Research progress of optoelectronic devices based on diamond materials

At a Glance

Metadata	Details
Publication Date	2023-08-10
Journal	Frontiers in Physics
Authors	Houzhi Fei, Dandan Sang, Liangrui Zou, Shunhao Ge, Yu Yao
Institutions	Beijing University of Chemical Technology, Liaocheng University
Citations	8
Analysis	Full AI Review Included

Research Progress of Optoelectronic Devices Based on Diamond Materials: 6CCVD Technical Analysis

Executive Summary

This review highlights diamond’s status as the ultimate material for next-generation optoelectronic devices operating in harsh environments, driven by its unique combination of electrical, thermal, and optical properties.

Superior Material Properties: Diamond exhibits an ultra-wide bandgap (5.47 eV), extremely high thermal conductivity (2200 W/mK), and a high breakdown field (10 MV/cm), making it ideal for high-power, high-frequency, and deep-UV applications.
High-Performance Transistors: H-terminated diamond FETs demonstrate exceptional performance, achieving maximum drain-source current densities of -83.8 mA/mm and maximum oscillation frequencies up to 120 GHz.
Advanced Sensing and Detection: Diamond is critical for UV detectors (achieving responsivity up to 275.9 A W^-1 at 213 nm), high-resolution biosensors, and robust pressure sensors capable of operating up to 6.8 MPa.
Quantum Technology Foundation: Nitrogen-Vacancy (NV) centers in high-purity Single Crystal Diamond (SCD) are confirmed as leading candidates for quantum memory and highly sensitive magnetic sensors.
Fabrication Requirements: Successful device fabrication relies heavily on precise MPCVD growth, controlled doping (Boron, Nitrogen), and advanced surface engineering techniques (H-termination, custom metalization).
Commercialization Pathway: The research confirms that overcoming limitations in conductivity and defect density requires high-quality synthetic diamond materials, which 6CCVD is uniquely positioned to supply.

Technical Specifications

The following critical performance metrics and material parameters were extracted from the review, demonstrating diamond’s suitability for extreme optoelectronic applications.

Parameter	Value	Unit	Context
Wide Bandgap	5.47	eV	Ideal for deep ultraviolet (UV) detection
Thermal Conductivity	2200	W/mK	Essential for high-power LEDs and transistors
Breakdown Field Strength	10	MV/cm	High-power electronic devices
Exciton Binding Energy	80	meV	Important for UV and high-energy particle detectors
H-FET Max Current Density (I_Dmax)	-83.8	mA/mm	H-terminated FET output characteristics
H-FET Power Density	3.8	W/mm	High-power transistor performance
H-FET Max Oscillation Frequency	120	GHz	High-frequency operation
Deep UV Detector Responsivity	275.9	A W^-1	Under 213 nm illumination (high gain)
Pressure Sensor Operating Range	0 - 6.8	MPa	Fabry-Perot pressure sensors based on diamond membranes
Optimal Annealing Temperature (EFE)	900 - 1,000	°C	Improved Field Emission Efficiency (EFE) in UNCD films

Key Methodologies

The research reviewed relies on sophisticated material synthesis and modification techniques, primarily centered around MPCVD growth and subsequent surface engineering.

Microwave Plasma Chemical Vapor Deposition (MPCVD): The foundational technique used for growing high-quality Single Crystal Diamond (SCD), Polycrystalline Diamond (PCD), and Ultra Nanocrystalline Diamond (UNCD) films required for all reviewed applications (LEDs, FETs, Sensors).
Controlled Doping:
- Boron Doping (B): Used to achieve p-type conductivity (BDD, BMD, BND) for p-i-n junctions, field emitters, and biosensors.
- Nitrogen Doping (N): Essential for creating Nitrogen-Vacancy (NV) centers, the core component for quantum sensing and memory applications.
Surface Termination: Hydrogen (H-termination) is critical for inducing the two-dimensional hole gas (2DHG) necessary for high-performance, normally-off diamond Field-Effect Transistors (FETs).
Metalization and Contact Engineering: DC magnetron sputtering is used to deposit thin metal layers (e.g., Ti, Al, Mo, Ni) to optimize metal-semiconductor contacts, reduce the effective work function, and enhance field emission properties.
Thermal Processing: Low-pressure annealing (up to 1,200°C) is employed to modify the microstructure, reduce sp² defects, and improve the electron field emission (EFE) characteristics of UNCD films.
Micro- and Nanofabrication: Techniques such as selective chemical etching (for pressure sensor membranes) and femtosecond laser micromachining (for integrated photonic waveguides) are used to create complex device structures.

6CCVD Solutions & Capabilities

6CCVD is the ideal partner for researchers and engineers seeking to replicate or advance the breakthroughs detailed in this review. Our specialized MPCVD growth and advanced processing capabilities directly address the material requirements for next-generation diamond optoelectronics.

