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Accelerating Auxiliary-Field Quantum Monte Carlo Simulations of Solids with Graphical Processing Units

MetadataDetails
Publication Date2020-05-21
JournalJournal of Chemical Theory and Computation
AuthorsFionn D. Malone, Shuai Zhang, Miguel A. Morales
InstitutionsQuantum Simulations (United States), Lawrence Livermore National Laboratory
Citations34
AnalysisFull AI Review Included

Technical Documentation: AFQMC Simulation of Diamond Structure

Section titled “Technical Documentation: AFQMC Simulation of Diamond Structure”

This document analyzes the research paper “Accelerating Auxiliary-Field Quantum Monte Carlo Simulations of Solids with Graphical Processing Units,” focusing on the computational validation of fundamental properties of the diamond structure, which directly supports the engineering and sales of 6CCVD’s Single Crystal Diamond (SCD) and Polycrystalline Diamond (PCD) materials.


This research validates the fundamental electronic structure of Carbon in the diamond lattice using highly accelerated quantum simulation, providing critical data for advanced diamond material engineering.

  • Computational Breakthrough: Demonstrated a factor of 40 speedup in Auxiliary-Field Quantum Monte Carlo (AFQMC) simulations for solid-state systems by leveraging modern GPU architectures and batched linear algebra.
  • Material Validation: Achieved systematic convergence of the cohesive energy of Carbon in the diamond structure, matching the experimental result to within 0.02 eV/atom.
  • Scaling and Efficiency: The implementation successfully utilized the k-point representation to exploit crystal momentum conservation, enabling simulations with up to 7344 basis functions and 1728 electrons.
  • Accuracy Benchmark: AFQMC results for cohesive energy were shown to be near par with highly accurate but computationally expensive methods like CCSD(T).
  • Engineering Relevance: The validated computational framework is essential for future predictive modeling of complex diamond properties, including defect formation, doping effects (e.g., Boron), and electronic band structure, directly impacting 6CCVD material development.
  • Material Requirement: High-purity, low-defect SCD substrates are the physical realization of the ideal diamond lattice modeled in this study.

The following hard data points were extracted from the analysis of the AFQMC simulations of Carbon in the diamond structure:

ParameterValueUnitContext
Computational Speedup (GPU vs CPU)40FactorSpeedup over CPU implementation for AFQMC block calculation
Cohesive Energy (Extrap. cc)-7.56(1)eV/atomExtrapolated to the thermodynamic and CBS limit
Experimental Cohesive Energy-7.545eV/atomCorrected for zero-point effects
Agreement with Experiment0.02eVDifference between best AFQMC result and experiment
Maximum Basis Functions7344FunctionsGTH-TZVP basis set, 6x6x6 k-point grid
Maximum Electrons Simulated1728ElectronsCorresponds to 6x6x6 k-point grid simulation
Lattice Constant (Carbon Diamond)3.6ÅStructure parameter used in simulation
AFQMC Scaling (System Size)O(N3) - O(N4)N is system sizeFavorable scaling compared to O(N6) or O(N7) for canonical CCSD(T)
Cholesky Factorization Threshold1 x 10-5HaStopping criterion for factorization error

The high-performance and high-accuracy results were achieved through specific algorithmic and hardware optimization strategies:

  1. Auxiliary-Field Quantum Monte Carlo (AFQMC): Utilized the phaseless AFQMC (ph-AFQMC) method to stochastically solve the many-electron Schrödinger equation, providing highly accurate correlation energies for solid-state systems.
  2. k-Point Representation: The algorithm was reformulated to explicitly account for crystal momentum conservation, which significantly reduced the sparsity of the two-electron integrals by a factor of 1/Nk, leading to massive savings in storage and computational cost.
  3. Cholesky Decomposition Factorization: Electron Repulsion Integrals (ERIs) were factorized using a modified Cholesky decomposition, allowing the two-body Hamiltonian to be written as a sum of squares of one-body operators.
  4. GPU Optimization via Batched Linear Algebra: The implementation was optimized for modern GPU architectures by ensuring all walkers were processed concurrently and by utilizing batched BLAS/LAPACK operations (e.g., MAGMA) to efficiently handle the large number of small, dense matrix operations arising from the k-point representation.
  5. Hybrid Propagation Scheme: Employed a hybrid scheme for walker propagation that reduces the frequency of the most time-consuming step (local energy evaluation) to once per block, further enhancing GPU efficiency.

The computational validation of diamond’s fundamental properties using advanced AFQMC methods directly informs the material requirements for next-generation diamond devices. 6CCVD provides the physical materials and processing capabilities necessary to realize these computationally optimized structures.

Research Requirement/Application6CCVD Solution & CapabilityTechnical Advantage for Engineers
Ideal Diamond Lattice ModelingOptical Grade Single Crystal Diamond (SCD)Provides the highest purity (low nitrogen/boron) and lowest defect density, matching the ideal, defect-free lattice structure validated by the AFQMC simulation for fundamental electronic studies (e.g., quantum computing substrates).
Large-Scale System SimulationPolycrystalline Diamond (PCD) WafersWe offer PCD plates/wafers up to 125mm in diameter, enabling the scale-up of devices based on the validated electronic structure. Our PCD features polishing down to Ra < 5nm for inch-size wafers.
Modeling Doped/Defective SystemsBoron-Doped Diamond (BDD) MaterialAFQMC is crucial for modeling the electronic effects of dopants. 6CCVD supplies BDD substrates and films (SCD or PCD) with custom doping levels and thicknesses (up to 10mm substrates) for semiconductor and electrochemical research.
Custom Dimensions and ThicknessCustom Dimensions and ThicknessWe provide SCD films from 0.1”m to 500”m and PCD films in the same range, allowing researchers to precisely match physical material dimensions to the system sizes modeled computationally (e.g., supercells).
Device Integration & ContactingCustom Metalization ServicesThe electronic structure results inform optimal contact design. 6CCVD offers in-house metalization capabilities, including Au, Pt, Pd, Ti, W, and Cu, essential for creating high-quality ohmic contacts and complex electrode patterns on diamond surfaces.
High-Quality Surface PreparationPolishing Services (Ra < 1nm for SCD)Achieving atomically flat surfaces is critical for integrating electronic devices. Our ultra-smooth polishing ensures minimal surface defects that could interfere with the bulk electronic properties validated by AFQMC.

The convergence of high-accuracy quantum simulation methods, as demonstrated in this paper, is vital for the future of diamond engineering. 6CCVD’s in-house PhD team specializes in translating complex computational results regarding Carbon Electronic Structure and Defect Properties into precise material specifications and growth recipes. We offer global shipping (DDU default, DDP available) to ensure rapid delivery of custom materials worldwide.

For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly.

View Original Abstract

We outline how auxiliary-field quantum Monte Carlo (AFQMC) can leverage graphical processing units (GPUs) to accelerate the simulation of solid state systems. By exploiting conservation of crystal momentum in the one- and two-electron integrals, we show how to efficiently formulate the algorithm to best utilize current GPU architectures. We provide a detailed description of different optimization strategies and profile our implementation relative to standard approaches, demonstrating a factor of 40 speedup over a CPU implementation. With this increase in computational power, we demonstrate the ability of AFQMC to systematically converge solid state calculations with respect to basis set and system size by computing the cohesive energy of carbon in the diamond structure to within 0.02 eV of the experimental result.