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Ultrahigh nitrogen-vacancy center concentration in diamond

MetadataDetails
Publication Date2021-12-07
JournalCarbon
AuthorsSĂĄndor Kollarics, Ferenc Simon, AndrĂĄs Bojtor, KristĂłf Koltai, G. Klujber
InstitutionsUniversity of Southern California, Institute for Solid State Physics and Optics
Citations19
AnalysisFull AI Review Included

Technical Documentation & Analysis: Ultrahigh Nitrogen-Vacancy Center Concentration in Diamond

Section titled “Technical Documentation & Analysis: Ultrahigh Nitrogen-Vacancy Center Concentration in Diamond”

This analysis focuses on the successful synthesis and characterization of ultrahigh concentrations of negatively charged Nitrogen-Vacancy (NV-) centers in single crystal diamond, a critical step for developing high-sensitivity quantum sensors and solid-state qubits.

  • Ultrahigh Concentration Achieved: NV- concentrations up to 15 ppm were successfully created in HPHT diamond, enabling macroscopic experimental methods like ensemble EPR/ENDOR.
  • High Conversion Efficiency: The process demonstrated a maximum conversion efficiency of 17.5% from isolated substitutional nitrogen (P1 centers) to NV- centers.
  • Stepwise Defect Engineering: NV- creation utilized a systematic, stepwise process involving high-energy electron and neutron irradiation followed by high-temperature thermal annealing.
  • Lattice Integrity Confirmed: EPR analysis confirmed that thermal annealing effectively restores the integrity of the diamond lattice after irradiation, transforming charged vacancies into stable NV- centers with a yield of approximately 25%.
  • Superior Characterization Method: Continuous-wave (CW) and pulsed Electron Paramagnetic Resonance (EPR) proved to be the ideal quantitative method for characterizing high-density NV- ensembles where traditional optical methods (PL/ODMR) are limited by high extinction coefficients and lattice distortions.
  • Quantum Coherence Data: Precise measurements of anisotropic spin-lattice (T1) and spin-spin (T2) relaxation times were achieved, providing essential data for optimizing NV-based quantum devices.
ParameterValueUnitContext
Starting Material TypeType 1b HPHT DiamondN/ASingle crystal, supplied by Element Six Ltd.
Initial Nitrogen Concentration (P1)< 200ppmSubstitutional nitrogen precursor
Highest NV- Concentration Attained15ppmAchieved in sample with 70 ppm initial N
N to NV- Conversion Efficiency (Max)17.5%Determined via CW EPR analysis
Vacancy to NV- Conversion Efficiency~25%Observed during thermal annealing step
Neutron Fluence (Total)10171/cm2Low dose region
Electron Fluence (Max Net)2.8 · 10181/cm2Used custom variable-energy RF LINAC
Annealing Temperature (Step 1)800°C2 hours, dynamic vacuum (10-6 mbar)
Annealing Temperature (Step 2)1000°C2 hours, dynamic vacuum (10-6 mbar)
EPR Microwave Frequency (X-band)~9.5GHzUsed for pulsed ENDOR measurements
Spin-Lattice Relaxation Time (T1)2.49 / 4.73msAngular dependent measurement
Spin-Spin Relaxation Time (T2)1.21 / 1.88”sAngular dependent measurement
14N Larmor Frequency (High Field)1.37MHzAt B0high = 446.65 mT
13C Nuclear Magnetic Resonance2.605 ± 0.015MHzObserved in low magnetic field spectrum
W16 Center Zero-Field Splitting Ratio0.86D(NV)Tentatively assigned to N(+)NV(-) complexes

The research employed a systematic, multi-step approach combining high-energy irradiation and thermal processing, followed by advanced magnetic resonance characterization.

  1. Material Selection: Single crystal, type 1b HPHT diamond (< 200 ppm N) was chosen as the starting material to provide the necessary substitutional nitrogen (P1 centers) precursor.
  2. Irradiation (Vacancy Creation):
    • Neutron Irradiation: Samples were exposed to a total neutron fluence of 1017 1/cm2 to create vacancies.
    • Electron Irradiation: Samples were exposed to variable-energy electrons (1-4 MeV) up to 2.8 · 1018 1/cm2 using a custom RF linear accelerator (LINAC).
  3. Thermal Annealing (NV Formation): Irradiated samples were annealed in a stepwise manner under dynamic vacuum (10-6 mbar) at 800 °C (2 hours) and 1000 °C (2 hours). This step mobilizes vacancies, allowing them to combine with P1 centers to form NV centers.
  4. Quantitative Characterization (CW EPR): Continuous-wave EPR was used after each irradiation and annealing step to quantitatively determine the relative concentration of NV- centers compared to the P1 center reference signal.
  5. Coherence Measurement (Pulsed EPR): Pulsed EPR techniques (Hahn-echo detected inversion recovery and Hahn-echo decay) were used to measure the critical spin-lattice (T1) and spin-spin (T2) relaxation times.
  6. Hyperfine Analysis (ENDOR): Electron-Nuclear Double Resonance (ENDOR) was performed at X-band frequency (~9.5 GHz) using the Mims pulse sequence to precisely determine the hyperfine and quadrupole coupling constants of the NV- centers with nearby 14N and 13C nuclei.

The successful creation of high-density NV- ensembles relies fundamentally on the quality and precise engineering of the diamond host material. 6CCVD specializes in providing the exact material specifications required to replicate and advance this critical research.

Research Requirement6CCVD Solution & CapabilityValue Proposition for Quantum Research
High-Purity Single Crystal Host6CCVD supplies Electronic Grade Single Crystal Diamond (SCD) plates and wafers, offering superior crystalline quality and low defect density.Provides the ideal, low-strain environment necessary to maximize NV- coherence times (T2 and T1), essential for qubit and sensor performance.
Controlled Nitrogen PrecursorsWe offer SCD materials with controlled, low-to-moderate nitrogen concentrations, allowing researchers to precisely tune the initial P1 center density for optimal NV- yield.Enables predictable scaling of NV- ensemble concentration, directly impacting magnetic field sensitivity (scaling as $\sqrt{N}$).
Custom Dimensions for Irradiation6CCVD provides custom laser cutting and shaping services for SCD and PCD plates up to 125mm, with thicknesses ranging from 0.1 ”m to 500 ”m.Ensures samples are perfectly sized for specialized high-energy irradiation chambers (LINACs) and high-frequency EPR/ENDOR resonators (e.g., X-band or Q-band).
Surface Quality & Strain ReductionOur in-house polishing achieves ultra-low roughness (Ra < 1 nm for SCD), critical for minimizing surface-related decoherence effects.Maintains the high lattice integrity required for post-annealing recovery, ensuring the long-term stability of the NV- centers.
Device Integration & MetalizationWe offer custom metalization services (Au, Pt, Pd, Ti, W, Cu) for creating microwave striplines or contacts directly on the diamond surface.Facilitates the integration of NV-rich diamond into functional quantum devices, such as the high-frequency EPR/ENDOR setups used in this study.
Boron-Doped Diamond (BDD) for Charge ControlFor experiments requiring alternative charge state control (e.g., NV0 vs. NV-), 6CCVD supplies Boron-Doped Diamond (BDD) films and substrates.Allows researchers to explore alternative defect engineering strategies beyond standard Type 1b precursors.

6CCVD’s in-house PhD team, comprised of expert material scientists and physicists, can assist with material selection and specification for similar NV Center Ensemble projects. We provide consultation on optimizing starting material purity, crystallographic orientation, and post-growth processing requirements (e.g., surface termination, annealing protocols) to achieve target NV- concentrations and coherence properties.

For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.

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