Laser-induced luminescence of boron-doped synthetic diamond at various laser pulse durations
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2022-01-01 |
| Journal | Оптика и спектроскопия |
| Authors | E. A. Oleynichuk, П. А. Данилов, V. N. Lednev, P. A. Sdvizhenskii, М. С. Кузнецов |
| Institutions | Technological Institute for Superhard and Novel Carbon Materials, All-Russian Research Institute for Optical and Physical Measurements |
| Analysis | Full AI Review Included |
Technical Documentation & Analysis: Laser-Induced Luminescence in Boron-Doped Diamond
Section titled “Technical Documentation & Analysis: Laser-Induced Luminescence in Boron-Doped Diamond”Research Paper Analyzed: Oleynichuk et al., “Laser-induced luminescence of boron-doped synthetic diamond at various laser pulse durations,” Optics and Spectroscopy, 2022, Vol. 130, No. 4.
Executive Summary
Section titled “Executive Summary”This research validates the critical role of Type IIb Boron-Doped Diamond (BDD) in advanced optoelectronic and quantum applications, specifically demonstrating complex nonlinear optical behavior under ultrashort pulse excitation.
- Core Achievement: Observation and analysis of broadband A-band luminescence (350-650 nm) in BDD excited by ultrashort visible laser pulses (0.3-6.2 ps).
- Key Mechanism Identified: Establishment of distinct linear (single-photon) and nonlinear (two-photon) excitation mechanisms based on the dependence of luminescence yield on incident intensity.
- Nonlinear Optics Validation: The luminescence peak at ~434 nm exhibits a non-linear dependence (slope coefficient > 1), confirming its suitability for high-intensity optical switching, sensing, and two-photon absorption devices.
- Material Requirement: The experiment utilized high-purity, controlled-doping BDD (concentration ~1017 cm-3), a material specification perfectly matched by 6CCVD’s advanced MPCVD growth capabilities.
- Application Relevance: The findings are crucial for engineers developing diamond-based components for extreme environments, high-power laser systems, and integrated quantum platforms where precise control over defect centers and nonlinear response is essential.
- 6CCVD Value Proposition: 6CCVD offers scalable, high-uniformity MPCVD BDD wafers up to 125 mm, providing the necessary material quality and customization (doping, thickness, orientation) to replicate and advance this cutting-edge research.
Technical Specifications
Section titled “Technical Specifications”The following hard data points were extracted from the experimental section, detailing the material properties and laser parameters used in the study.
| Parameter | Value | Unit | Context |
|---|---|---|---|
| Sample Material | Type IIb BDD (HPHT Synthetic) | N/A | Wafer used in experiment |
| Sample Dimensions | 4 x 4 | mm | Wafer size |
| Sample Thickness | ~300 | µm | Wafer thickness |
| Crystal Orientation | (001) | N/A | Main growth orientation |
| Boron Concentration ({100} sector) | ~1017 | cm-3 | Estimated from 2800 cm-1 absorption band |
| Excitation Wavelength (PL) | 515 | nm | Second harmonic of Yb laser |
| Excitation Wavelength (Raman) | 532 | nm | Confocal Raman microscope |
| Pulse Durations Tested | 0.3, 1.3, 6.2 | ps | Variable ultrashort pulse durations |
| Pulse Energy Range | 2 - 400 | nJ | Used for PL measurement |
| Pulse Repetition Rate | 100 | kHz | Constant rate |
| Broadband Luminescence Range | 350 - 650 | nm | Observed A-band emission |
| Nonlinear Peak Wavelength | ~434 | nm | Exhibits non-linear (two-photon) dependence |
| Linear Peak Wavelength | ~537 | nm | Exhibits linear (single-photon) dependence |
| Nonlinear Slope Coefficient (434 nm) | > 1 | N/A | Log-log plot slope (Fig. 5b) |
Key Methodologies
Section titled “Key Methodologies”The experiment relied on precise material characterization and controlled ultrashort pulse excitation to isolate the nonlinear optical response of the boron-doped diamond.
- Material Selection and Preparation: A thin, blue synthetic Type IIb BDD wafer (4x4 mm, ~300 µm thick, (001) orientation) was selected.
- Doping Characterization: Boron concentration (~1017 cm-3) was estimated using transmission mode IR Fourier-spectrometry (Bruker Vertex 70v) by analyzing absorption bands characteristic of IIb-type diamond.
