High performance trench diamond junction barrier Schottky diode with a sidewall-enhanced structure
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2023-03-09 |
| Journal | Chinese Physics B |
| Authors | Ying Zhu, Wang Lin, DongâShuai Li, Liuan Li, Xianyi Lv |
| Institutions | State Key Laboratory of Superhard Materials, Jilin University |
| Citations | 4 |
Abstract
Section titled âAbstractâThe trench diamond junction barrier Schottky (JBS) diode with a sidewall enhanced structure is designed by Silvaco simulation. Comparing with the conventional trench JBS diode, Schottky contact areas are introduced on the sidewall of the trench beside the top cathode. The sidewall Schottky contact weakens the junction field-effect transistor effect between the trenches to realize a low on-resistance and a high Baligaâs figure of merit (FOM) value. In addition, the existence of the n-type diamond helps to suppress the electric field crowding effect and enhance the reverse breakdown voltage. With the optimal parameters of device structure, a high Baligaâs FOM value of 2.28 GW/cm 2 is designed. Therefore, the proposed sidewall-enhanced trench JBS diode is a promising component for the applications in diamond power electronics.