Designing of room temperature diluted ferromagnetic Fe doped diamond semiconductor
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2022-07-14 |
| Journal | Functional Diamond |
| Authors | Tianwei Li, Jianxin Hao, Wei Cao, Tingting Jia, Zhenxiang Cheng |
| Institutions | Wuhan Institute of Technology, Shenzhen Institutes of Advanced Technology |
Abstract
Section titled āAbstractāSemiconductor devices generally take advantage of the charge of electrons, whereas magnetic materials are used for recording information involving electron spin. To make use of both charge and spin of electrons in semiconductors, a high concentration of magnetic elements can be introduced in nonmagnetic III-V semiconductors to make magnetic semiconductor. In this work, Fe-Diamond was obtained with low solubility by modified microwave plasma chemical vapor deposition technique. Magnetic measurements revealed that the magnetic transition temperature from paramagnetic to ferromagnetic-like is above room temperature. The bandgap of Fe-Diamond is calculated to be 1.65 eV, which indicates that Fe-Diamond is a room temperature diluted ferromagnetic semiconductor.