Structural, Raman and photoluminescence studies on nanocrystalline diamond films - Effects of ammonia in feedstock
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2020-04-17 |
| Journal | Diamond and Related Materials |
| Authors | K. Ganesan, P.K. Ajikumar, S.K. Srivastava, P. Magudapathy |
| Institutions | Indira Gandhi Centre for Atomic Research |
| Citations | 20 |
| Analysis | Full AI Review Included |
Technical Documentation & Analysis: Optimized N-Doped Nanocrystalline Diamond for Optical Sensing
Section titled âTechnical Documentation & Analysis: Optimized N-Doped Nanocrystalline Diamond for Optical SensingâExecutive Summary
Section titled âExecutive SummaryâThis research successfully demonstrates the optimization of nitrogen doping in Nanocrystalline Diamond (NCD) films to enhance structural quality and photoluminescence (PL) emission, directly supporting applications in radiation detection.
- Optimal Doping Identified: The highest structural quality (largest crystallite size, lowest XRD FWHM) and maximum PL enhancement were achieved at an optimal feedstock N/C ratio of 0.35.
- Structural Quality Control: Addition of NH3 significantly reduced the amorphous carbon background observed in undoped films, improving overall material quality.
- Compressive Strain Management: Raman analysis confirmed that N-doped NCD films exhibit compressive strain, which increases monotonically up to an N/C ratio of 0.50.
- Defect Engineering: A unique Raman mode at 1195 cm-1 confirms significant nitrogen incorporation via C=N-H bonding, crucial for defect formation.
- Enhanced Optical Emission: Optimal doping drastically increased room temperature PL intensity at two key wavelengths: ~505 nm (attributed to H3 centers, N-V-N) and ~700 nm (attributed to N-aggregate defects).
- Target Application: The resulting N-doped NCD films, combining enhanced PL with diamondâs inherent radiation hardness, are highly suitable for luminescence-based radiation detectors operating in extreme environments.
Technical Specifications
Section titled âTechnical Specificationsâ| Parameter | Value | Unit | Context |
|---|---|---|---|
| Synthesis Method | HFCVD | N/A | Hot Filament Chemical Vapor Deposition |
| Substrate Material | Si (111) | N/A | Chemo-mechanically polished prior to growth |
| Substrate Temperature | 800 | °C | Constant temperature maintained during synthesis |
| Operating Pressure | 30 | mbar | Fixed process parameter |
| Optimal N/C Ratio (Feedstock) | 0.35 | N/C ratio | Yielded optimal structural quality (N35 sample) |
| Maximum Crystallite Size | 16.3 | nm | Achieved at N/C = 0.35 |
| Film Thickness Range | 1.1 - 2.7 | ”m | Measured by SEM |
| Characteristic Raman Mode | 1195 | cm-1 | Corresponds to C=N-H vibrations |
| Optimal PL Emission (UV Excitation) | ~505 | nm | H3 color center (N-V-N), 355 nm laser excitation |
| Optimal PL Emission (Visible Excitation) | ~700 | nm | N-aggregate defects, 532 nm laser excitation |
| Compressive Strain Trend | Monotonic Increase | N/C ratio | Observed up to N/C ratio of 0.50 |
Key Methodologies
Section titled âKey MethodologiesâThe nanocrystalline diamond films were synthesized using a custom Hot Filament Chemical Vapor Deposition (HFCVD) system under controlled conditions:
- Substrate Preparation: Si (111) wafers were prepared by chemo-mechanical polishing using micron-level diamond paste.
- Gas Feedstock: Undoped and N-doped NCD films were grown using mixtures of CH4, H2, and NH3. The nominal N/C ratio in the feedstock was systematically varied (0, 0.13, 0.35, 0.50, and 0.75).
- Process Environment: The operating pressure was maintained constant at 30 mbar.
- Thermal Control: Substrate temperature was held constant at 800 °C using an additional resistive heater.
- Growth Duration: All growth experiments were conducted for a fixed duration of 6 hours to ensure consistency and avoid instrumental parameter variation.
- Characterization: Films were analyzed using X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and micro-Raman/Photoluminescence (PL) spectroscopy utilizing 355 nm (UV) and 532 nm (visible) diode lasers.
6CCVD Solutions & Capabilities
Section titled â6CCVD Solutions & CapabilitiesâThe research demonstrates the critical role of precise nitrogen doping in Nanocrystalline Diamond (NCD) for advanced optical applications, specifically luminescence-based radiation detection. 6CCVD specializes in providing high-quality, custom-engineered diamond materials via Microwave Plasma CVD (MPCVD), offering superior purity and scalability compared to the HFCVD method used in this study.
Applicable Materials
Section titled âApplicable MaterialsâTo replicate or extend this research, 6CCVD recommends the following materials, optimized for controlled defect incorporation and high optical performance:
- Optical Grade Polycrystalline Diamond (PCD): Ideal for NCD/UNCD applications requiring large area coverage (up to 125mm wafers) with controlled grain boundaries and high sp2 content management.
- Nitrogen-Doped PCD: We offer precise nitrogen incorporation during MPCVD growth to stabilize specific color centers (like the H3 center, N-V-N) necessary for the enhanced PL emission observed at 505 nm and 700 nm.
Customization Potential
Section titled âCustomization Potentialâ6CCVDâs advanced MPCVD platform and post-processing capabilities directly address the specific requirements of NCD film development:
| Research Requirement | 6CCVD Customization Capability | Benefit to Client |
|---|---|---|
| Thickness Control (1.1 - 2.7 ”m films) | Custom PCD thickness from 0.1 ”m to 500 ”m. | Allows engineers to specify exact film depth for optimal X-ray penetration and detector efficiency. |
| Large Area Substrates (Scalability) | PCD plates/wafers up to 125 mm diameter. | Enables scalable production of large-area radiation detectors, moving beyond lab-scale HFCVD samples. |
| Surface Finish (Optical Coupling) | Polishing services achieving Ra < 5 nm on inch-size PCD. | Minimizes surface scattering and absorption, crucial for maximizing PL signal collection in optical sensors. |
| Defect Engineering (N-V-N, H3 Centers) | Precise gas flow control in MPCVD for controlled N-doping profiles. | Ensures reproducible creation of specific N-related color centers, guaranteeing consistent optical output (PL intensity and wavelength). |
| Substrate Compatibility | Ability to grow on various substrates (Si, Mo, etc.) or provide free-standing diamond. | Offers flexibility for integration into complex device architectures, including MEMS or high-power electronics. |
Engineering Support
Section titled âEngineering SupportâThe successful development of luminescence-based radiation detectors requires precise control over defect chemistry and structural quality. 6CCVDâs in-house PhD team specializes in:
- Dopant Optimization: Assisting researchers in translating HFCVD N/C ratios to optimized MPCVD recipes for superior material purity and defect concentration control.
- Optical Characterization: Providing consultation on material selection to maximize specific color center yields (e.g., H3, NV-, SiV-) for targeted emission wavelengths (380-700 nm range).
- Radiation Hardness Design: Supporting the design of diamond components for extreme environments, leveraging the inherent radiation hardness of our SCD and PCD materials.
For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly. Global shipping (DDU default, DDP available) ensures rapid delivery of your custom diamond solutions.
Tech Support
Section titled âTech SupportâOriginal Source
Section titled âOriginal SourceâReferences
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- 2001 - Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films [Crossref]
- 2014 - High quantum efficiency ultrananocrystalline diamond photocathode for photoinjector applications [Crossref]
- 2019 - Conductive diamond: synthesis, properties, and electrochemical applications [Crossref]