Ultratough single crystal boron-doped diamond
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2023-01-23 |
| Journal | OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) |
| Authors | Russell J. Hemley, Ho‐kwang Mao, Chih‐shiue Yan, Qi Liang |
| Institutions | Carnegie Institution for Science |
Abstract
Section titled “Abstract”The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m.sup.1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 .mu.m/h.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”- DOI: None