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A Phononic Bus for Coherent Interfaces Between a Superconducting Quantum Processor, Spin Memory, and Photonic Quantum Networks

MetadataDetails
Publication Date2020-03-18
JournalarXiv (Cornell University)
AuthorsTomas Neuman, Matt Eichenfield, Matthew E. Trusheim, Lisa Hackett, Prineha Narang
Citations4
AnalysisFull AI Review Included

6CCVD Technical Documentation: Hybrid Quantum Transduction via Phononic Diamond Systems

Section titled “6CCVD Technical Documentation: Hybrid Quantum Transduction via Phononic Diamond Systems”

Reference Paper: A Phononic Bus for Coherent Interfaces Between a Superconducting Quantum Processor, Spin Memory, and Photonic Quantum Networks

This technical documentation analyzes the requirements and achievements of the referenced research, focusing specifically on the demand for advanced MPCVD diamond materials necessary to realize high-fidelity, scalable hybrid quantum architectures.


This research establishes a theoretical and design framework for achieving high-fidelity quantum state transduction between disparate physical platforms—specifically, Superconducting (SC) qubits and Silicon Vacancy ($\text{SiV}^-$) solid-state artificial atoms—using a diamond-based phononic bus.

  • Core Achievement: Numerical modeling estimates quantum state transduction fidelity exceeding $99%$ at a MHz-scale bandwidth, validating a critical requirement for fault-tolerant quantum systems.
  • Architecture: A hybrid system employing an acoustic bus (phononic cavity/waveguide) couples the microwave domain (SC Qubit) via piezoelectric transduction and the optical/spin domain ($\text{SiV}^-$ in diamond) via strong strain-spin coupling.
  • Scalability & Memory: The architecture provides long-lived quantum memory capacity via coupling the $\text{SiV}^-$ electron spin to neighboring $\text{C}^{13}$ nuclear spins, potentially offering thousands of memory qubits.
  • Key Material Requirement: High-purity, low-loss, custom-dimensioned Single Crystal Diamond (SCD) is essential for hosting the $\text{SiV}^-$ centers and supporting the high-Q mechanical and optical cavities.
  • Cavity Design: Two high-Q mechanical cavities were modeled: a heterogeneous silicon/thin diamond (100 nm) structure (2.0 GHz) and an all-diamond optomechanical structure (17.2 GHz).
  • Engineering Challenge: Requires the demonstration of strong coupling of a single defect center spin to a high-quality mechanical cavity, demanding ultra-precise diamond fabrication and surface quality.

The following key operational and material parameters were extracted from the theoretical modeling and analysis:

ParameterValueUnitContext
Target State Transfer Fidelity ($\mathcal{F}$)> 99%Required for efficient transduction
Transduction BandwidthMHz-scaleHzOperational speed requirement
Operating Temperature$\sim$ mKKRequired for non-thermal occupation of modes
Target Mechanical Quality Factor ($Q_p$)$\sim 10^7$unitlessRequired to limit phonon decay rate ($\gamma_p \le 10^{-7}$ GHz)
SCD Layer Thickness (Heterogeneous Design)100nm (0.1 ”m)Thin diamond layer integrated onto silicon
SC Qubit Decay Rate ($\gamma_{sc}/2\pi$)$\le 10^{-5}$GHz (10 kHz)Conservative requirement for microsecond coherence
Electron Spin Decoherence Rate ($\gamma_e/2\pi$)$\le 10^{-5}$GHz (10 kHz)Max limit for achieving > 99% fidelity
All-Diamond Cavity Resonant Frequency ($\omega_p/2\pi$)17.2GHzHigh-frequency mechanical mode analyzed
Maximum Bare Phonon-Spin Coupling ($g_{orb}/2\pi$)24MHzAchieved in all-diamond optomechanical cavity (Fig. 3)
Optical Wavelength ($\lambda_{opt}$)732nmSiV$^-$ optical addressing requirement
All-Diamond Optical Quality Factor ($Q_{opt}$)$10^6$unitlessCalculated value for high efficiency optical addressing

The experimental feasibility hinges on combining precise material engineering with carefully controlled physical processes:

