SiV Centers Electroluminescence in Diamond Merged Diode
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2022-12-08 |
| Journal | physica status solidi (RRL) - Rapid Research Letters |
| Authors | M. A. Lobaev, D.B. Radishev, A. L. Vikharev, Š. Š. ŠŠ¾ŃŠ±Š°ŃŠµŠ², Š”. Š. ŠŠ¾Š³Š“Š°Š½Š¾Š² |
| Institutions | Institute of Applied Physics |
| Citations | 5 |
Abstract
Section titled āAbstractāThe results of a study of electroluminescence of silicon vacancy color centers (SiV centers) in a diamond merged diode with a structure involving parallel connection of a p- i -n diode and a Schottky diode are presented. To create color centers, the inner region of the diode is doped with silicon. In the luminescence spectrum, only a line at a wavelength of 738 nm is detected, corresponding to the emission of a SiV color center in a negative charge state. Emission at a wavelength of 946 nm, corresponding to the SiV color center in the neutral charge state, is not detected. The electroluminescence of color centers is observed only in the p- i -n region of the diode, that is, it is experimentally demonstrated that both types of charge carriers are necessary to excite electroluminescence. A pronounced dependence of the photoluminescence intensity of SiV centers on the applied voltage is found.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2020 - Semiconductors and Semimetals
- 2014 - Quantum Information Processing with Diamond. Principles and Applications