- Raman Spectroscopy: Confocal Raman laser scanning microscopy (Confotec MR350) with 532 nm pumping was used to confirm the diamond lattice structure (optical phonon peak at 1331 cm-1).
- Ultrashort Pulse Generation: The excitation source was the second harmonic (515 nm) of a Satsuma fiber ytterbium laser, capable of generating variable pulse durations (0.3, 1.3, 6.2 ps) and energies (2-400 nJ).
- Excitation Geometry: Laser radiation was focused ~150 µm under the diamond surface using a microscope objective (NA = 0.25).
- Photoluminescence (PL) Detection: The resulting PL was collected orthogonally to the pump beam using a LOMO UV objective (NA = 0.2) and measured by an Andor Shamrock 303i ICCD-spectrometer across the 300-800 nm range.
- Nonlinear Analysis: The maximum PL amplitude dependence on pumping intensity was plotted on a double logarithmic scale to determine the slope coefficients, confirming one-photon (slope ~1) versus two-photon (slope >1) excitation mechanisms.
6CCVD Solutions & Capabilities
Section titled “6CCVD Solutions & Capabilities”6CCVD specializes in providing the high-quality, customizable MPCVD diamond materials necessary to replicate, scale, and extend this research into commercial applications. Our capabilities exceed the specifications of the HPHT material used in this study, offering superior purity control and scalability.
Applicable Materials
Section titled “Applicable Materials”To replicate the controlled doping and high-purity requirements of this study, 6CCVD recommends the following materials:
| Material Recommendation | Key Feature | Relevance to Research |
|---|---|---|
| High-Purity MPCVD BDD (SCD) | Precise, uniform boron doping (down to 1017 cm-3 range). | Directly matches the required doping level for controlled A-band luminescence studies and minimizes unwanted nitrogen-vacancy (NV) centers. |
| Optical Grade SCD | Ultra-low defect density, superior surface finish (Ra < 1 nm). | Essential for minimizing scattering losses and maximizing the efficiency of two-photon excitation experiments involving focused ultrashort pulses. |
| Heavy Boron Doped PCD | Wafers up to 125 mm in diameter, high thermal conductivity. | Ideal for scaling up optoelectronic devices or high-power laser components where large area and robust thermal management are critical. |
Customization Potential
Section titled “Customization Potential”The research utilized a small, 4x4 mm sample. 6CCVD’s advanced manufacturing capabilities allow researchers and engineers to move immediately to device-scale production and complex integration.
- Large Area Wafers: While the paper used 4x4 mm, 6CCVD provides PCD plates/wafers up to 125 mm in diameter, enabling high-throughput device fabrication.
- Custom Thickness Control: The 300 µm thickness used is standard. 6CCVD offers precise thickness control for both SCD and PCD from 0.1 µm up to 500 µm (and substrates up to 10 mm), critical for optimizing waveguide or optical cavity designs.
- Orientation and Polishing: We provide (001) oriented SCD with superior surface quality (Ra < 1 nm), ensuring minimal surface defects that could interfere with the observed luminescence mechanisms.
- Integrated Metalization: For future electro-optical integration (e.g., creating BDD p-n junctions or electrodes for electrical excitation), 6CCVD offers in-house metalization services, including Au, Pt, Pd, Ti, W, and Cu layers, eliminating the need for external processing steps.
Engineering Support
Section titled “Engineering Support”The distinction between one- and two-photon excitation mechanisms requires highly controlled material properties. 6CCVD’s in-house PhD team specializes in correlating MPCVD growth parameters (gas flow, pressure, temperature) with resulting optical and electronic properties.
- Material Selection for Nonlinear Optics: Our experts can assist with material selection and custom doping recipes specifically tailored for ultrashort pulse interaction and high-power laser projects, ensuring reproducible nonlinear response.
- Defect Engineering: We provide consultation on minimizing or controlling specific point imperfections (like the A-band related dislocations mentioned in the paper) to optimize the material for specific quantum or optoelectronic functionalities.
For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly. We ship globally (DDU default, DDP available).
View Original Abstract
Excitation of type IIb synthetic diamond by ultrashort laser pulses in the visible range causes broadband luminescence in the UV visible range; the observed luminescence band can be attributed to the A band characteristic of diamonds. The photoluminescence spectra were obtained at different laser pulse durations (0.3-6.2 ps) depending on the pulse energy. A nonlinear dependence of the luminescence yield on the intensity of ultrashort pulses is established. Keywords: broadband luminescence, boron doped diamond, two-photon luminescence, A-band.