Skip to content

Cavity-Enhanced Photon Emission from a Single Germanium-Vacancy Center in a Diamond Membrane

MetadataDetails
Publication Date2020-06-05
JournalPhysical Review Applied
AuthorsRasmus HĂžy Jensen, Erika Janitz, Yannik Fontana, He Yi, Olivier Gobron
InstitutionsTechnical University of Denmark, Harvard University
Citations33
AnalysisFull AI Review Included

Technical Documentation: Cavity-Enhanced GeV Emission in MPCVD Diamond

Section titled “Technical Documentation: Cavity-Enhanced GeV Emission in MPCVD Diamond”

This document analyzes the requirements and achievements detailed in the research paper “Cavity-Enhanced Photon Emission from a Single Germanium-Vacancy Center in a Diamond Membrane” and correlates them with the advanced material capabilities offered by 6CCVD.


This research successfully demonstrates the integration of a single Germanium-Vacancy (GeV) center within a high-quality diamond membrane coupled to an open Fabry-Pérot microcavity, achieving significant enhancement of single-photon emission.

  • High Finesse Achievement: A record cavity finesse ($\mathcal{F}$) of 11,200 ± 1,700 was achieved at the Zero Phonon Line (ZPL) wavelength (603 nm), confirming the exceptional surface quality of the diamond membrane.
  • Spectral Density Enhancement: The coupling resulted in a 31±1-fold increase in the peak spectral density of single-photon emission, validating the “diamond-like” mode confinement approach.
  • Precision Material Requirement: The experiment utilized a precisely controlled diamond membrane thickness of $t_a$ = 862±4 nm, necessary for maximizing coupling efficiency ($\beta_{exp} = 0.40 \pm 0.13%$).
  • Quantum Potential: The system sets the stage for cryogenic operation, predicting a high Purcell factor ($F_P$) up to 32±16 and a reduction in excited state lifetime, crucial for efficient spin-photon interfaces.
  • Material Validation: The success relies entirely on ultra-high purity, high-quality Single Crystal Diamond (SCD) suitable for thin membrane fabrication and stable Group-IV defect incorporation.

The following table extracts key quantitative data points relevant to the material science and optical performance achieved in the study.

ParameterValueUnitContext
Defect CenterGermanium-Vacancy (GeV)N/AGroup-IV color center
Diamond Membrane Thickness ($t_a$)862 ± 4nmOptimized for electric field antinode confinement
Cavity Finesse ($\mathcal{F}$)11,200 ± 1,700N/AMeasured at 603 nm (ZPL)
ZPL Wavelength~603nmZero Phonon Line emission
Excitation Wavelength532nmGreen laser pump source
Spectral Density Enhancement31 ± 1TimesIncrease over confocal measurement
Measured Coupling Efficiency ($\beta_{exp}$)0.40 ± 0.13%Efficiency into the m=15 cavity mode
Predicted Purcell Factor ($F_P$)32 ± 16N/AProjected for cryogenic operation
Confocal Saturation Power ($P_{sat}$)3.9 ± 0.3mWFree-space measurement
Estimated Quantum Efficiency (QE)17 ± 3%Estimated for the studied GeV center

The successful integration of the GeV center with the high-finesse cavity relied on precise material engineering and advanced fabrication techniques.

