Conductive graphitic wires generation in diamond by means of pulsed Bessel beam micromachining
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2023-01-01 |
| Journal | EPJ Web of Conferences |
| Authors | Akhil Kuriakose, Andrea Chiappini, Belén Sotillo, Adam Britel, Pietro Aprà |
| Institutions | University of Insubria, Istituto di Fotonica e Nanotecnologie |
| Analysis | Full AI Review Included |
Technical Documentation & Analysis: 3D Conductive Graphitic Wires in CVD Diamond
Section titled âTechnical Documentation & Analysis: 3D Conductive Graphitic Wires in CVD DiamondâExecutive Summary
Section titled âExecutive SummaryâThis research successfully demonstrates the fabrication of highly conductive, three-dimensional graphitic microelectrodes within synthetic Single Crystal Diamond (SCD) using advanced ultrafast laser micromachining techniques.
- Core Achievement: Generation of transverse graphitic microelectrodes in 500 ”m thick SCD using pulsed Bessel beams (BB) without requiring sample translation.
- Material & Method: High-quality monocrystalline CVD diamond was modified in-bulk using a 790 nm Ti:Sapphire laser system, shaped into a Bessel beam with a 3 ”m core size.
- Record Conductivity: Achieved a low electrical resistivity of 0.04 Ω cm, confirmed to be one of the lowest values reported in the literature for laser-micromachined diamond structures, and the lowest using Bessel beams.
- Optimization Insight: Optimal conductivity was achieved using longer pulse durations (10 ps) compared to femtosecond pulses (200 fs), favoring better diamond-to-graphite transformation.
- Critical Applications: The resulting conductive structures are essential for next-generation diamond-based detectors, microfluidic chips, and integrated photonic circuits requiring integrated electric field sources or current collection.
- 6CCVD Relevance: 6CCVD specializes in providing the high-purity, custom-oriented SCD substrates (up to 500 ”m thickness) required to replicate and scale this advanced fabrication process.
Technical Specifications
Section titled âTechnical SpecificationsâThe following hard data points were extracted from the research detailing the material properties and optimal fabrication parameters:
| Parameter | Value | Unit | Context |
|---|---|---|---|
| Substrate Material | Monocrystalline CVD Diamond | N/A | Synthetic SCD |
| Substrate Thickness Used | 500 | ”m | Sample dimension (0.5 mm) |
| Optimal Electrical Resistivity | 0.04 | Ω cm | Achieved using 10 ps pulses |
| Optimal Pulse Duration | 10 | ps | Favored better conductivity |
| Optimal Pulse Energy | 6 | ”J | Used for best IV measurement |
| Laser Wavelength | 790 | nm | Ti:Sapphire amplified system |
| Bessel Beam Core Size | 3 | ”m | Transverse dimension |
| Bessel Beam Non-Diffracting Length | 700 | ”m | Optimized to cross sample thickness |
| Crystal Orientations Tested | (100) and (110) | N/A | Affects morphology and conductivity |
| Number of Pulses (Example) | 9000 | N/A | Used for 5 ”J, 200 fs fabrication (Fig 1) |
Key Methodologies
Section titled âKey MethodologiesâThe fabrication of in-bulk graphitic microelectrodes relied on precise control over the Bessel beam profile and laser parameters:
- Material Selection: Monocrystalline CVD diamond samples (5 mm x 5 mm x 0.5 mm) with specific crystal orientations ((100) and (110)) were utilized.
- Laser Source: A 20-Hz Ti:Sapphire amplified laser system delivering 40 fs transform-limited pulses at 790 nm was employed, with pulse duration tunable up to the ps regime.
- Beam Shaping: A conical lens (axicon) was used to reshape the Gaussian input beam into a finite energy Bessel beam (BB).
- Focal Optimization: A telescopic system demagnified the BB to achieve a 3 ”m core size and a 700 ”m non-diffracting length, ensuring the focal length crossed the entire 500 ”m sample thickness.
