Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-01-01 |
| Journal | Nanoscale Advances |
| Authors | Florian Pantle, Fabian Becker, Max Kraut, Simon Wƶrle, Theresa Hoffmann |
| Institutions | Technical University of Munich, Max Planck Computing and Data Facility |
| Citations | 11 |
Abstract
Section titled āAbstractāWe present the selective area growth of GaN nanowires and nanofins on large-scale available diamond substrates. The nanostructures grow exclusively Ga-polar, enabling their application in GaN-on-diamond based high-power transistor applications.