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Controlling thermoelectric transport via native defects in the diamond-like semiconductors Cu2HgGeTe4 and Hg2GeTe4

MetadataDetails
Publication Date2021-01-01
JournalJournal of Materials Chemistry A
AuthorsJiaxing Qu, Claire E. Porter, LĆ­dia C. Gomes, Jesse Adamczyk, Michael Y. Toriyama
InstitutionsUniversity of California, Santa Barbara, Northwestern University
Citations9

Defect analysis and phase boundary mapping of Cu 2 HgGeTe 4 and Hg 2 GeTe 4 reveal reciprocal doping potential despite their similar crystal structures. Measurements validate predictions of Cu 2 HgGeTe 4 as highly degenerate and Hg 2 GeTe 4 as an intrinsic semiconductor.