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Topological Singularity Induced Chiral Kohn Anomaly in a Weyl Semimetal

MetadataDetails
Publication Date2020-06-11
JournalPhysical Review Letters
AuthorsThanh Nguyen, Fei Han, Nina Andrejevic, Ricardo Pablo‐Pedro, Anuj Apte
InstitutionsUniversity of Maryland, College Park, National Institute of Standards and Technology
Citations42
AnalysisFull AI Review Included

Topological Singularity Induced Chiral Kohn Anomaly in a Weyl Semimetal: Material Science Analysis by 6CCVD

Section titled “Topological Singularity Induced Chiral Kohn Anomaly in a Weyl Semimetal: Material Science Analysis by 6CCVD”

This technical documentation analyzes the research paper on the topological Kohn anomaly in Tantalum Phosphide (TaP) and connects the experimental requirements and underlying physics to the advanced Single Crystal Diamond (SCD) and Polycrystalline Diamond (PCD) solutions offered by 6CCVD.


The research details the discovery and characterization of a novel electron-phonon interaction (EPI) mechanism in a Weyl Semimetal (TaP), providing critical insights into emergent topological materials.

  • Core Achievement: First experimental observation of a topological singularity-induced chiral Kohn anomaly in a Weyl Semimetal (TaP).
  • Mechanism: The anomaly arises from inter-Weyl node scattering, demonstrating a strong EPI characterized by a power-law divergence, distinct from conventional Fermi liquid behavior.
  • Chirality Selection: The phenomenon is governed by strict momentum and chirality conservation rules, highlighting the role of topological protection.
  • Experimental Validation: High-resolution inelastic X-ray scattering (IXS) and inelastic neutron scattering (INS) confirmed phonon softening at the W2 Weyl node across a wide temperature range (18 K to 300 K).
  • Material Context: The study reinforces the importance of EPI in solid-state systems, including its direct relevance to spin relaxation and coherence in diamond nitrogen-vacancy (NV) centers for Quantum Information Processing (QIP).
  • Methodology: Single crystals of TaP were grown via Chemical Vapor Transport (CVT) and precisely thinned to ~20 ”m for high-energy resolution IXS measurements.

The following hard data points were extracted from the experimental and theoretical sections of the paper:

ParameterValueUnitContext
Material StudiedTantalum Phosphide (TaP)N/AType-I Weyl Semimetal (WSM)
Crystal StructureBody-centered tetragonalN/ASpace group I41md (109)
W1 Weyl Node Energy~60meV below EFAssociated with a larger carrier pocket
W2 Weyl Node EnergyFewmeV above EFAssociated with a smaller carrier pocket
Fermi Velocity (vF)~1.5 x 105m/sUsed in field-theoretical calculations
IXS Incident Beam Energy21.657keVHigh-energy resolution IXS (HERIX)
IXS Energy Resolution2.1meVOverall instrumental resolution
Experimental Temperature Range18 to 300KIXS and INS measurements
TaP Sample Thickness~20”mOptimized for IXS photon transmission (0.33)
Lattice Parameter (a=b)3.32ÅConfirmed at room temperature
Lattice Parameter (c)11.34ÅConfirmed at room temperature

The experimental observation of the topological Kohn anomaly relied on precise material synthesis and high-resolution scattering techniques:

  1. Single Crystal Growth (Chemical Vapor Transport - CVT):

    • Ta and P powders (99.95% purity or higher) were mixed and sealed in a quartz tube with I2 (iodine) as the transport agent.
    • The two-zone furnace was optimized with temperatures of 900 °C and 950 °C to facilitate material transfer and condensation into centimeter-sized single crystals over 14 days.
  2. Sample Preparation and Thinning:

    • Crystal orientation was determined using back-scattering Laue diffractometry.
    • Samples were mechanically thinned via polishing to an optimal thickness of ~20 ”m to achieve suitable photon transmission (0.33) for IXS experiments, crucial due to the high X-ray absorption of Tantalum.
    • Thinned samples were glued onto a brass holder using GE-varnish for cryogenic mounting.
  3. Inelastic Scattering Measurements:

    • Inelastic X-ray Scattering (IXS): Performed at the Advanced Photon Source (APS) using the HERIX instrument (21.657 keV incident energy, 2.1 meV resolution) across temperatures from 18 K to 300 K.
    • Inelastic Neutron Scattering (INS): Performed at the High-Flux Isotope Reactor (ORNL) and NIST Center for Neutron Research (NCNR) using triple-axis spectrometers, primarily for the 5-25 meV energy range.
  4. Data Analysis and Computational Modeling:

    • Scattering spectra were fitted using damped harmonic oscillator models convoluted with instrumental resolution functions (pseudo-Voigt).
    • Ab initio calculations (VASP, PBE functional) were used to model phonon dispersion and confirm the discrepancy between theory (without EPI) and experimental results (with EPI).