Applicable Materials

To achieve the high performance demonstrated in the research, 6CCVD recommends the following materials from our catalog:

Optical Grade Single Crystal Diamond (SCD): Required for high-purity applications like Quantum Memory (NV Centers) and Deep UV Detectors. Our SCD offers Ra < 1nm polishing, minimizing scattering loss and maximizing coherence time.
Boron-Doped Diamond (BDD): Essential for achieving the p-type conductivity needed for p-i-n UV Detectors and Biosensors. We offer precise, controlled doping levels for optimal junction formation and electrical resistivity.
High Thermal Conductivity Polycrystalline Diamond (PCD): Ideal for High-Power LEDs and Transistor Substrates (up to 10mm thick). Our PCD wafers, available up to 125mm in diameter, ensure superior heat spreading (2200 W/mK) crucial for managing thermal loads in high-frequency devices.
Custom SCD/PCD Thin Films: Available in thicknesses from 0.1 µm to 500 µm, perfect for fabricating Micro-Membranes (pressure sensors) and thin-film FET channels.

Customization Potential

The reviewed research emphasizes the necessity of tailored material interfaces and geometries. 6CCVD provides comprehensive customization services to meet these demands:

Research Requirement	6CCVD Custom Capability	Application Focus
Custom Metal-Semiconductor Contacts	In-house metalization services (Au, Pt, Pd, Ti, W, Cu) to replicate and optimize interfaces for low work function and enhanced field emission (e.g., Ti/diamond composite films).	Field Emission, Transistors
Large Area Substrates	Plates and wafers available up to 125mm (PCD) and custom dimensions for SCD, enabling scalable manufacturing of LED heat spreaders and UV detector arrays.	High-Power LEDs, UV Detectors
Surface Termination Control	Expert engineering support for achieving precise Hydrogen (H-) termination or Oxygen (O-) termination necessary for 2DHG FETs and biosensors.	Transistors, Biosensors
Precision Polishing	Ultra-smooth polishing (Ra < 1nm for SCD, < 5nm for inch-size PCD) required for integrated Photonic Waveguides and high-quality optical interfaces.	Quantum Photonics, Sensors
Complex Geometries	Advanced laser cutting and shaping services for creating custom microstructures, such as the diamond membranes used in Fabry-Perot pressure sensors.	MEMS/Sensors

Engineering Support

The complexity of diamond-based optoelectronics, particularly concerning doping, defect control, and surface termination, requires specialized expertise. 6CCVD’s in-house PhD-level engineering team offers consultation and support for projects involving:

Material Selection: Guidance on choosing the optimal diamond grade (SCD vs. PCD, doping level) for specific High-Frequency Transistor or Deep UV Detection projects.
Process Optimization: Assistance in defining growth parameters and post-processing steps (e.g., annealing recipes) to maximize device performance metrics like breakdown voltage and current density.
Global Logistics: Reliable global shipping (DDU default, DDP available) ensures prompt delivery of sensitive materials worldwide.

For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.

View Original Abstract

Diamond has a variety of unique characteristics, including integrates mechanics, electricity, heat, optics and other excellent properties, so that it is widely focus on the field of high and new technology, especially in the optoelectronic technology. Because diamond has the characteristics of high thermal conductivity, high breakdown field (10 mV/cm), high electron and hole mobility, it has a wide application prospect in high temperature, high power and high frequency photoelectric equipment. The wide bandgap (5.47 eV) makes diamond an ideal material in ultraviolet detectors (UV). Its high carrier mobility and breakdown field strength make it an ideal choice for field emission materials, which are expected to be used in high-power electronic devices in the next few years. At the same time, in addition to high hardness, it also has various of excellent physical properties, such as low coefficient of thermal expansion, low coefficient of friction, high acoustic propagation speed and high optical transmittance, so that it has broad application prospects in many fields such as machining, microelectronic devices, optical windows and surface coatings. In addition, diamond also has a high exciton binding energy (80 meV), which plays an important development in deep ultraviolet and high-energy particle detectors. In this article, the latest progress in the application of diamond-based optoelectronic devices is reviewed. A variety of advanced devices and physical phenomena are considered, for example, sensors, transistors, memory, Light-emitting diode (LEDs), ultraviolet detectors and field emission. This review will provide a new idea to promote the development of photoelectric applications based on diamond structure.

Tech Support

Original Source

DOI: https://doi.org/10.3389/fphy.2023.1226374

References

2020 - A hybrid self-aligned MIS-MESFET architecture for improved diamond-based transistors [Crossref]
2019 - High performance β-Ga2O3 nano-membrane field effect transistors on a high thermal conductivity diamond substrate [Crossref]
2016 - Towards a spin-ensemble quantum memory for superconducting qubits [Crossref]
2019 - Doped nanocrystalline diamond films as reflective layers for fiber-optic sensors of refractive index of liquids [Crossref]
2010 - Diamond islands wafer for super LED manufacture [Crossref]
2021 - Effect of different metal composite layer on field emission properties of diamond film [Crossref]
2020 - Enhanced responsivity of diamond UV detector based on regrown lens structure [Crossref]
2012 - Superior field emissions from boron-doped nanocrystalline diamond compared to boron-doped microcrystalline diamond [Crossref]
2010 - Enhanced field emission from ZnO nanoneedles on chemical vapour deposited diamond films [Crossref]
2019 - Conduction mechanisms and voltage drop during field electron emission from diamond needles [Crossref]