The Application Status of the Third Generation of Semiconductor Materials in the FIeld of Electric Power
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2023-06-30 |
| Journal | Highlights in Science Engineering and Technology |
| Authors | Wenkai Zhao |
| Citations | 4 |
| Analysis | Full AI Review Included |
Technical Documentation & Analysis: Third Generation Semiconductor Applications
Section titled âTechnical Documentation & Analysis: Third Generation Semiconductor ApplicationsâSource Paper: The Application Status of the Third Generation of Semiconductor Materials in the Field of Electric Power (Zhao, 2023)
Executive Summary
Section titled âExecutive SummaryâThe attached research paper validates diamondâs position as the ultimate third-generation semiconductor material, possessing properties far exceeding SiC and GaN for extreme power, frequency, and thermal applications.
- Superior Material Properties: Diamond (5.5eV bandgap) exhibits the highest thermal conductivity (up to 15x GaN) and the highest electron/hole mobility among all wide-bandgap materials.
- Extreme Voltage Handling: Diamondâs breakdown electric field is 3 to 4 times greater than SiC and 10 times greater than GaN, enabling unprecedented high-voltage and high-power density devices.
- Target Applications: Diamond is essential for high-power microwave devices, advanced optoelectronics (UV detection, lasers), and robust power electronics operating in high-temperature or strong radiation environments.
- Technical Pathways: The paper highlights two critical pathways for industrialization: high-purity epitaxial Single Crystal Diamond (SCD) films and Polycrystalline Diamond (PCD) films on non-diamond substrates.
- 6CCVD Solution: 6CCVD specializes in providing the necessary high-purity MPCVD SCD and large-area PCD substrates, along with custom doping (BDD) and metalization, directly addressing the material preparation challenges cited in the research.
- Strategic Importance: Diamond materials are crucial for seizing the strategic commanding heights in next-generation information technology, energy conservation, and national defense.
Technical Specifications
Section titled âTechnical SpecificationsâThe following table extracts key comparative performance metrics for diamond relative to other third-generation semiconductors, as detailed in the analysis.
| Parameter | Value | Unit | Context |
|---|---|---|---|
| Diamond Bandgap | 5.5 | eV | Wide bandgap material |
| Thermal Conductivity (vs GaN) | 15 | Times | Highest thermal performance for heat sinking |
| Thermal Conductivity (vs SiC) | 4 | Times | Superior heat dissipation capability |
| Breakdown Electric Field (vs GaN) | 10 | Times | Enables extreme high-voltage devices |
| Breakdown Electric Field (vs SiC) | 3 to 4 | Times | Superior voltage handling capability |
| Electron/Hole Mobility | Highest | N/A | Highest among wide-bandgap materials |
| Si/GaAs Operating Limit | < 200 | °C | Diamond enables stable operation at much higher temperatures |
| SiC Target Application Voltage | > 1200 | V | High-power systems (EV, solar, wind power) |
| GaN Target Application Voltage | 40 to 1200 | V | High-frequency systems (5G, fast chargers) |
Key Methodologies
Section titled âKey MethodologiesâThe research identifies two primary technical pathways necessary for the industrialization and application of diamond thin-film semiconductors in power and microwave electronics.
-
Epitaxial Growth of Doped Single Crystal Diamond (SCD) Film:
- Focuses on homogeneous epitaxy (growing diamond on diamond).
- Required for high-performance devices where crystal quality and purity are paramount (e.g., high-power microwave solid devices).
- Challenge cited: Difficulty in preparing high-purity SCD films and achieving high-quality heteroepitaxy (e.g., on cubic boron nitride).
-
Growth of Polycrystalline Diamond (PCD) Semiconductor Film:
- Involves growing PCD films on non-diamond substrates.
- Application direction is primarily in traditional semiconductor devices that require operation under harsh conditions (high temperature, high voltage, high frequency, strong radiation).
- Challenge cited: Design, production, and packaging technology for diamond semiconductor devices still require significant development.
6CCVD Solutions & Capabilities
Section titled â6CCVD Solutions & Capabilitiesâ6CCVD is uniquely positioned to supply the advanced MPCVD diamond materials required to overcome the technical and economic challenges identified in this research, accelerating the development of diamond-based power and optoelectronic devices.
Applicable Materials
Section titled âApplicable Materialsâ| Application Requirement (Zhao, 2023) | 6CCVD Material Recommendation | Technical Specification |
|---|---|---|
| High-Purity Epitaxial Films | Optical Grade SCD | SCD plates up to 10x10mm; Ra < 1nm polishing; ideal for homogeneous epitaxy and high-sensitivity UV detectors. |
| High-Power Thermal Management | High-Thermal PCD Substrates | PCD wafers up to 125mm diameter; highest thermal conductivity for heat spreading in GaN/SiC power modules. Polishing to Ra < 5nm. |
| Conductive Layers / Active Devices | Boron-Doped Diamond (BDD) | Custom BDD films and substrates for creating p-type conductive layers, essential for high-voltage power switches and electrochemical sensors. |
| Microwave & RF Devices | Electronic Grade SCD | Low nitrogen content SCD films, optimized for high-frequency, high-power microwave solid devices where low loss is critical. |
Customization Potential
Section titled âCustomization PotentialâThe development of diamond devices requires precise control over material dimensions, thickness, and integration layers. 6CCVD offers full customization to meet research and industrial prototyping needs:
- Custom Dimensions: We supply PCD wafers up to 125mm (5 inches) and SCD plates cut to custom specifications, supporting non-standard device geometries.
- Thickness Control: Precise control over film thickness is critical for device performance. We offer SCD and PCD films ranging from 0.1”m (thin films for epitaxy) up to 500”m, and substrates up to 10mm thick.
- Advanced Metalization: To facilitate device integration and packagingâa key challenge cited in the paperâ6CCVD provides in-house metalization services, including deposition of Au, Pt, Pd, Ti, W, and Cu contacts. This capability is essential for creating reliable ohmic contacts on diamond power devices.
- Ultra-Low Roughness Polishing: We achieve surface roughness (Ra) < 1nm for SCD and < 5nm for inch-size PCD, ensuring optimal surface quality for subsequent epitaxial growth or thin-film deposition.
Engineering Support
Section titled âEngineering Supportâ6CCVDâs in-house PhD team specializes in MPCVD diamond growth and material characterization. We offer expert consultation to researchers and engineers tackling the complex challenges of high-purity film preparation, heterogeneous epitaxy, and device packaging for high-power microwave and optoelectronic projects.
For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.
View Original Abstract
With the vigorous development of semiconductor materials, the third generation of semiconductors represented by SiC, GaN, and diamond have gradually become the mainstream materials of modern semiconductors, and this paper introduces the application of SiC, GaN, and diamond, respectively, and analyzes their existing properties. The advantages and disadvantages of each are drawn in more detail.