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Multi-gigahertz laser generation based on monolithic ridge waveguide and embedded copper nanoparticles

MetadataDetails
Publication Date2021-01-01
JournalChinese Optics Letters
AuthorsChi Pang, Rang Li, Ziqi Li, Ningning Dong, Jun Wang
InstitutionsWuhan University, Shanghai Institute of Optics and Fine Mechanics
Citations7
AnalysisFull AI Review Included

Technical Documentation & Analysis: Multi-Gigahertz Laser Generation using Embedded Copper Nanoparticles

Section titled “Technical Documentation & Analysis: Multi-Gigahertz Laser Generation using Embedded Copper Nanoparticles”

This document analyzes the research paper “Multi-gigahertz laser generation based on monolithic ridge waveguide and embedded copper nanoparticles” to highlight key technical achievements and propose superior material solutions leveraging 6CCVD’s expertise in MPCVD diamond fabrication.


This research successfully demonstrates a compact, high-frequency mode-locked laser integrated onto a monolithic chip, validating a critical pathway for next-generation integrated photonics.

  • Monolithic Integration: A pulsed laser device was realized on a single Nd:YAG chip by combining ion implantation (for saturable absorber synthesis) and diamond saw dicing (for ridge waveguide fabrication).
  • High-Speed Performance: The device achieved a fundamental repetition rate of 7.8 GHz and an ultra-short pulse duration of 24.8 ps at 1064 nm.
  • Novel Saturable Absorber (SA): Copper (Cu) nanoparticles (NPs), synthesized via direct Cu+ ion implantation, acted as the SA through localized surface plasmon resonance (LSPR) and evanescent field coupling.
  • High Nonlinearity: The Cu NPs exhibited pronounced saturable absorption at 1030 nm, with a calculated saturation intensity of 12.9 GW/cm2.
  • Low Loss Waveguiding: The fabricated ridge waveguide demonstrated superior optical quality, achieving a low waveguide loss of 0.68 dB at the operating wavelength.
  • 6CCVD Relevance: The fabrication techniques (precision dicing, custom dimensions, integration of functional layers) align directly with 6CCVD’s core capabilities, offering a clear path to transition this technology to high-performance diamond substrates.

The following hard data points were extracted from the experimental results:

ParameterValueUnitContext
Repetition Rate7.8GHzMode-locked pulsed laser output
Pulse Duration24.8psSingle pulse width
Maximum Output Power58mWAchieved at 836 mW launched power
Laser Threshold214mWLaunched power
Operating Wavelength1064nmNd3+ ion 4F3/2 → 4I11/2 transition
Saturable Absorption (SA) Wavelength1030nmMeasured via Z-scan technique
Saturation Intensity (Is)12.9GW/cm2Nonlinear optical response of Cu NPs
Modulation Depth1.5%Saturable absorption characteristic
Waveguide Loss (α)0.68dBMeasured at 1064 nm (TM polarization)
Ridge Waveguide Width23.5”mDefined by diamond saw dicing
Cu NP Mean Diameter2.16nmSynthesized via ion implantation
Cu+ Implantation Fluence1 x 1017ions/cm2Used for NP synthesis
C4+ Irradiation Fluence6 x 1014ions/cm2Used for planar waveguide formation

The monolithic ridge waveguide chip with embedded Cu NPs was fabricated using a combination of ion beam engineering and precision mechanical processing:

  1. Substrate Selection: A Nd:YAG crystal (10 mm x 10 mm x 2 mm) was utilized as the base material.
  2. Nanoparticle Synthesis: Cu+ ions were implanted into the Nd:YAG surface at an energy of 100 keV and a fluence of 1 x 1017 ions/cm2. This process aggregated the impurity atoms to form Cu NPs, primarily distributed between 50 nm and 125 nm depth.
  3. Planar Waveguide Formation: C4+ ions were subsequently irradiated into the sample at 15 MeV with a fluence of 6 x 1014 ions/cm2, creating a low-index damage layer approximately 10 ”m thick beneath the surface, thus forming a planar optical waveguide.
  4. Ridge Waveguide Fabrication: A rotating diamond blade (2000 r/min) was employed for high-speed dicing to create parallel air grooves, defining the 23.5 ”m wide ridge waveguide structure.
  5. Nonlinear Characterization: The ultrafast nonlinear optical response was measured using an open-aperture Z-scan system excited by a 340 fs pulsed laser at 1030 nm to confirm saturable absorption.
  6. Laser Implementation: An end-face coupling system was used to launch the 808 nm pump laser and implement mode-locking via evanescent field interaction between the waveguide mode and the embedded Cu NPs.

