High-Performance Diamond Phototransistor with Gate Controllable Gain and Speed
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-01-12 |
| Journal | The Journal of Physical Chemistry Letters |
| Authors | Lei Ge, Bin Li, Guo Li, Xiwei Wang, Kuan Yew Cheong |
| Institutions | Shandong University, State Key Laboratory of Crystal Materials |
| Citations | 11 |
Abstract
Section titled āAbstractāThis paper presents a fabricated solar-blind phototransistor based on hydrogen-terminated diamond. The phototransistor shows a large photocurrent and enhancement of responsivity over conventional two-terminal diamond-based photodetector. These enhancement effects are owing to the internal gain of the phototransistor. The fabricated phototransistor exhibits a high photoresponsivity (<i>R</i>) of 2.16 Ć 10<sup>4</sup> A/W and a detectivity (<i>D</i>) of 9.63 Ć 10<sup>11</sup> jones, with gate voltage (<i>V</i><sub>G</sub>) and drain voltage of approximately -1.5 V and -5 V, respectively, under 213 nm light illumination. Even at ultralow operating voltage of -0.01 V, the device records satisfactory performance with <i>R</i> and <i>D</i> of 146.7 A/W and 6.19 Ć 10<sup>10</sup> jones, respectively. By adjusting the <i>V</i><sub>G</sub>, photocurrent generation in the device can be continuously tuned from the fast photoconductive effect to the optical gating effect with high optical gain. When <i>V</i><sub>G</sub> increases from 1.4 to 2.4 V, the decay time decreases from 1512.0 to 25.5 ms. Therefore, responsivity, dark current, <i>I</i><sub>photo</sub>/<i>I</i><sub>dark</sub>, and decay time of the device can be well tuned by <i>V</i><sub>G</sub>.