Creating Low Thermal Resistance Interfaces in Wide Bandgap Semiconductors Through Bonding
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-11-10 |
| Authors | Zhe Cheng, Mark S. Goorsky, Fengwen Mu, Tadadomo Suga, Samuel Graham |
| Institutions | Georgia Institute of Technology, Chinese Academy of Sciences |
| Citations | 2 |
Abstract
Section titled āAbstractāThe thermal resistance at interfaces in wide bandgap semiconductors can impact the overall thermal resistance in junction temperature in devices. However, the resistance that exists at interfaces are impacted by the integration methods that arise from growth and or device manufacturing. In this work, we report the use of plasma activated bonding to create ultralow thermal resistance interfaces between WBG semiconductors (GaN and <tex xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>${Ga_{2}O_{3}}$</tex> ) and high thermal conductivity substrates (SiC, Diamond). Thermal boundary conductance was measured using time domain thermoreflectance and showed that the TBC is as high as 230 MW/m <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>2</sup> K for GaN on SiC and up to 90 MW/m <sup xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>2</sup> K for GaN on diamond. These results represent the some of the highest performing thermal interfaces for these materials systems and are enabled using a wafer scale compatible bonding process.