customization services required to accelerate the transition of diamond MOSFETs from laboratory research to industrial DCDC converter applications.
| Research Requirement / Challenge | 6CCVD Solution & Capability | Applicable Materials |
|---|---|---|
| High-Performance SCD Substrates | We supply Electronic Grade SCD with ultra-low defect density, essential for maximizing breakdown voltage and carrier mobility (up to 500”m thick). | Electronic Grade SCD |
| Industrial Scaling & High Power Density | We offer Polycrystalline Diamond (PCD) wafers up to 125mm in diameter, providing the highest thermal spreading capability for large-scale power modules. | High Purity PCD (Up to 125mm) |
| Low-Resistivity Doping (P-type/N-type) | Our CVD process allows for precise, heavy Boron Doping (BDD) for stable P-type channels. We support R&D efforts requiring specific doping profiles for N-type breakthroughs. | Boron-Doped Diamond (BDD) |
| Gate & Ohmic Contact Integration | We offer internal, custom metalization services, including deposition of Au, Pt, Pd, Ti, W, and Cu, critical for forming stable, low-resistance ohmic contacts and gate stacks. | SCD/PCD with Custom Metalization |
| Surface Quality for H-Termination | We guarantee superior surface finishes, achieving Ra < 1nm on SCD and Ra < 5nm on inch-size PCD, minimizing interface scattering losses. | Polished SCD (Ra < 1nm) |
| Custom Device Dimensions | We provide custom thickness (0.1”m to 500”m) and precise laser cutting services to match specific DCDC converter circuit topologies and packaging requirements. | Custom Dimensions & Thickness |
Engineering Support
Section titled âEngineering SupportâThe paper highlights the need for researchers to focus on material growth, device fabrication, and drive circuit redesign. 6CCVD supports these efforts by providing:
- Material Consultation: Our in-house PhD team offers expert guidance on selecting the optimal diamond material (SCD vs. PCD, doping level, orientation) to meet the specific requirements of high-frequency, high-voltage MOSFET projects.
- Global Supply Chain: We ensure reliable, DDU (Delivery Duty Unpaid) default global shipping, with DDP (Delivery Duty Paid) options available, streamlining the supply chain for international research groups.
For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.
View Original Abstract
This paper focuses on the industrial application of diamond power devices and DCDC converters, carries out the application research of diamond MOSFET in DCDC converters, analyzes the limitations of current silicon-based DCDC converters and how diamond MOSFET should make up for this limitation. This paper summarizes the research on the practical application of diamond power devices at home and abroad and points out that there is a gap in the application of diamond MOSFETs in DCDC converters. Diamond has the advantages of a large band gap, high carrier mobility, high temperature and high pressure resistance, so the application of diamond MOSFET in a DCDC converter can improve its operating frequency, input and output voltage and efficiency. This paper also discusses the difficulties encountered by diamond semiconductor materials and diamond power devices in the research and industrial fields, as well as the research status of diamond semiconductor materials at home and abroad, and gives the research method for the future application of diamond MOSFET in DCDC converters. The study can use the analogy of applying SiC or GaN to DCDC converters improving their performance, and redesigning the drive circuit to match the limiting performance of diamond power devices. By applying diamond MOSFET into the DCDC converter, its operating voltage, operating frequency, output power and efficiency will be greatly improved.