- Micromachining Regime: Fabrication was performed in a multiple shot regime (up to 9000 pulses) with the laser pulses injected orthogonally to the sample surface, eliminating the need for sample translation along the beam propagation direction.
- Parameter Tuning: Pulse duration was varied from 200 fs up to 10 ps, and pulse energy was varied (e.g., 5 ”J to 6 ”J) to optimize the diamond-to-graphite conversion.
- Characterization: Micro-Raman spectroscopy confirmed the crystalline structure modification, and electrical characterization was performed via Current-Voltage (IV) measurements using a 2-probe configuration.
6CCVD Solutions & Capabilities
Section titled â6CCVD Solutions & Capabilitiesâ6CCVD is uniquely positioned to supply the high-specification diamond materials and custom engineering services required to replicate, scale, and advance this research into commercial applications such as high-energy particle detectors and integrated photonics.
Applicable Materials
Section titled âApplicable MaterialsâTo achieve the high-quality graphitization and low resistivity demonstrated, the research requires high-purity, low-defect SCD material.
- Optical Grade SCD (Single Crystal Diamond): This material is essential for minimizing scattering and absorption during the ultrafast laser process. 6CCVD provides SCD wafers with thicknesses ranging from 0.1 ”m up to 500 ”m, perfectly matching the 500 ”m thickness used in this study.
- Custom Crystal Orientation: The study highlights the importance of crystal orientation ((100) vs. (110)) on microstructure morphology. 6CCVD offers custom-oriented SCD substrates to optimize the graphitization process for specific device geometries.
Customization Potential
Section titled âCustomization Potentialâ6CCVDâs in-house capabilities directly address the needs of advanced diamond device fabrication:
| Requirement from Research | 6CCVD Capability | Benefit to Customer |
|---|---|---|
| Substrate Dimensions | Plates/wafers up to 125 mm (PCD) and custom SCD sizes. | Enables scaling from R&D samples (5x5 mm) to production-scale devices. |
| Thickness Control | SCD thickness control from 0.1 ”m to 500 ”m. | Provides precise material thickness matching the 500 ”m requirement for through-wafer graphitization. |
| Surface Quality | Polishing to Ra < 1 nm (SCD). | Ensures optimal optical coupling and minimizes surface defects prior to laser processing. |
| Integrated Electrodes | Internal metalization capability (Au, Pt, Pd, Ti, W, Cu). | While the paper focused on graphitic electrodes, 6CCVD can deposit contact pads (e.g., Ti/Pt/Au) onto the diamond surface for robust electrical interfacing and packaging. |
| Logistics | Global shipping (DDU default, DDP available). | Ensures rapid and reliable delivery of sensitive materials worldwide. |
Engineering Support
Section titled âEngineering Supportâ6CCVDâs in-house PhD team offers expert consultation for projects involving advanced diamond processing. We can assist engineers and scientists in selecting the optimal diamond grade, orientation, and surface preparation required for complex laser micromachining applications, including:
- Optimizing material selection for high-energy particle detectors.
- Designing substrates for integrated photonic circuits utilizing graphitic waveguides or electrodes.
- Consulting on the necessary material specifications (e.g., nitrogen concentration, defect density) to achieve reproducible, high-conductivity graphitization results.
For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.
View Original Abstract
We present the fabrication of transverse graphitic microelectrodes in a 500 ÎŒm thick synthetic diamond bulk by means of pulsed Bessel beams. By suitably placing the elongated focal length of the Bessel beam across the entire sample, the graphitic wires grow from the bottom surface up to the top during multiple shot irradiation. The morphology of the microstructures generated and the micro-Raman spectra are studied as a function of the laser parameters and the diamond crystal orientation. We show the possibility to generate high conductivity microelectrodes, which are crucial for the application of electric fields or current transport/collection in various chips and detectors.