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6CCVD Research

Influence of B/N co-doping on electrical and photoluminescence properties of CVD grown homoepitaxial diamond films

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2021-12-08
JournalNanotechnology
AuthorsSrinivasu Kunuku, Mateusz Ficek, Aleksandra WieloszyƄska, Magdalena Tamulewicz‐Szwajkowska, Krzysztof Gajewski
InstitutionsGdaƄsk University of Technology, WrocƂaw University of Science and Technology
Citations9

Abstract

Section titled “Abstract”

Abstract Boron doped diamond (BDD) has great potential in electrical, and electrochemical sensing applications. The growth parameters, substrates, and synthesis method play a vital role in the preparation of semiconducting BDD to metallic BDD. Doping of other elements along with boron (B) into diamond demonstrated improved efficacy of B doping and exceptional properties. In the present study, B and nitrogen (N) co-doped diamond has been synthesized on single crystalline diamond (SCD) IIa and SCD Ib substrates in a microwave plasma-assisted chemical vapor deposition process. The B/N co-doping into CVD diamond has been conducted at constant N flow of N/C ∌ 0.02 with three different B/C doping concentrations of B/C ∌ 2500 ppm, 5000 ppm, 7500 ppm. Atomic force microscopy topography depicted the flat and smooth surface with low surface roughness for low B doping, whereas surface features like hillock structures and un-epitaxial diamond crystals with high surface roughness were observed for high B doping concentrations. KPFM measurements revealed that the work function (4.74-4.94 eV) has not varied significantly for CVD diamond synthesized with different B/C concentrations. Raman spectroscopy measurements described the growth of high-quality diamond and photoluminescence studies revealed the formation of high-density nitrogen-vacancy centers in CVD diamond layers. X-ray photoelectron spectroscopy results confirmed the successful B doping and the increase in N doping with B doping concentration. The room temperature electrical resistance measurements of CVD diamond layers (B/C ∌ 7500 ppm) have shown the low resistance value ∌9.29 Ω for CVD diamond/SCD IIa, and the resistance value ∌16.55 Ω for CVD diamond/SCD Ib samples.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

References

Section titled “References”
  1. 1999 - Nanocrystalline diamond films [Crossref]
  2. 1988 - Metastable growth of diamond and ‘diamondlike’ phases [Crossref]
  3. 2007 - Diamond for bio-sensor applications [Crossref]
  4. 1989 - Defect-induced stabilization of diamond films [Crossref]
  5. 1999 - Doping of diamond [Crossref]
  6. 2017 - Analysis of boron in diamond with UV photoluminescence [Crossref]
  7. 2011 - Creation and nature of optical centres in diamond for single-photon emission—overview and critical remarks [Crossref]
  8. 2010 - Fabrication of single optical centres in diamond—a review [Crossref]
  9. 2009 - Diamonds with a high density of nitrogen-vacancy centers for magnetometry applications [Crossref]
  10. 2014 - Nitrogen-vacancy centers in diamond: nanoscale sensors for physics and biology [Crossref]

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