Enhanced spectral density of a single germanium vacancy center in a nanodiamond by cavity integration
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2023-07-10 |
| Journal | Applied Physics Letters |
| Authors | Florian Feuchtmayr, Robert Berghaus, Selene Sachero, Gregor Bayer, Niklas Lettner |
| Institutions | Université de Tours, Centre National de la Recherche Scientifique |
| Citations | 15 |
| Analysis | Full AI Review Included |
Enhanced Spectral Density of a Single Germanium Vacancy Center in a Nanodiamond by Cavity-Integration
Section titled âEnhanced Spectral Density of a Single Germanium Vacancy Center in a Nanodiamond by Cavity-IntegrationâAnalysis by 6CCVD: Expert MPCVD Diamond Solutions
This research successfully demonstrates a critical step toward scalable quantum networks by integrating a single Germanium Vacancy (GeV-) center nanodiamond into a high-finesse Fabry-Pérot (FP) microcavity. The achievement of a 48-fold Spectral Density Enhancement (SDE) confirms the viability of this robust, passively stable platform for efficient spin-photon interfaces.
Executive Summary
Section titled âExecutive Summaryâ- Core Achievement: Successful integration of a single GeV- center nanodiamond (ND) into an open, tunable Fabry-PĂ©rot microcavity using Atomic Force Microscope (AFM) nanomanipulation.
- Performance Metric: Achieved a significant 48-fold Spectral Density Enhancement (SDE) of the GeV- emission at room temperature.
- Optical Quality: The assembled cavity maintained a high optical quality, demonstrating a finesse of F = 7,700.
- Single Photon Purity: The GeV- center proved to be a high-purity single photon source, confirmed by strong anti-bunching (g(2)(0) = 0.11 ± 0.04).
- Methodology: Utilized a precise âpick and placeâ technique to align the 200 nm ND intrinsically with the cavity field, reducing technical overhead.
- Future Potential: The platform is robust and stable, offering a promising path for extension to cryogenic temperatures to achieve higher Purcell factors (P > 50) and establish an efficient spin-photon quantum interface.
Technical Specifications
Section titled âTechnical Specificationsâ| Parameter | Value | Unit | Context |
|---|---|---|---|
| Spectral Density Enhancement (SDE) | 48 ± 20 | Fold | Cavity vs. Free Space Emitter |
| Cavity Finesse (F) | 7,700 ± 1,800 | N/A | Achieved with ND integrated |
| Quality Factor (QCav) | 260,000 ± 60,000 | N/A | Calculated for the cavity |
| Second-Order Correlation (g(2)(0)) | 0.11 ± 0.04 | N/A | Single Photon Source Purity |
| ZPL Wavelength (ND in Cavity) | 599.25 ± 0.03 | nm | Zero Phonon Line |
| ZPL FWHM (ND in Cavity) | 1.10 ± 0.04 | nm | Spectral linewidth |
| Excited State Lifetime (ÏLT) | 2.53 ± 0.20 | ns | Free space measurement |
| Mode Volume (V) | 140 ± 40 | ”m3 | Calculated effective mode volume |
| Corrected Purcell Factor (P*) | 0.28 ± 0.03 | N/A | Calculated for room temperature operation |
| Nanodiamond Size (Transferred) | 190 x 180 x 130 | nm | Dimensions of the integrated ND |
Key Methodologies
Section titled âKey Methodologiesâ- Diamond Synthesis: Germanium-doped nanodiamonds (NDs) were grown via High Pressure High Temperature (HPHT) synthesis under extreme conditions (1,450°C and 8 GPa).
- Doping: Germanium Vacancy (GeV-) centers were incorporated using Germanium triphenyl-chloride (GeC18H15Cl) as the doping component.
- Cavity Mirror Fabrication: The concave mirror was fabricated by CO2 laser ablation of a SiO2 substrate, followed by the deposition of a Distributed Bragg Reflector (DBR) coating (minimum transmission T < 310 ppm at 601 nm).
- Emitter Identification: Confocal microscopy (532 nm excitation) was used to identify single GeV- centers with narrow ZPL emission and strong anti-bunching (g(2)(0) = 0.11).
- Nanomanipulation: An Atomic Force Microscope (AFM) was used in a âpick and placeâ technique to transfer the pre-characterized 200 nm ND precisely into the center of the curved mirror structure.
- Cavity Characterization: The assembled FP cavity was characterized via reflection signals to determine finesse and quality factor, and photoluminescence (PL) measurements were performed under off-resonant excitation (587.8 nm) to quantify SDE.
6CCVD Solutions & Capabilities
Section titled â6CCVD Solutions & CapabilitiesâThis research highlights the critical need for high-quality diamond materials and precise geometric control to realize robust quantum optical devices. 6CCVD specializes in providing the foundational MPCVD diamond substrates necessary to replicate and advance this work, particularly by transitioning from nanodiamonds to high-purity Single Crystal Diamond (SCD) membranes for enhanced stability and coherence at cryogenic temperatures.
| Research Requirement | 6CCVD Solution & Capability | Technical Advantage |
|---|---|---|
| Applicable Materials | Optical Grade SCD (0.1”m - 500”m thickness) | Provides superior crystalline quality and reduced strain compared to NDs, essential for achieving the Fourier Transform (FT) limit and maximizing the Purcell effect (P > 50) required for efficient quantum repeaters. |
| Custom Dimensions | SCD Plates/Wafers up to 125mm; Custom Laser Cutting | Enables the fabrication of large-area, high-uniformity SCD membranes (0.1”m to 500”m) suitable for direct integration into FP cavities or for creating robust photonic crystal waveguides (as referenced in the paper). |
| Surface Quality | Ultra-Low Roughness Polishing (Ra < 1nm for SCD) | Ensures minimal scattering losses when integrating the diamond surface directly into the optical resonator, crucial for maintaining high cavity finesse (F = 7,700). |
| Customization Potential | In-House Metalization (Ti, Pt, Au, Pd, W, Cu) | We offer custom metal deposition services, allowing researchers to apply precise metal contacts for potential electrical gating experiments or for creating integrated mirror structures directly on the diamond surface. |
| Advanced Doping | High-Purity SCD for Post-Growth Implantation | While the paper uses HPHT GeV- NDs, 6CCVD supplies the ideal low-strain SCD host material for precise, controlled ion implantation of Group IV centers (SiV, GeV, SnV) necessary for scalable quantum device manufacturing. |
| Engineering Support | In-House PhD Team Consultation | 6CCVDâs material scientists can assist with material selection, thickness optimization, and surface preparation protocols for similar Quantum Repeater Node or Spin-Photon Interface projects. |
For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.
View Original Abstract
Color centers in diamond, among them the negatively charged germanium vacancy (GeVâ), are promising candidates for many applications of quantum optics, such as a quantum network. For efficient implementation, the optical transitions need to be coupled to a single optical mode. Here, we demonstrate the transfer of a nanodiamond containing a single ingrown GeVâ center with excellent optical properties to an open Fabry-PĂ©rot microcavity by nanomanipulation utilizing an atomic force microscope. Coupling of the GeVâ defect to the cavity mode is achieved, while the optical resonator maintains a high finesse of F=7700, and a 48-fold spectral density enhancement is observed. This article demonstrates the integration of a GeVâ defect with a Fabry-PĂ©rot microcavity under ambient conditions with the potential to extend the experiments to cryogenic temperatures toward an efficient spin-photon platform.
Tech Support
Section titled âTech SupportâOriginal Source
Section titled âOriginal SourceâReferences
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