The successful integration of high-speed laser generation on a monolithic chip, as demonstrated in this paper, requires exceptional material quality, thermal management, and precision fabrication—all core competencies of 6CCVD. By transitioning this technology to MPCVD diamond, researchers can achieve superior performance, especially in high-power or high-temperature environments.

Research Requirement/Challenge6CCVD Solution & CapabilityTechnical Advantage
Thermal Management (Critical for high-power GHz operation)Optical Grade Single Crystal Diamond (SCD)SCD offers the highest known thermal conductivity (> 2000 W/mK), enabling orders of magnitude better heat dissipation than Nd:YAG, crucial for scaling output power and maintaining stability.
Precision Waveguide Fabrication (Required 23.5 ”m ridge definition)Custom Dicing and Laser Cutting Services6CCVD utilizes high-precision diamond dicing and laser cutting to define complex ridge, channel, or rib waveguide structures on SCD and PCD substrates with micron-level accuracy.
Large Area Integration (Scaling monolithic chips)Large-Format PCD WafersWe supply Polycrystalline Diamond (PCD) plates up to 125 mm in diameter, facilitating the scale-up and mass production of integrated photonic circuits.
Ultra-Low Loss Surface Quality (Required Ra < 1 nm for low scattering)Superior Polishing SpecificationsSCD substrates are polished to an industry-leading surface roughness of Ra < 1 nm, minimizing scattering losses critical for evanescent field coupling and low waveguide loss (0.68 dB achieved in the paper).
Integration of Functional Layers (Cu NPs used as SA)Custom Metalization Services6CCVD offers in-house deposition of plasmonic and contact metals (Au, Pt, Pd, Ti, W, Cu) directly onto diamond surfaces, allowing for the integration of custom saturable absorbers or electrodes.
Applicable MaterialsBoron-Doped Diamond (BDD) FilmsBDD, available in thicknesses from 0.1 ”m to 500 ”m, can function as a robust, wide-band saturable absorber, providing a diamond-native alternative to external NP layers for mode-locking applications.
Thickness Requirements (Waveguide thickness ~10 ”m)Custom SCD/PCD ThicknessesWe provide SCD and PCD films in precise thicknesses ranging from 0.1 ”m to 500 ”m, allowing engineers to optimize waveguide geometry and evanescent field interaction depth.

6CCVD’s in-house PhD engineering team specializes in the material science and application of MPCVD diamond for high-power optics and integrated photonics. We offer consultation services to assist researchers in selecting the optimal diamond grade (SCD, PCD, or BDD) and defining custom fabrication parameters (dimensions, metalization, polishing) required to replicate or extend this high-performance integrated laser research onto a diamond platform.

For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.

View Original Abstract

Copper (Cu) nanoparticles (NPs) are synthesized under the near-surface region of the Nd:Y3Al5O12 (Nd:YAG) crystal by direct Cu+ ions implantation. Subsequently, the monolithic ridge waveguide with embedded Cu NPs is fabricated by C4+ ions irradiation and diamond saw dicing. The nonlinear optical response of the sample is investigated by the Z-scan technique, and pronounced saturable absorption is observed at the 1030 nm femtosecond laser. Based on the obvious saturable absorption of Cu NPs embedded Nd:YAG crystal, 1 ÎŒm monolithic mode-locked pulsed waveguide laser is implemented by evanescent field interaction between NPs and waveguide modes, reaching the pulse duration of 24.8 ps and repetition rate of 7.8 GHz. The work combines waveguides with NPs, achieving pulsed laser devices based on monolithic waveguide chips.