Effects of the sequential implantation of Mg and N ions into GaN for p-type doping
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-09-29 |
| Journal | Applied Physics Express |
| Authors | Hideki Sakurai, Tetsuo Narita, Keita Kataoka, Kazufumi Hirukawa, Kensuke Sumida |
| Institutions | Ulvac-Phi (Japan), Polish Academy of Sciences |
| Citations | 32 |
Abstract
Section titled āAbstractāThe sequential implantation of Mg and N ions into GaN was investigated using conventional rapid thermal annealing and ultra-high-pressure annealing (UHPA). In cathodoluminescence, the green luminescence related to nitrogen vacancies (VNs) was mostly suppressed at the Mg/N ratio of 0.5-1.0, whereas the donor-acceptor pair (DAP) emission as a signature of Mg acceptors was maintained high. The excess N implantation reduced the DAP emission through the formation of nonradiative recombination centers. The combined process of optimal Mg/N implantation and UHPA at 1673 K improved ohmic contacts by increasing Mg concentration and suppressing VNs near the surface.