  1. High-Purity Diamond Synthesis: Use of Single Crystal Diamond (SCD) grown via MPCVD to minimize intrinsic defects and achieve sufficiently long coherence times ($T_2$) for the $\text{SiV}^-$ electron and nuclear spins.
  2. Cavity Fabrication (Silicon/Diamond): Creation of phononic crystal lattices and waveguides in silicon or all-diamond structures, designed to concentrate elastic energy density in a thin constriction where the $\text{SiV}^-$ centers reside.
  3. Strain Concentration: Engineering geometric distortions and thin diamond layers (as low as 100 nm) to achieve zero-point strain fluctuations on the order of $10^{-9}$ to $10^{-8}$ to facilitate strong spin-strain coupling ($g_{orb}$).
  4. Cryogenic Operation: Maintaining the system at millikelvin ($\sim$ mK) temperatures to ensure the superconducting qubit performs optimally and to avoid thermal occupation of mechanical modes.
  5. Coupling Modulation: Implementation of rapidly tunable couplings ($g_{sc-p}(t)$ and $g_{p-e}(t)$) via external magnetic fields, piezoelectric transducers, or optical/microwave drives.
  6. Pulsed State Transfer: Application of time-symmetric “pitch-and-catch” pulse sequences to execute rapid, coherent Jaynes-Cummings SWAP gates, moving the quantum state sequentially from the SC qubit to the phonon mode and finally to the electron spin ($\text{SiV}^-$).

6CCVD is an essential, high-precision supplier for the realization and scaling of this hybrid quantum transduction architecture. Our core expertise in MPCVD diamond growth, custom fabrication, and metalization directly addresses the key material challenges identified in this research.

To replicate or extend this research, high-quality CVD diamond wafers are required.

  • Optical Grade Single Crystal Diamond (SCD): Required for the lowest possible background nitrogen concentration and highest material purity, which is critical for achieving the long spin coherence times ($T_2$ processes $\le 10 \text{ kHz}$) necessary for the $\text{SiV}^-$ centers and the $\text{C}^{13}$ nuclear-spin quantum memory.
    • Application: SCD substrates are the host for $\text{SiV}^-$ creation, nanostructure etching (phononic/optical cavities), and subsequent integration.
  • Custom Thickness SCD: The research specifically utilizes thin diamond layers (100 nm or 0.1 ”m) for heterogeneous integration and the concentration of elastic energy.
    • 6CCVD Capability: We supply SCD films with thickness control down to 0.1 ”m on custom substrates, meeting the precise thickness requirements for strain-concentrating nanomechanical structures.

The complex architecture, which includes phononic crystal waveguides, cavities, and electrical interfaces, necessitates advanced customization capabilities.

Requirement (Paper)6CCVD Customization PotentialSpecification Guarantee
Thin Film/MembranesCustom thickness SCD wafers (ready for etching into cavities)Thickness control down to 0.1 ”m (SCD/PCD)
Ultra-Smooth SurfacesPolishing required for high mechanical/optical Q-factorsSCD Polishing: Ra < 1 nm (Atomic flatness)
Complex GeometriesCustom cutting and shaping for integrated devices (Fig. 2, Fig. 3)Laser micro-machining and custom dimensions (up to 125mm PCD)
Electrical InterfacesMetalization for piezoelectric transducers and electrical contactsInternal Metalization capabilities: Ti, Pt, Au, Pd, W, Cu
Substrate SizeNeed for scalable, inch-sized platforms for QPU/QM integrationWafers supplied up to 125mm diameter (PCD/BDD)

The successful fabrication of the high-Q phononic cavities and the integration of the $\text{SiV}^-$ centers within the zero-point strain field is an advanced technical hurdle. 6CCVD’s in-house team of PhD material scientists can assist with:

  • Material Selection: Determining the optimal SCD grade (purity, isotopic composition) to maximize $\text{SiV}^-$ and $\text{C}^{13}$ spin coherence times ($T_2$).
  • Interface Optimization: Consulting on the handling and surface preparation of thin SCD membranes required for high-fidelity heterogeneous integration onto silicon platforms.
  • Fabrication Workflow: Assisting engineering teams in optimizing pre- and post-processing steps (polishing, cleaning) to preserve the ultra-low $\text{Ra}$ values critical for achieving high mechanical $Q$ in the fabricated cavities.

For custom specifications or material consultation, visit 6ccvd.com or contact our engineering team directly. We provide global shipping (DDU default, DDP available) for expedited delivery of critical quantum-grade diamond substrates.

View Original Abstract

We introduce a method for high-fidelity quantum state transduction between a superconducting microwave qubit and the ground state spin system of a solid-state artificial atom, mediated via an acoustic bus connected by piezoelectric transducers. Applied to present-day experimental parameters for superconducting circuit qubits and diamond silicon vacancy centers in an optimized phononic cavity, we estimate quantum state transduction with fidelity exceeding 99% at a MHz-scale bandwidth. By combining the complementary strengths of superconducting circuit quantum computing and artificial atoms, the hybrid architecture provides high-fidelity qubit gates with long-lived quantum memory, high-fidelity measurement, large qubit number, reconfigurable qubit connectivity, and high-fidelity state and gate teleportation through optical quantum networks.