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Role of High Nitrogen‐Vacancy Concentration on the Photoluminescence and Raman Spectra of Diamond

MetadataDetails
Publication Date2022-08-03
Journalphysica status solidi (a)
AuthorsMona Jani, Mariusz Mrózek, Anna Maria Nowakowska, Patrycja Leszczenko, Wojciech Gawlik
InstitutionsJagiellonian University
Citations11
AnalysisFull AI Review Included

Technical Documentation & Analysis: High NV Concentration in Diamond Spectroscopy

Section titled “Technical Documentation & Analysis: High NV Concentration in Diamond Spectroscopy”

This analysis focuses on the challenges and solutions presented in the study regarding the spectroscopic characterization of high-density Nitrogen-Vacancy (NV) ensembles in diamond.

  • Core Challenge: High NV concentration (specifically NV⁰ centers, > 1 ppm) generates intense Photoluminescence (PL) under standard visible excitation (532 nm), completely overwhelming the characteristic 1332 cm⁻¹ diamond Raman peak.
  • Materials Tested: The study utilized both ultra-pure CVD Monocrystalline Diamond (MCD-3) and Type Ib HPHT MCDs (MCD-1, MCD-2) with engineered NV concentration gradients (up to 36 ppm).
  • Critical Solution: Shifting the excitation wavelength to the Near-Infrared (NIR) region (1064 nm) effectively eliminates the NV PL overlap, allowing for accurate, undistorted Raman characterization of the diamond lattice quality.
  • New Diagnostic Tool: The research validates a method for calibrating high NV densities (0.1-10 ppm) by comparing the amplitude ratio of the NV⁰ Zero-Phonon Line (ZPL) to the diamond Raman peak amplitude under standardized conditions.
  • 6CCVD Value Proposition: 6CCVD specializes in providing the high-purity SCD and customizable Type Ib substrates required for precise NV center engineering, ensuring material quality is not the limiting factor in advanced quantum and sensing research.

The following hard data points were extracted from the research paper, detailing material properties and experimental parameters.

ParameterValueUnitContext
Diamond Raman Shift (First-Order)1332cm⁻¹Characteristic T2g optical phonon mode
NV Concentration Range (MCD-1)4 to 36ppmVolume irradiated, lateral gradient
Initial Nitrogen Concentration [Ni] (MCD-1)~ 380ppmType Ib HPHT substrate
Initial Nitrogen Concentration [Ni] (MCD-2)~ 50ppmType Ib HPHT substrate
Ultra-Pure Nitrogen Concentration [N] (MCD-3)< 5ppbType IIa electronic-grade CVD
NV⁰ Zero-Phonon Line (ZPL)575nmNeutral NV center fluorescence peak
NV⁻ Zero-Phonon Line (ZPL)637nmNegatively charged NV center fluorescence peak
Visible Excitation Wavelengths532, 633nmConfocal Raman Microscopy
NIR Excitation Wavelength1064nmFT-Raman Spectroscopy (Nd:YAG)
MCD-1 Annealing Temperature~ 750°CPost-electron irradiation
MCD-2 Annealing Temperature~ 900°CPost-proton implantation
MCD-2 Implantation Depth~ 20µmShallow NV layer created by 1.8 MeV protons
FND Crystallite Size140, 1nm, µmFluorescent Nanodiamonds used in study

The study employed precise material engineering and advanced spectroscopic techniques to investigate the competition between Raman scattering and PL.

  1. Substrate Selection: Utilized three distinct diamond types: Type Ib HPHT (high native nitrogen), Type IIa CVD (ultra-low nitrogen), and commercial Nanodiamonds (ND/FND).
  2. Volume NV Creation (MCD-1): A 3 MeV electron beam was used for volume irradiation, followed by annealing at ~ 750 °C in vacuum for 4 hours, resulting in a non-uniform, bulk NV gradient.
  3. Surface NV Creation (MCD-2): A 1.8 MeV proton beam was used for focused surface implantation, followed by annealing at ~ 900 °C in vacuum for 2 hours, creating a shallow NV layer (~ 20 µm thick).
  4. Visible Raman/PL Measurement: Confocal Raman microscopy (532 nm and 633 nm excitation) was used to collect spectra along the NV concentration gradients, demonstrating the obscuring effect of NV⁰ PL.
  5. NIR Raman Measurement: FT-Raman spectroscopy (1064 nm excitation) was employed to bypass the visible PL overlap, successfully revealing the undistorted 1332 cm⁻¹ diamond peak, even in high-NV-density samples.
  6. Calibration Development: Demonstrated the feasibility of using the ratio of the NV⁰ ZPL amplitude to the diamond Raman peak amplitude as a quantitative measure for NV density in the 0.1-10 ppm range.

