Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-01-26 |
| Journal | ACS Applied Materials & Interfaces |
| Authors | Yiwen Song, Arkka Bhattacharyya, Anwarul Karim, Daniel Shoemaker, HsienāLien Huang |
| Institutions | Kyma Technologies (United States), Pennsylvania State University |
| Citations | 55 |
Abstract
Section titled āAbstractāUltra-wide band gap semiconductor devices based on Ī²-phase gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) offer the potential to achieve higher switching performance and efficiency and lower manufacturing cost than that of todayās wide band gap power electronics. However, the most critical challenge to the commercialization of Ga<sub>2</sub>O<sub>3</sub> electronics is overheating, which impacts the device performance and reliability. We fabricated a Ga<sub>2</sub>O<sub>3</sub>/4H-SiC composite wafer using a fusion-bonding method. A low-temperature (ā¤600 Ā°C) epitaxy and device processing scheme was developed to fabricate MOSFETs on the composite wafer. The low-temperature-grown epitaxial Ga<sub>2</sub>O<sub>3</sub> devices deliver high thermal performance (56% reduction in channel temperature) and a power figure of merit of (ā¼300 MW/cm<sup>2</sup>), which is the highest among heterogeneously integrated Ga<sub>2</sub>O<sub>3</sub> devices reported to date. Simulations calibrated based on thermal characterization results of the Ga<sub>2</sub>O<sub>3</sub>-on-SiC MOSFET reveal that a Ga<sub>2</sub>O<sub>3</sub>/diamond composite wafer with a reduced Ga<sub>2</sub>O<sub>3</sub> thickness (ā¼1 Ī¼m) and a thinner bonding interlayer (<10 nm) can reduce the device thermal impedance to a level lower than that of todayās GaN-on-SiC power switches.