A Highly Responsive Hydrogen-Terminated Diamond-Based Phototransistor
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2022-06-08 |
| Journal | IEEE Electron Device Letters |
| Authors | Lei Ge, Yan Peng, Bin Li, Xiaohua Chen, Mingsheng Xu |
| Institutions | Jinan Institute of Quantum Technology, Griffith University |
| Citations | 16 |
Abstract
Section titled “Abstract”A high-performance solar-blind phototransistor, which is based on hydrogen-terminated diamond was fabricated and reported. The fabricated phototransistor was based on metal–semiconductor field effect transistor architecture with a high photoresponsivity (2.48 × 104 A/W), high external quantum efficiency (1.44 × 105), and high detectivity (5.08 × 109 Jones) under 213-nm light illumination (437 W/m2). At 5240 W/m2 light illumination, the change in drain current exceeds six orders of magnitude. Through transient response measurement, the rise/decay time of the phototransistor is about 88 / 36 ms and there is no significant persistent photoconductive effect.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2022 - High-performance harsh-environment-resistant GaOx solar-blind photodetectors via defect and doping engineering