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Reduction of surface spin-induced electron spin relaxations in nanodiamonds

MetadataDetails
Publication Date2020-08-03
JournalJournal of Applied Physics
AuthorsZai-Li Peng, Jax Dallas, Susumu Takahashi, Zai-Li Peng, Jax Dallas
InstitutionsUniversity of Southern California
Citations11
AnalysisFull AI Review Included

Technical Analysis: Reduction of Surface Spin-Induced Electron Spin Relaxations in Nanodiamonds

Section titled “Technical Analysis: Reduction of Surface Spin-Induced Electron Spin Relaxations in Nanodiamonds”

This technical documentation analyzes the research concerning the mitigation of surface-induced decoherence in nanodiamonds (NDs) for quantum sensing applications. The findings directly inform the material requirements for high-performance Nitrogen-Vacancy (NV) and P1 center platforms, aligning perfectly with 6CCVD’s expertise in high-purity MPCVD diamond.


The following points summarize the core findings regarding spin relaxation control in nanodiamonds:

  • Quantum Sensing Limitation: Long spin relaxation times (T₁ and T₂) are critical for high-sensitivity NV-based quantum sensing, but surface spins (dangling bonds) in nanodiamonds significantly reduce these times.
  • Target System: The study used single-substitutional nitrogen impurity (P1) centers as a model system, as their T₁ and T₂ relaxation mechanisms are similar to those of nearby NV centers.
  • Decoherence Mitigation: Air annealing (oxidative etching) was employed to efficiently remove the surface shell and associated surface spins.
  • Process Validation: Dynamic Light Scattering (DLS) confirmed uniform etching with a linear rate of 3.5 nm/hour at 550 °C.
  • T₁ Improvement: High-Frequency (HF) EPR spectroscopy confirmed that air annealing significantly suppressed the surface spin contribution (Γs) to T₁ by a factor of 7.5 ± 5.4 after 7 hours.
  • T₂ Improvement: The spin coherence time (T₂) was observed to improve by a factor of 1.2 ± 0.2 under the same annealing conditions.
  • Material Implication: The results establish a crucial methodology for surface engineering, necessary to suppress spin relaxation processes in NDs and other diamond-based quantum platforms.

ParameterValueUnitContext
Annealing Temperature550°CAir annealing process
Etching Rate (Linear)3.5nm/hourDetermined via DLS characterization
Initial ND Diameter Range50 to 10nm to ”mRange of Type-Ib diamond powders studied
Nitrogen Impurity Concentration10 to 100ppmIn Type-Ib diamond powders
Surface Spin Shell Thickness (Pre-Annealing)~9nmBased on previous HF EPR study
T₁ Surface Contribution (Γs) Suppression7.5 ± 5.4FactorAfter 7 hours annealing at 550 °C
T₂ Improvement Factor1.2 ± 0.2FactorAfter 7 hours annealing at 550 °C
HF EPR Frequencies230 and 115GHzUsed for cw and pulsed EPR spectroscopy
T₁ (50 nm ND, 200 K, Non-Annealed)0.382 ± 0.080msP1 center spin relaxation time
T₂ (50 nm ND, 200 K, Non-Annealed)0.413 ± 0.007”sP1 center spin coherence time

The experimental success relied on precise material handling and advanced spectroscopic analysis:

  1. Material Selection: Used commercially available Type-Ib diamond powders (mechanically milled/ground) with mean diameters ranging from 50 nm to 10 ”m.
  2. Sample Preparation: Nanodiamond samples (approx. 30 mg) were uniformly dispersed in acetone via 10 minutes of ultrasound sonication, followed by solvent evaporation.
  3. Air Annealing (Oxidative Etching): Samples were placed in a quartz tube furnace stabilized at 550 °C. Periodic mixing (30 seconds every 10 minutes) was performed to ensure homogeneous application of the oxidative etching across the powder volume.
  4. Size and Etching Confirmation: Dynamic Light Scattering (DLS) was used to characterize particle size reduction, confirming a uniform etching process and a linear rate of 3.5 nm/hour.
  5. Spin Quantification (cw EPR): Continuous-wave (cw) High-Frequency (HF) EPR spectroscopy (230 GHz) was used at room temperature to distinguish and quantify the EPR signals from P1 centers and surface spins (dangling bonds).
  6. Relaxation Time Measurement (Pulsed EPR): Pulsed HF EPR (115 GHz) was employed to measure the spin relaxation times:
    • T₁ (longitudinal relaxation) was measured using the inversion recovery sequence.
    • T₂ (transverse relaxation/coherence time) was measured using the spin echo sequence.

