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Decay rate enhancement of diamond NV-centers on diamond thin films

MetadataDetails
Publication Date2021-06-24
JournalOptics Express
AuthorsHao Li, Jun‐Yu Ou, V.A. Fedotov, Nikitas Papasimakis
InstitutionsUniversity of Southampton
AnalysisFull AI Review Included

Technical Documentation & Analysis: Decay Rate Enhancement of NV-Centers

Section titled “Technical Documentation & Analysis: Decay Rate Enhancement of NV-Centers”

This document analyzes the requirements and findings of the research paper “Decay rate enhancement of diamond NV-centers on diamond thin films” and maps them directly to the advanced MPCVD diamond capabilities offered by 6CCVD.


This study successfully demonstrates precise control over the emission statistics of Nitrogen-Vacancy (NV) quantum emitters by leveraging thin-film diamond structures, a critical step for integrated quantum photonics and sensing.

  • Core Achievement: Experimental demonstration of a two-fold enhancement in the decay rate of NV$^0$ centers, reducing the average lifetime from 30 ns (on bare Si) to 17 ns (on a diamond thin film).
  • Mechanism: The enhancement is attributed to the coupling of NV emitters to optical slab modes (Fabry-Perot modes) supported by the thin diamond film, leading to a significant Purcell effect.
  • Tunability: The radiative decay rate was shown to be highly tunable, varying by up to 90% based on the precise thickness of the diamond film (e.g., 90 nm vs. 160 nm).
  • Material Requirement: The experiment relies on high-quality, precisely controlled thin diamond films (200 nm thickness) deposited on silicon substrates.
  • 6CCVD Value Proposition: 6CCVD specializes in producing MPCVD diamond films with the requisite sub-micron thickness control (0.1 ”m to 500 ”m) and large-area uniformity (up to 125 mm) necessary to replicate and scale this quantum control mechanism.

The following hard data points were extracted from the research paper, highlighting the critical material and experimental parameters.

ParameterValueUnitContext
Diamond Film Thickness (Exp.)200nmThickness of diamond film on Si substrate
Substrate Thickness500”mThickness of underlying Silicon wafer
NV$^0$ Emission Wavelength (ZPL)575nmZero Phonon Line (ZPL) used for detection
Spectrometer Wavelength Range3.6nmRange selected around 575 nm ZPL
Average NV$^0$ Lifetime (Bare Si, Exp)30 ± 6nsMean lifetime (”) and standard deviation (σ)
Average NV$^0$ Lifetime (Diamond Film, Exp)17 ± 4nsMean lifetime (”) and standard deviation (σ)
Decay Rate Enhancement Factor2.0N/ATwo-fold enhancement (30 ns / 17 ns)
Radiative Decay Rate Tuning DepthUp to 89%Achieved by varying film thickness (90 nm vs 160 nm)
Electron Beam Current (TR-CL)~1.8nAMaintained during time-resolved measurement
Diamond Refractive Index (ndiamond)2.40N/AUsed for 3D electromagnetic modeling (575 nm)
Silicon Refractive Index (nSi)4.00 + 0.03iN/AUsed for 3D electromagnetic modeling (575 nm)

The experimental procedure focused on characterizing the NV$^0$ lifetime dependence on the local dielectric environment provided by the thin diamond film.

  1. Nanodiamond Preparation: Nanodiamonds (~120 nm diameter, containing ~103 NV centers) were dispersed in methanol using a 10-minute ultrasonic bath.
  2. Substrate Fabrication: Two substrates were prepared: a bare 500 ”m thick Si wafer and a 200 nm thick diamond film grown on a 500 ”m thick Si wafer.
  3. Deposition: Nanodiamond clusters (120 nm to 1500 nm size range) were deposited onto both substrates via drop casting.
  4. Characterization Setup: Time-Resolved Cathodoluminescence (TR-CL) was performed using a Scanning Electron Microscope (SEM) operating in fixed-spot mode (10 kV LaB6 source).
  5. Measurement Technique: A pulsed electron beam, generated by a beam blanker and wave function generator, was synchronized with a single photon counting controller (TCSPC) to measure photon counting histograms.
  6. Data Selection: Measurements focused exclusively on the neutral NV$^0$ center emission at the Zero Phonon Line (ZPL) of 575 nm.
  7. Modeling: Full-wave 3D electromagnetic modeling (COMSOL 5.3a) was used to simulate dipole emission from a 60 nm nanodiamond sphere, allowing separation of radiative (ÎłRad) and non-radiative (ÎłNon) decay rates.

The successful control of NV decay rates hinges entirely on the quality and precise dimensional control of the supporting diamond thin film. 6CCVD is uniquely positioned to supply the high-specification MPCVD diamond materials required for scaling this quantum technology.

To replicate and advance the research on Purcell enhancement and decay rate tuning, 6CCVD recommends the following materials, optimized for optical and quantum applications:

6CCVD MaterialSpecificationApplication Relevance
Optical Grade SCD Thin FilmsSCD (0.1 ”m to 500 ”m thickness), Ra < 1 nm polishing.Ideal for integrated photonics requiring minimal scattering loss and high crystal quality for superior optical mode confinement.
High-Quality PCD WafersPCD (0.1 ”m to 500 ”m thickness), up to 125 mm diameter.Cost-effective solution for large-area quantum sensing arrays or when the NV centers are introduced via deposited nanodiamonds.
Custom SubstratesDiamond films grown directly on Si or other semiconductor substrates.Directly addresses the substrate requirement (Diamond film on Si) used in this study, ensuring robust device integration.

The research demonstrates that the decay rate is critically dependent on the film thickness, requiring extreme precision in material manufacturing. 6CCVD’s custom capabilities directly address this need:

  • Precision Thickness Tuning: The paper showed optimal tuning at specific thicknesses (e.g., 90 nm, 160 nm). 6CCVD offers MPCVD diamond films with thickness control from 0.1 ”m (100 nm) up to 500 ”m, enabling researchers to precisely target specific Fabry-Perot mode resonances for maximum Purcell enhancement.
  • Large-Area Scaling: We provide diamond plates and wafers up to 125 mm in diameter (PCD), essential for scaling laboratory experiments into commercial quantum devices and wafer-level processing.
  • Surface Engineering: For future integrated devices where nanodiamonds are replaced by implanted or grown NV centers, 6CCVD offers ultra-smooth polishing (Ra < 1 nm for SCD) to minimize surface scattering and maximize coupling efficiency to guided modes.
  • Metalization Services: While not used in this specific paper, 6CCVD offers in-house metalization (Au, Pt, Pd, Ti, W, Cu) for creating integrated photonic structures, electrodes, or contact pads necessary for advanced quantum device architectures.

6CCVD’s in-house team of PhD material scientists and engineers can assist researchers in selecting the optimal diamond material (SCD vs. PCD, specific thickness, and surface finish) required for similar quantum emitter control and integrated photonics projects. We provide global shipping (DDU default, DDP available) to ensure rapid delivery of custom materials worldwide.

Call to Action: For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.

View Original Abstract

We demonstrate experimentally two-fold enhancement of the decay rate of NV° centers on diamond/Si substrate as opposed to a bare Si substrate. We link the decay enhancement to the interplay between the excitation of substrate modes and the presence of non-radiative decay channels. We show that the radiative decay rate can vary by up to 90% depending on the thickness of the diamond film.