Fabrication of diamond modulation-doped FETs by NO2 delta doping in an Al2O3 gate layer
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2021-04-01 |
| Journal | Applied Physics Express |
| Authors | Makoto Kasu, Niloy Chandra Saha, Toshiyuki Oishi, Seong‐Woo Kim |
| Institutions | Saga University |
| Citations | 24 |
Abstract
Section titled “Abstract”Abstract We demonstrated modulation doping in diamond and fabricated diamond field-effect transistors (FETs) by NO 2 p-type delta doping in an Al 2 O 3 gate layer. We confirmed modulation doping effects: a spatial separation between the NO 2 acceptors in the Al 2 O 3 gate insulator and the hole channel on the diamond surface increased the hole mobility, and the high hole sheet concentration was maintained till high temperatures. The diamond FETs showed maximum drain current density of −627 mA mm −1 , and transconductance of 131 mS mm −1 . The mobility increased to 2465 cm 2 V −1 · s −1 near the threshold voltage, and the Baliga’s figure-of-merit was 179 MW cm −2 .