Diamond RF Diodes Towards High Power Applications
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2023-10-29 |
| Authors | Jose Andres Orozco, J.M. Brown, Anna Zaniewski, Manpuneet Benipal, R. J. Nemanich |
| Institutions | Arizona State University, Diamond Materials (United States) |
Abstract
Section titled “Abstract”Favorable material properties such as extreme thermal conductivity, high input power attenuation, low on resistance and high reliability make diamond among the most promising materials for high power RF applications such as limiter/receiver protector systems. RF diodes are the core component in receiver protector systems. To meet the needs of this application, we demonstrate successful diamond-based RF diode fabrication, starting with plasma enhanced chemical vapor deposition growth of p-i-n layers on <100> diamond substrates, microfabrication, and RF characterization. Diode characterization is conducted from dc to 25 GHz with results closely matching RF diode structures fabricated on <111> diamond substrates. Compared to previous <111> devices, we show off-capacitance and small signal resistance values as low as 16.1•10 <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>-9</sup> F/cm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sup> and 0.65•10 <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>-3</sup> Ohm•cm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</sup> as well as additional pathways for further reducing these values and enabling receiver protector circuits with higher power handling requirements.