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High-Q Nanophotonic Resonators on Diamond Membranes using Templated Atomic Layer Deposition of TiO2

MetadataDetails
Publication Date2020-05-22
JournalNano Letters
AuthorsAmy Butcher, Xinghan Guo, Robert Shreiner, Nazar Delegan, Kai Hao
InstitutionsArgonne National Laboratory, University of Chicago
Citations16
AnalysisFull AI Review Included

Technical Documentation & Analysis: High-Q Nanophotonic Resonators on Diamond Membranes

Section titled “Technical Documentation & Analysis: High-Q Nanophotonic Resonators on Diamond Membranes”

This research demonstrates a highly scalable and deterministic platform for integrating high-performance nanophotonic resonators with single-crystal diamond (SCD) membranes, crucial for advancing solid-state quantum technologies.

  • Core Achievement: Fabrication of high-Quality factor (Q) nanophotonic resonators (up to Q = 33,260 on silica, Q = 4,410 on diamond) using templated Atomic Layer Deposition (ALD) of TiO₂.
  • Material Innovation: The platform utilizes ultra-thin (50 nm) SCD membranes, avoiding the conventional, damaging process of etching wavelength-scale features directly into diamond.
  • Quantum Application: The resulting devices enable high-cooperativity spin-photon interfacing, specifically targeting color centers like the Silicon-Vacancy (SiV) center (ZPL 737 nm).
  • Surface Quality: The ALD approach minimizes surface roughness, which is critical for reducing scattering loss (proportional to $\sigma^2/\lambda^3$) in the visible and near-infrared regimes.
  • Process Flexibility: The fabrication method is highly reproducible, non-invasive to the underlying diamond, and can be iterated multiple times on a single membrane sample without damaging the crystal lattice.
  • 6CCVD Value Proposition: This work relies fundamentally on ultra-smooth, high-purity SCD membranes, a core specialty of 6CCVD, ensuring optimal starting material quality for quantum applications.
ParameterValueUnitContext
Diamond MaterialSingle Crystal Diamond (SCD)N/AMembrane substrate
SCD Membrane Thickness50nmUsed for 1D photonic crystal cavities
Maximum Q Factor (Silica)33,260N/AMicroring resonator (729 nm)
Maximum Q Factor (Diamond)4,410N/A1D cavity on 50 nm SCD membrane
Target ZPL Wavelength737nmSilicon-Vacancy (SiV) color center
TiO₂ Refractive Index (n)> 2.3N/AHigh index guiding material
TiO₂ Bandgap~3.3eVSuitable for visible operation
Waveguide Width (Ring)300nmTiO₂ structure
Waveguide Height (SCD Cavity)300nmTaller structure required for n=2.4 diamond
ALD Deposition Temperature90°CEnsures amorphous TiO₂ phase
Post-Fabrication Annealing250°CFor 2 hours, reducing optical loss
Simulated Purcell Factor (FPurcell)Up to 175N/AAt cavity mode maximum (Q=4,400)
Cavity Mode Volume (V)2.0($\lambda$/n)ÂłN/ASimulated at SiV ZPL (737 nm)

The fabrication relies on a non-invasive, templated ALD process to create high-index TiO₂ structures on the diamond surface.

  1. E-Beam Lithography (EBL):

    • Resist: 950K PMMA A4 (270 nm - 330 nm thickness).
    • Conduction Layer: 20 nm Au (thermally evaporated) to mitigate charge build-up.
    • Exposure: 100 kV, 1200 ”C/cmÂČ dose, low beam current (0.3 nA).
    • Development: 1:3 MIBK:IPA solution at 7 °C for 90 s.
  2. ALD Template Preparation:

    • Residual Polymer Removal: Brief 3-second O₂ plasma exposure (10 sccm O₂, 50 W ICP power).
    • Etch Rate (PMMA): Roughly 2.5 nm/s (ensures minimal substrate damage).
  3. Atomic Layer Deposition (ALD) of TiO₂:

    • Chamber Temperature: 90 °C (below PMMA glass transition, ensures amorphous TiO₂).
    • Precursors: Tetrakis(dimethylamido) titanium (TDMAT) and water.
    • Pulse Times: 0.08 s (TDMAT) and 0.10 s (Water).
    • Deposition Rate: Typically 0.6 Å/cycle.
    • Process: Templates are significantly over-filled to planarize the top surface.
  4. ICP RIE Etching and Stripping:

