On Extracting the Maximum Power Density at High Frequencies from Gallium Nitride and Related Materials

At a Glance

Metadata	Details
Publication Date	2023-10-16
Authors	Mohamadali Malakoutian, Srabanti Chowdhury
Institutions	Stanford University
Citations	1

Abstract

The demand for higher power density in electronic applications has made Gallium Nitride HEMT technology a front-runner in both power and RF applications due to its exceptional material properties. However, to fully unleash GaN’s potential, thermal management is crucial to address the issue of severe Joule heating causing performance degradation and premature failure. A potential solution lies in integrating diamond, known for its excellent thermal properties, with GaN HEMTs. Although diamond growth on GaN has been challenging, a recent breakthrough in our group has demonstrated successful diamond-on-GaN integration using a low-temperature growth process <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$(\sim 400^{\circ}\mathrm{C})$</tex> . The integrated diamond films showed high thermal conductivity (300 W/m/K) and phase purity (97%), resulting in significantly reduced peak temperature in GaN HEMT channel by <tex xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>$&gt; 100^{\circ}\mathrm{C}$</tex> during operation at 20 W/ mm. This advancement opens up new possibilities for improving the efficiency and performance of GaN-based electronics.

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Original Source

DOI: https://doi.org/10.1109/bcicts54660.2023.10310817

References

2017 - IEEE International Reliability Physics Symposium Proceedings
2021 - 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications