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6CCVD Research

Thermal dissipation in stacked devices

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2023-12-09
AuthorsWei‐Yen Woon, Sam Vaziri, Chih‐Cheng Shih, I. Datye, Mohamadali Malakoutian
InstitutionsStanford University, Taiwan Semiconductor Manufacturing Company (Taiwan)
Citations9

Abstract

Section titled “Abstract”

In this paper, we present thermal dissipation challenges in three dimensional (3D) stacked devices and discuss strategies to tackle these issues through innovations in materials, integrations, and designs. Back-end-of-line (BEOL) compatible aluminum nitride (AlN) and diamond are evaluated and found to be promising dielectric materials to improve thermal dissipation in 3D stacked devices. Insertion of phonon dispersion matched bridging layers is proposed to solve the thermal boundary resistance issue. We also propose a manufacturing compatible in-line metrology for monitoring the thermal conductivity (Îș) and heat dissipation characteristics.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

References

Section titled “References”
  1. 2009 - 3D System Integration
  2. **** - IEEE ECTC
  3. **** - IEDM
  4. **** - IEDM

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