    • Overfill Removal: Chlorine-based ICP RIE etch (150 W substrate bias, 400 W ICP power, Cl₂/BCl₃ gases).
    • Etch Rate (TiO₂): Typically 1.5-1.7 nm/s (stops on the PMMA resist).
    • Resist Removal: Chemical strip (Nanostrip/MicroChem) to reveal the templated TiO₂ devices.
  5. Post-Fabrication Annealing:

    • Process: Hot plate anneal at 250 °C for two hours to reduce material optical loss.
  6. Diamond Membrane Preparation (Prior to ALD):

    • Initial Thickness: 500 nm SCD generated via ion bombardment and CVD overgrowth.
    • Mounting: Adhered to a Si carrier chip using ~500 nm of HSQ resist.
    • Final Thinning: Back-etched to the desired 50 nm thickness using ICP etching (Ar/Cl₂ gases, 400 W ICP, 250 W bias).

This research highlights the critical need for ultra-high quality, precisely engineered diamond substrates to enable next-generation quantum devices. 6CCVD is uniquely positioned to supply the foundational materials required to replicate and scale this work.

The success of this platform hinges on the quality and smoothness of the Single Crystal Diamond (SCD) membrane.

Research Requirement6CCVD Material SolutionKey Specification Match
Ultra-Thin SubstrateOptical Grade SCDSCD thickness available from 0.1 ”m up to 500 ”m. We provide the high-purity SCD necessary for subsequent thinning to 50 nm membranes.
Minimal Scattering LossUltra-Smooth PolishingGuaranteed surface roughness (Ra) < 1 nm for SCD, essential for minimizing optical scattering loss ($\sigma^2/\lambda^3$) in the visible spectrum.
Color Center IntegrationHigh-Purity SCDLow-strain, high-coherence SCD material grown via MPCVD, ideal for hosting high-performance quantum emitters (NV, SiV, GeV, SnV).
Alternative SubstratesBoron-Doped Diamond (BDD)For applications requiring integrated electrical control or sensing, 6CCVD offers BDD films with tunable conductivity.

6CCVD’s in-house engineering capabilities directly address the dimensional and integration challenges faced in nanophotonics fabrication:

  • Custom Dimensions: The paper utilized 200 ”m x 300 ”m membranes. 6CCVD provides custom laser cutting and shaping services for SCD and PCD plates up to 125 mm, ensuring precise starting dimensions for membrane fabrication.
  • Metalization Services: While this study used TiO₂, future integrated photonics platforms often require electrical contacts or alignment marks. 6CCVD offers in-house metalization (Au, Pt, Pd, Ti, W, Cu) tailored to specific device geometries and processing requirements (e.g., alignment marks for EBL).
  • Thickness Control: We offer precise control over the initial SCD thickness (0.1 ”m to 500 ”m), allowing researchers to optimize the starting material for subsequent ion implantation and membrane thinning processes.

6CCVD’s in-house PhD team specializes in MPCVD diamond growth and material characterization for quantum applications. We offer consultation services to assist researchers in material selection for similar integrated quantum photonics projects, ensuring the diamond substrate meets the stringent requirements for low-loss waveguiding and high spin-coherence.

For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.

View Original Abstract

Integrating solid-state quantum emitters with nanophotonic resonators is essential for efficient spin-photon interfacing and optical networking applications. While diamond color centers have proven to be excellent candidates for emerging quantum technologies, their integration with optical resonators remains challenging. Conventional approaches based on etching resonators into diamond often negatively impact color center performance and offer low device yield. Here, we developed an integrated photonics platform based on templated atomic layer deposition of TiO<sub>2</sub> on diamond membranes. Our fabrication method yields high-performance nanophotonic devices while avoiding etching wavelength-scale features into diamond. Moreover, this technique generates highly reproducible optical resonances and can be iterated on individual diamond samples, a unique processing advantage. Our approach is suitable for a broad range of both wavelengths and substrates and can enable high-cooperativity interfacing between cavity photons and coherent defects in diamond or silicon carbide, rare earth ions, or other material systems.