6CCVD provides the foundational diamond materials and customization services necessary to replicate and advance the high-density NV ensemble research detailed in this paper.

Research Requirement6CCVD Material SolutionKey Benefit for Application
Ultra-Pure Substrates (MCD-3)Electronic Grade SCDNitrogen concentration < 5 ppb, essential for creating NV centers only via controlled implantation/irradiation.
High-Nitrogen Substrates (MCD-1, MCD-2)Synthetic Type Ib SCDAvailable with controlled initial [N] (e.g., 50 ppm to 400 ppm) for high-density NV ensemble creation via post-growth processing.
Shallow NV Layers (MCD-2)Highly Polished SCD PlatesUltra-smooth surfaces (Ra < 1 nm) minimize scattering, critical for high-resolution confocal measurements of shallow (20 µm) implanted layers.
Nanodiamond ResearchPCD WafersPolycrystalline diamond (PCD) up to 125 mm diameter, suitable for large-scale deposition or use as a source material for synthesizing high-quality FNDs.

The success of this research relies on precise material dimensions and surface quality, areas where 6CCVD excels.

  • Custom Dimensions & Thickness: The study used plates of specific sizes (e.g., 3.0 x 3.0 x 0.3 mm³). 6CCVD provides SCD plates from 0.1 µm to 500 µm thick and substrates up to 10 mm thick, cut to custom dimensions via precision laser cutting.
  • Surface Preparation: The optical characterization requires pristine surfaces. 6CCVD guarantees ultra-low roughness polishing (Ra < 1 nm for SCD), ensuring minimal background noise and optimal signal collection for ZPL and Raman measurements.
  • Metalization Services: While not explicitly used in the spectroscopy, NV-based quantum devices often require electrodes. 6CCVD offers in-house metalization capabilities (Au, Pt, Pd, Ti, W, Cu) for subsequent device fabrication on the characterized diamond plates.

The paper establishes a need for standardized calibration methods for high-density NV ensembles, a complex area requiring expert material knowledge.

  • NV Density Calibration: 6CCVD supports engineers seeking to implement the proposed NV⁰ ZPL/Raman ratio calibration method by supplying pre-characterized SCD substrates with verified initial nitrogen concentrations, ensuring a reliable starting point for irradiation protocols.
  • Thermal Stability: We provide SCD substrates capable of withstanding the high-temperature annealing steps (750 °C to 900 °C) required to mobilize vacancies and form NV centers, ensuring structural integrity throughout the process.
  • Application Expertise: 6CCVD’s in-house PhD team provides expert consultation on material selection and processing parameters for similar quantum information processing, sensorics (magnetometry/thermometry), and bio-particle detection projects utilizing high-density NV ensembles.

For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.

View Original Abstract

A photoluminescence (PL) and Raman spectroscopy study of various diamond samples that have high concentrations of nitrogen‐vacancy (NV) color centers up to multiple parts per million (ppm) is presented. With green, red, and near‐infrared (NIR) light excitation, it is demonstrated that while for samples with a low density of NV centers the signals are primarily dominated by Raman scattering from the diamond lattice, for higher density of NVs, a combination of Raman scattering from the diamond lattice and fluorescence from the NV centers is observed, while for the highest NV densities the Raman signals from diamond are completely overwhelmed by the intense NV’s fluorescence. However, under NIR excitation, Raman diamond signatures can be observed for some diamonds. These observations reveal different roles of two mechanisms of light emission and contradict the naïve belief that Raman scattering enables the complete characterization of a diamond crystalline sample.