  1. High-Purity MPCVD Diamond Growth: The foundation of the experiment is a high-quality, low-strain Single Crystal Diamond (SCD) substrate, necessary for subsequent thin membrane fabrication and stable defect incorporation.
  2. Membrane Fabrication: The SCD was processed into an ultra-thin membrane with a critical thickness of 862 nm, requiring high-precision etching and polishing techniques.
  3. GeV Center Creation: Germanium-Vacancy centers were incorporated into the diamond (typically via ion implantation) at a specific depth (target depth 125 nm) to ensure optimal coupling to the cavity mode’s electric field antinode.
  4. Open Fabry-PĂ©rot Cavity Assembly: The cavity utilized a macroscopic flat mirror and a microscopic spherical mirror (Radius of Curvature $R$ ≈ 43 ”m) machined onto a fiber tip.
  5. Dielectric Mirror Optimization: Both mirrors were coated with highly reflective dielectric Bragg stacks, numerically optimized for low transmission ($T_{flat} = T_{fiber} = 70$ ppm) at the ZPL wavelength (603 nm).
  6. Van der Waals Bonding: The diamond membrane was bonded to the flat mirror, ensuring minimal spectral diffusion and bulk-like optical properties for the embedded GeV centers.

This research highlights the critical need for ultra-high quality, precisely dimensioned diamond materials—a core offering of 6CCVD. Our capabilities directly support the replication and extension of this work to next-generation quantum devices utilizing Group-IV centers (GeV, SiV, SnV, PbV).

To replicate or extend this high-finesse cavity coupling research, Optical Grade Single Crystal Diamond (SCD) is required.

Material Specification6CCVD CapabilityRelevance to GeV Research
SCD Thickness ControlSCD plates from 0.1 ”m up to 500 ”mWe can supply membranes at the required sub-micron thickness (e.g., 862 nm) with high precision, essential for resonant coupling to “diamond-like” modes.
Surface QualityPolishing achieving Ra < 1 nm (SCD)Ultra-low surface roughness is mandatory to minimize scattering losses and achieve the demonstrated cavity finesse ($\mathcal{F}$ > 10,000).
Purity & Defect HostingHigh-Purity MPCVD SCDOur material is optimized for post-growth ion implantation (e.g., Ge, Sn, Pb) or in-situ doping, ensuring stable, narrow-linewidth quantum emitters.
Substrate DimensionsPlates/wafers up to 125 mm (PCD)While SCD is used here, we offer large-area PCD for scaling up related photonic components or for use as robust, large-area substrates.

6CCVD provides specialized services that directly address the complex fabrication requirements of quantum photonics:

  • Precision Thinning and Dicing: We offer custom laser cutting and dicing services to produce membranes of specific lateral dimensions, ensuring compatibility with microcavity mounting stages and Van der Waals bonding techniques.
  • Metalization Services: For future experiments requiring electrical gating, strain tuning, or robust bonding layers (e.g., for cryogenic operation), 6CCVD offers in-house metalization using materials such as Ti, Pt, Au, Pd, W, and Cu. This is crucial for integrating electrodes or creating robust interfaces for advanced quantum registers.
  • Boron Doping (BDD): For applications requiring integrated electrical control or sensing, we offer Boron-Doped Diamond (BDD) materials, which can be tailored for conductivity while maintaining high optical quality.

The successful integration of quantum emitters into high-finesse cavities requires deep expertise in both material science and quantum optics.

6CCVD’s in-house PhD team specializes in MPCVD diamond growth and processing for quantum applications. We can assist researchers with:

  • Material Selection: Optimizing SCD grade and thickness for specific ZPL wavelengths and cavity modes.
  • Surface Preparation: Consulting on post-processing techniques to maintain ultra-low surface roughness necessary for high-finesse open-cavity systems.
  • Defect Integration Strategy: Advising on the optimal diamond material properties for subsequent ion implantation or high-strain engineering projects involving Group-IV centers (GeV, SnV, PbV).

For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.

View Original Abstract

The nitrogen-vacancy center in diamond has been explored extensively as a light-matter interface for quantum information applications, however it is limited by low coherent photon emission and spectral instability. Here, we present a promising interface based on an alternate defect with superior optical properties (the germanium-vacancy) coupled to a finesse $\approx11{,}000$ fiber cavity, resulting in a $31^{+11}_{-15}$-fold increase in the spectral density of emission. This work sets the stage for cryogenic experiments, where we predict a measurable increase in the spontaneous emission rate.