Surface Gate-Defined Quantum Dots in MoS2 with Bi Contacts
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2024-08-08 |
| Journal | Journal of the Physical Society of Japan |
| Authors | Riku Tataka, Alka Sharma, Motoya Shinozaki, Tomoya Johmen, Takeshi Kumasaka |
| Institutions | Advanced Institute of Materials Science, Tohoku University |
Abstract
Section titled āAbstractāTransition-metal dichalcogenides (TMDCs) are promising materials for nano and quantum devices, with performance dependent on electrical contacts and gate electrodes at cryogenic temperatures. In this study, we utilized semimetal bismuth as the contact metal to fabricate two types of devices based on MoS<sub>2</sub>-Bi: field-effect transistors (FETs) and quantum dot devices. We observed linear current-voltage characteristics in the FET devices at temperatures of 4.2 and 0.4 K, within the range of ā0.03 to 0.03 V, essential for quantum devices. For the MoS<sub>2</sub> quantum dot device, we utilized intrinsic Schottky barriers between MoS<sub>2</sub> and gold as gate electrodes to form and control the quantum dots. Coulomb diamonds were observed in the MoS<sub>2</sub> devices at temperature of 0.4 K, with extracted parameters matching our device design. Our simplified fabrication process eliminates the need for additional fabricate gate insulators steps, enhancing design flexibility and fabrication possibilities for advanced quantum devices, including vertically integrated systems.