Structural and Physical Characterization of Nanodiamond Composite Thin Films Synthesized by Pulsed-Laser Ablation Method (A Review)
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2021-10-21 |
| Journal | Proceedings of International Exchange and Innovation Conference on Engineering & Sciences (IEICES) |
| Authors | Lama Osman, Abdelrahman Zkria, Tsuyoshi Yoshitake |
| Institutions | Kyushu University |
| Citations | 1 |
| Analysis | Full AI Review Included |
Technical Documentation & Analysis: Nanodiamond Composite Thin Films
Section titled âTechnical Documentation & Analysis: Nanodiamond Composite Thin FilmsâExecutive Summary
Section titled âExecutive SummaryâThis review highlights the successful synthesis and characterization of Ultrananocrystalline Diamond Composite (NDC) thin films using Pulsed-Laser Deposition (PLD). 6CCVD leverages its expertise in high-purity MPCVD diamond to support and extend research in this critical materials space.
- Low-Temperature Synthesis: NDC films were optimally grown at a relatively low substrate temperature of 550 °C under controlled hydrogen ambient (53.3 Pa), demonstrating compatibility with diverse solid-state substrates.
- High spÂł Content: Structural analysis confirmed high diamond purity, with spÂł bonding fractions reaching 68% (undoped) and significantly enhanced up to 74% in Boron-doped films.
- Precise Doping Control: The research successfully incorporated Nitrogen (up to 7.9 atm. %) and Boron (up to 13 atm. %) to tailor the electronic and structural properties of the NDC films, crucial for semiconductor applications.
- Electronic and Optical Potential: The films exhibit a direct optical band gap of 2.2 eV, positioning them as splendid candidates for advanced electronic, optical, and biomedical device integration.
- Methodological Advantage: PLD is confirmed as an effective physical vapor deposition technique for producing high-quality UNCD films under conditions often inaccessible to conventional CVD methods.
- 6CCVD Relevance: While this review focuses on PLD thin films, 6CCVD provides the necessary high-purity, large-area, and precisely doped MPCVD diamond substrates (SCD and PCD) required for subsequent device fabrication and commercial scaling.
Technical Specifications
Section titled âTechnical SpecificationsâThe following hard data points were extracted from the review detailing the synthesis and material properties of the Nanodiamond Composite (NDC) films.
| Parameter | Value | Unit | Context |
|---|---|---|---|
| Optimum Substrate Temperature (Tsub) | 550 | °C | PLD deposition condition |
| Hydrogen Ambient Pressure | 53.3 (or 4) | Pa (or Torr) | Optimal growth environment |
| Film Thickness Range | 1 - 5 | ”m | Single phase diamond films |
| NDC Crystallite Diameter | < 10 | nm | Embedded in amorphous carbon matrix |
| Laser Wavelength | 193 | nm | ArF excimer laser |
| Laser Pulse Duration | 24 | ns | ArF excimer laser |
| Laser Fluence | 5 | J/cm2 | Irradiance: 1.5 x 109 W/cm2 |
| Deposition Rate Range | 5 - 80 | nm/min | Depending on repetition rate (10 Hz or 50 Hz) |
| Undoped spÂł Fraction | 68 | % | Measured via XPS C1s spectra |
| Boron-Doped spÂł Fraction (13 atm. %) | 74 | % | Highest spÂł content reported |
| Direct Optical Band Gap | 2.2 | eV | Characteristic for NDC composite |
| Indirect Optical Band Gap | 1.0 | eV | Attributed to the a-C matrix |
Key Methodologies
Section titled âKey MethodologiesâThe Nanodiamond Composite (NDC) films were synthesized using the Pulsed-Laser Deposition (PLD) technique, a physical vapor deposition method.
- Target Material: Solid graphite target utilized for ablation.
- Laser Source: ArF excimer laser (193 nm, 24 ns pulse duration) focused onto the rotating target.
- Energy Parameters: Laser fluence maintained at 5 J/cm2 (Irradiance: 1.5 x 109 W/cm2). Pulse repetition rates varied, typically 10 Hz or 50 Hz.