The research highlights the critical need for materials with controlled surface properties and high internal purity to maximize spin coherence times (T₁ and T₂) for quantum applications. 6CCVD’s MPCVD diamond materials and processing capabilities are ideally suited to meet and exceed the requirements demonstrated in this study.

The Type-Ib material used in the paper contains native nitrogen impurities (P1 centers). For next-generation quantum sensing, researchers require materials with superior purity and controlled defect creation.

Application Requirement6CCVD Recommended MaterialTechnical Rationale
High-Coherence NV PlatformsOptical Grade Single Crystal Diamond (SCD)Ultra-low native nitrogen content (< 1 ppm) ensures minimal background spin bath noise, maximizing bulk T₁ and T₂ coherence times before surface processing.
Shallow NV Creation & SensingHigh-Purity SCD Plates (0.1 ”m - 500 ”m)Provides a clean, stable substrate necessary for precise, shallow NV creation via ion implantation, allowing researchers to replicate and improve upon the surface spin reduction techniques demonstrated.
High-Power EPR SubstratesPolycrystalline Diamond (PCD) WafersOffers high thermal conductivity and low dielectric loss, ideal for substrates supporting high-frequency (115 GHz, 230 GHz) EPR experiments requiring high microwave power.

6CCVD offers comprehensive material engineering services to support the replication and extension of this research:

  • Custom Dimensions: While the paper used ND powder, 6CCVD supplies large-area diamond platforms. We offer PCD wafers up to 125 mm in diameter and SCD plates up to 10 mm thick, enabling the scaling of quantum devices and large-area sensor arrays.
  • Precision Surface Engineering: We provide ultra-low roughness polishing (Ra < 1 nm for SCD, Ra < 5 nm for inch-size PCD). This smooth surface is crucial for achieving uniform etching rates (like the 3.5 nm/hour oxidative etching) and minimizing surface defects prior to annealing.
  • Integrated Device Fabrication: For researchers integrating EPR components or microwave circuitry, 6CCVD offers in-house custom metalization using materials including Au, Pt, Pd, Ti, W, and Cu, deposited directly onto the diamond surface.

6CCVD’s in-house PhD team specializes in material selection and optimization for quantum defects (NV, P1, SiV). We can assist researchers in selecting the optimal SCD or PCD grade to minimize bulk decoherence and maximize the effectiveness of surface treatments, such as the air annealing method used to improve T₁ and T₂ in NV-based sensing projects.

We offer reliable global shipping (DDU default, DDP available) to ensure your critical materials arrive safely and promptly, regardless of location.

For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.

View Original Abstract

Nanodiamonds (NDs) hosting nitrogen-vacancy (NV) centers are promising for applications of quantum sensing. Long spin relaxation times (T1 and T2) are critical for high sensitivity in quantum applications. It has been shown that fluctuations of magnetic fields due to surface spins strongly influence T1 and T2 in NDs. However, their relaxation mechanisms have yet to be fully understood. In this paper, we investigate the relation between surface spins and T1 and T2 of single-substitutional nitrogen impurity (P1) centers in NDs. The P1 centers located typically in the vicinity of NV centers are a great model system to study the spin relaxation processes of the NV centers. By employing high-frequency electron paramagnetic resonance spectroscopy, we verify that air annealing removes surface spins efficiently and significantly reduces their contribution to T1.

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  10. 2009 - Sensing of fluctuating nanoscale magnetic fields using nitrogen-vacancy centers in diamond [Crossref]