This research, which explores fundamental electron-phonon interactions and their relevance to quantum systems (specifically mentioning diamond NV centers), aligns perfectly with 6CCVD’s expertise in advanced MPCVD diamond materials. We offer the precise material specifications and customization required to replicate, extend, or apply this research to next-generation quantum and electronic devices.

Research Requirement/Application6CCVD Material RecommendationTechnical Rationale
Quantum Information Processing (QIP)Optical Grade Single Crystal Diamond (SCD)SCD is the foundational material for high-coherence NV centers. Our material features ultra-low nitrogen concentration (N < 1 ppb), minimizing decoherence and maximizing spin relaxation times, directly supporting the QIP context cited in the paper [8-10].
Topological/Superconductivity StudiesHeavy Boron-Doped Diamond (BDD)BDD is a known p-type superconductor. It serves as an ideal platform for complementary studies on strong EPI, topological effects, and exotic electronic states in a robust, wide-bandgap material.
High-Resolution SpectroscopyPolycrystalline Diamond (PCD) SubstratesFor large-area integration or heat management in high-power experiments, our PCD plates offer high thermal conductivity and custom dimensions up to 125 mm.

The TaP experiment required precise control over sample geometry (20 ”m thickness) and mounting (gluing to a brass holder). 6CCVD provides the necessary precision engineering services:

  • Custom Dimensions and Thickness: We offer SCD and PCD plates/wafers with custom dimensions and precise thickness control, ranging from 0.1 ”m to 500 ”m (SCD/PCD) and substrates up to 10 mm. This capability allows researchers to optimize sample geometry for specific scattering cross-sections or device integration.
  • Ultra-Precision Polishing: To ensure minimal surface scattering and high-quality interfaces, 6CCVD guarantees surface roughness of Ra < 1 nm for SCD and Ra < 5 nm for inch-size PCD.
  • Advanced Metalization Services: The TaP sample required mounting for cryogenic experiments. 6CCVD offers in-house metalization (Au, Pt, Pd, Ti, W, Cu) for robust electrical contacts, thermal sinks, or direct bonding, providing superior alternatives to temporary mounting solutions like GE-varnish.

6CCVD’s in-house team of PhD material scientists specializes in the growth and characterization of advanced diamond materials. We can assist researchers in:

  • Material Selection: Guiding the choice between SCD, PCD, or BDD based on specific experimental needs (e.g., maximizing coherence time for QIP or optimizing carrier density for EPI studies).
  • Interface Engineering: Designing custom metalization schemes for optimal thermal and electrical performance in cryogenic or high-power Topological Semimetal projects.
  • Specification Optimization: Tailoring thickness and polishing requirements for demanding high-energy scattering experiments (IXS/INS) or integration into complex quantum device architectures.

Call to Action: For custom specifications or material consultation regarding advanced diamond platforms for QIP, topological physics, or high-energy scattering experiments, visit 6ccvd.com or contact our engineering team directly. We ship globally (DDU default, DDP available).

View Original Abstract

The electron-phonon interaction (EPI) is instrumental in a wide variety of phenomena in solid-state physics, such as electrical resistivity in metals, carrier mobility, optical transition, and polaron effects in semiconductors, lifetime of hot carriers, transition temperature in BCS superconductors, and even spin relaxation in diamond nitrogen-vacancy centers for quantum information processing. However, due to the weak EPI strength, most phenomena have focused on electronic properties rather than on phonon properties. One prominent exception is the Kohn anomaly, where phonon softening can emerge when the phonon wave vector nests the Fermi surface of metals. Here we report a new class of Kohn anomaly in a topological Weyl semimetal (WSM), predicted by field-theoretical calculations, and experimentally observed through inelastic x-ray and neutron scattering on WSM tantalum phosphide. Compared to the conventional Kohn anomaly, the Fermi surface in a WSM exhibits multiple topological singularities of Weyl nodes, leading to a distinct nesting condition with chiral selection, a power-law divergence, and non-negligible dynamical effects. Our work brings the concept of the Kohn anomaly into WSMs and sheds light on elucidating the EPI mechanism in emergent topological materials.