- Substrate & Temperature: Films were deposited on diverse substrates (e.g., Si, Sapphire) maintained at an optimum temperature of 550 °C.
- Ambient Atmosphere: Hydrogen gas ambient pressure maintained at 53.3 Pa (4 Torr) to facilitate the selective etching of spÂČ bonds, promoting high spÂł content.
- Doping: Nitrogen or Boron doping was achieved by introducing controlled inflow ratios of the dopant gas into the ambient atmosphere during deposition.
- Characterization: Comprehensive structural and physical characterization utilized High-Resolution TEM, Raman Spectroscopy, FTIR, X-ray Photoemission Spectroscopy (XPS), and Near-Edge X-ray Absorption Fine Structure (NEXAFS) to analyze bonding configuration and crystallite size.
6CCVD Solutions & Capabilities
Section titled â6CCVD Solutions & CapabilitiesâThe research demonstrates the potential of nanodiamond composites for advanced electronic and optical applications. 6CCVD specializes in providing high-quality, large-area MPCVD diamond materials that are essential for scaling these laboratory findings into commercial devices.
Applicable Materials for Replication and Extension
Section titled âApplicable Materials for Replication and ExtensionâWhile the review focuses on PLD thin films, 6CCVD offers superior MPCVD materials necessary for high-performance device integration, especially where high purity, large area, or controlled conductivity is paramount.
| 6CCVD Material | Relevance to NDC Research | Key Advantage |
|---|---|---|
| Electronic Grade PCD | Ideal substrate for large-area electronic devices utilizing NDC films. | Wafers up to 125mm in diameter; excellent thermal management. |
| Heavy Boron Doped PCD (BDD) | Replicates and extends the Boron doping research (up to 13 atm. % reported). | Provides highly conductive, large-area electrodes (p-type semiconductor) with precise doping control. |
| Optical Grade SCD | Required for high-purity optical or quantum applications where defects must be minimized. | SCD thickness control from 0.1”m to 500”m; Ra < 1nm polishing. |
| Nitrogen-Doped SCD | Supports research into Nitrogen-Vacancy (NV) centers, a key application for nanodiamonds. | Precise control over nitrogen incorporation for quantum sensing and computing applications. |
Customization Potential for Advanced Research
Section titled âCustomization Potential for Advanced Researchâ6CCVDâs in-house manufacturing capabilities directly address the needs of researchers working on Nanodiamond Composite films and related devices:
- Custom Dimensions: We provide Polycrystalline Diamond (PCD) plates and wafers up to 125mm in diameter, significantly exceeding typical lab-scale substrates used in PLD.
- Thickness Control: We offer precise thickness control for both SCD and PCD materials, ranging from 0.1”m to 500”m for films and up to 10mm for bulk substrates.
- Surface Preparation: For optimal film adhesion and device performance, 6CCVD provides ultra-smooth polishing, achieving Ra < 1nm on Single Crystal Diamond (SCD) and Ra < 5nm on inch-size PCD.
- Custom Metalization: The integration of diamond films into electronic devices often requires specific contact layers. 6CCVD offers internal metalization services, including Au, Pt, Pd, Ti, W, and Cu, tailored to the researcherâs specific device architecture.
Engineering Support
Section titled âEngineering Supportâ6CCVDâs in-house PhD team specializes in the growth and characterization of MPCVD diamond. We offer authoritative professional support for projects involving:
- Material Selection: Assisting researchers in selecting the optimal diamond substrate (SCD, PCD, or BDD) to maximize the performance of their Nanodiamond Composite thin films.
- Doping Optimization: Consulting on precise Boron and Nitrogen doping recipes to achieve specific electronic properties, extending the findings reported in this review.
- Interface Engineering: Providing expertise on surface termination and polishing requirements necessary for subsequent thin-film deposition techniques like PLD.
For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.
View Original Abstract
Ultrananocrystalline diamond/hydrogenated amorphous carbon composite (so called Nanodiamond composite) thin films were deposited on diverse substrate materials at optimum substrate temperature of 550â and ambient hydrogen pressure of 53.3 Pa by pulsed-laser deposition technique. The structural and physical characterization of the undoped, nitrogen-doped and boron-doped films were well-discussed through this review.