The 36th International Symposium on Power Semiconductor Devices and ICs
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2023-05-28 |
| Authors | |
| Analysis | Full AI Review Included |
Technical Documentation & Analysis: ISPSD 2024 Call for Papers
Section titled âTechnical Documentation & Analysis: ISPSD 2024 Call for PapersâExecutive Summary
Section titled âExecutive Summaryâ- Strategic Focus: The ISPSD 2024 conference explicitly targets diamond-based power devices within the âSiC and Other Materialsâ track, confirming diamondâs critical role in next-generation power electronics.
- Core Application: Research is centered on High Voltage (HV, > 200 V) and Low Voltage (LVT, †200 V) discrete devices and integrated circuits, areas where diamondâs superior thermal management and breakdown field are essential.
- 6CCVD Material Relevance: 6CCVD provides the necessary MPCVD diamond materialsâSingle Crystal Diamond (SCD) for active device layers and Polycrystalline Diamond (PCD) for large-area substrates and thermal management.
- Customization Advantage: We offer custom dimensions up to 125mm (PCD) and precise thickness control (0.1”m to 500”m), enabling researchers to meet specific device fabrication requirements.
- Integration Support: 6CCVD specializes in advanced surface preparation (Ra < 1nm) and custom metalization (Au, Pt, Ti, W, Cu) crucial for successful device integration and packaging (PK track).
Technical Specifications
Section titled âTechnical SpecificationsâThe following table summarizes the key performance targets and submission requirements relevant to diamond-based power device research presented at ISPSD 2024.
| Parameter | Value | Unit | Context |
|---|---|---|---|
| High Voltage (HV) Threshold | > 200 | V | Minimum operating voltage for discrete power devices (e.g., MOSFETs, IGBTs) |
| Low Voltage (LVT) Threshold | <= 200 | V | Maximum operating voltage for LVT devices and power ICs |
| Primary Wide Bandgap Focus | Diamond, SiC, GaâOâ | N/A | Materials targeted for high-performance power devices (SiC Track) |
| Abstract Text Limit | 500 | words | Maximum length for the single-page text summary |
| Supporting Figures Limit | Up to 2 | pages | Maximum additional pages for supporting data and figures |
| Conference Date | 2-6 June 2024 | N/A | Event date in Bremen, Germany |
Key Methodologies
Section titled âKey MethodologiesâThe ISPSD 2024 conference tracks define the critical research methodologies and application areas driving the demand for advanced materials like MPCVD diamond:
- High Voltage Device Engineering (HV): Focus on designing and fabricating discrete devices (> 200 V) utilizing diamondâs high breakdown field to achieve superior performance compared to silicon-based alternatives.
- Power IC Technology (LVT/ICD): Developing low voltage (†200 V) power devices and integrated circuits, requiring high-quality diamond films for active layers or as highly efficient thermal substrates.
- Compound Material Processing (GaN/SiC): Investigating the fundamental materials science, processing, and integration techniques for ultra-wide bandgap materials, specifically including diamond, SiC, and GaâOâ.
- Device Integration and Packaging (PK): Research into advanced module and package technologies, where diamondâs extreme thermal conductivity is leveraged for heat spreading and reliability in high-power density systems.
- Surface and Interface Optimization: Developing robust metalization schemes and surface treatments necessary for creating reliable ohmic and Schottky contacts on wide bandgap materials like diamond.
6CCVD Solutions & Capabilities
Section titled â6CCVD Solutions & Capabilitiesâ6CCVD is uniquely positioned to supply the high-quality MPCVD diamond materials required to replicate and advance the research presented at ISPSD 2024, particularly within the SiC and PK tracks.
Applicable Materials
Section titled âApplicable Materialsâ| Material Type | Description | Application Relevance (ISPSD Track) |
|---|---|---|
| Single Crystal Diamond (SCD) | High-purity, low-defect MPCVD diamond. Thickness: 0.1”m - 500”m. | Active device layers (HV/LVT), high-mobility FETs, high-purity optical windows. |
| Boron-Doped Diamond (BDD) | Conductive diamond films with tunable doping levels. | Electrodes, p-type layers for pn-diodes, electrochemical sensors, and ohmic contacts. |
| Polycrystalline Diamond (PCD) | Large-area substrates (up to 125mm) with exceptional thermal conductivity. | High-performance heat spreaders (PK), thermal management for power modules, large-area device substrates. |
Customization Potential
Section titled âCustomization PotentialâResearchers focused on device fabrication and packaging require precise control over material dimensions and interfaces. 6CCVD offers the following specialized services:
- Large-Area Substrates: We provide PCD plates/wafers up to 125mm in diameter, supporting the scale-up required for power IC and module development.
- Precision Thickness: SCD and PCD layers are available from 0.1”m (thin films for integration) up to 500”m, and substrates up to 10mm for robust packaging solutions.
- Ultra-Smooth Polishing: Critical for minimizing interface scattering and maximizing device performance, we guarantee surface roughness:
- SCD: Ra < 1nm
- Inch-size PCD: Ra < 5nm
- Custom Metalization: To facilitate device integration (HV/LVT/PK tracks), 6CCVD offers in-house deposition of standard and custom metal stacks, including: Au, Pt, Pd, Ti, W, and Cu.
Engineering Support
Section titled âEngineering Supportâ6CCVDâs in-house PhD team specializes in optimizing MPCVD growth parameters to meet specific electrical, thermal, and structural requirements for power semiconductor applications. We can assist researchers with:
- Material Selection: Determining the optimal diamond grade (SCD vs. PCD) and doping level (BDD) for specific device architectures (e.g., MOSFETs vs. pn-diodes).
- Thermal Management Design: Utilizing the high thermal conductivity of our PCD substrates to solve critical heat dissipation challenges inherent in high-power density modules (PK track).
- Global Logistics: Offering reliable global shipping (DDU default, DDP available) to ensure timely delivery of custom materials for critical research deadlines.
For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.
View Original Abstract
ISPSD is the premier forum for technical discussion in all areas of power semiconductor devices and power integrated circuits.ISPSD 2024 will be held in the concert hall âDie Glockeâ in the Free Hanseatic City of Bremen, the cosmopolitan town on the river Weser, home of the famous Bremen Town Musicians, full of history with a UNESCO World Heritage site and a European centre of aeronautics and space industry. CONFERENCE TRACKS HighVoltage Power Devices (HV): High voltage silicon based discrete devices (> 200 V) such as super junction MOSFETs, IGBTs, thyristors, GTOs and pn-diodes Low Voltage Power Devices and Power IC Technology (LVT): Low voltage silicon based discrete power devices (†200 V) and power devices for power ICs of all voltage ranges Power IC Design (ICD): Circuit design and demonstration using power IC technology platform GaN and III/V Compound Materials (GaN): GaN and other III/V compound material (e.g.AlN, GaAs) based power devices, technology and integration, materials, and processing SiC and Other Materials (SiC): SiC and other material (e.g.Ga 2 O 3 , diamond) based power devices, technology and integration, materials, and processing Module and Package Technologies (PK): Package technology for modules, discrete power devices and power ICs