Influences of hydrogen ion irradiation on NcVsi − formation in 4H-silicon carbide
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2021-01-18 |
| Journal | Applied Physics Express |
| Authors | Takuma Narahara, Shin Sato, Kazutoshi Kojima, Yasuto Hijikata, Takeshi Ohshima |
| Institutions | National Institute of Advanced Industrial Science and Technology, National Institutes for Quantum Science and Technology |
| Citations | 4 |
Abstract
Section titled “Abstract”Abstract Nitrogen-vacancy (N C V Si − ) center in 4H-SiC is spin defect with near-infrared luminescence at room temperature and a promising candidate for quantum technologies. This paper reports on N C V Si − center formation in N-doped 4H-SiCs by hydrogen ion irradiation and subsequent thermal annealing. It is revealed photoluminescence for N C V Si − centers suddenly appears above the fluence of 5.0 × 10 15 cm −2 when annealed at 1000 °C. Appearance of a threshold fluence for their formation and/or activation has not been observed for other energetic particle irradiations. The possible mechanism is discussed based on the kinetics of hydrogen-related complexes and the majority carrier depletion caused by irradiation induced damage.