Carrier transport mechanism of diamond p + –n junction at low temperature using Schottky–pn junction structure
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2021-02-05 |
| Journal | Japanese Journal of Applied Physics |
| Authors | Ayumu Karasawa, Toshiharu Makino, Aboulaye Traoré, Hiromitsu Kato, Masahiko Ogura |
| Institutions | University of Tsukuba, Kanazawa University |
| Citations | 5 |
Abstract
Section titled “Abstract”Abstract We elucidate the carrier transport mechanism from the p + -layer (metallic-conduction) to the n-layer (band-conduction) in a diamond p + -n junction, which is the basic structure of diamond devices. We fabricate Schottky-pn diodes containing p + -n junctions and analyze the temperature dependence of electrical properties in the forward bias region. At temperatures higher than the cryogenic region, free holes transport from the p + -layer to the n-layer. In the cryogenic region, which is insufficient to excite holes to the valence band, the direct transport of holes from the effective carrier conduction level in the p + -layer to the n-layer by tunneling becomes dominant.